High-tenacity oxidation-resistant anti-friction coating on substrate surface and preparation method thereof
A high-toughness, anti-oxidation technology, applied in coatings, metal material coating processes, ion implantation plating, etc., can solve problems such as low high temperature oxidation resistance and built-up edge
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Embodiment 1
[0023] The tungsten carbide blade and the Si wafer substrate were mechanically polished, then ultrasonically cleaned with acetone, dried, and placed in the chamber of the self-developed P600 type FCVA cathodic arc sputtering hybrid deposition equipment, and pre-evacuated to 2×10 -3 Pa. Among them, FCVA is the abbreviation of English Filtered cathodic vacuum arc, and the Chinese name is magnetic filter cathodic vacuum arc.
[0024] (1) Pass argon gas into the coating chamber through the ion source of the cathode layer to maintain the pressure of the argon gas at 0.1Pa, apply a pulse bias voltage of -500V on the substrate, turn on the ion source of the cathode layer, and use the ionization Argon ions etch the surface of the substrate, and this process lasts for 30 minutes;
[0025] (2) Feed nitrogen and argon into the coating cavity through the ion source of the cathode layer, keep the partial pressure of argon at 0.1Pa, the partial pressure of nitrogen at 2Pa, control the temp...
Embodiment 2
[0029] The high-speed steel rotor and the Si wafer substrate were mechanically polished, then ultrasonically cleaned with acetone, dried, and placed in the cavity of the self-developed P600 type FCVA cathodic arc sputtering hybrid deposition equipment, and pre-evacuated to 2×10 -3 Pa.
[0030] (1) Pass argon gas into the coating cavity through the ion source of the cathode layer to maintain the pressure of the argon gas at 0.1Pa, apply a pulse bias voltage of -500V on the substrate, turn on the ion source of the cathode layer, and use the ionization Argon ions etch the surface of the substrate, and this process lasts for 20 minutes;
[0031] (2) Introduce nitrogen and argon into the coating chamber through the ion source of the cathode layer, keep the partial pressure of argon at 0.1Pa, the partial pressure of nitrogen at 2Pa, control the temperature in the chamber at 450°C, and the Ti target arc flow of the cathode arc as 70A, the substrate pulse bias voltage is -150V, and t...
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