Preparation method of silicon-based dielectric film

A dielectric film and silicon-based technology, applied in the field of SiN thin film preparation, can solve the problems of the Ag gate line of the battery being difficult to penetrate, the cost is high, and it is not suitable for the anti-reflection layer of the battery structure, so as to solve the problem of decreased battery efficiency and consistent interface. good effect

Inactive Publication Date: 2011-06-01
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

X.B.Yan also used electrochemical methods to prepare SiCN films in "Synthesis of silicon carbide nitride nanocomposite films by a simple electrochemical method" (Electrochemistry Communications 8 (2006) 737-740), the composition of which is mainly a mixture of amorphous SiN and SiC Although the thermal conductivity of SiC is very high, due to the hard texture of SiC, the Ag grid lines of the battery are not easy to penetrate, and special processes such as laser etching are requir

Method used

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  • Preparation method of silicon-based dielectric film

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Embodiment 1

[0038] 1. Prepare N-type silicon wafers, go through the texturing process, wash with ultra-pure water and dry them;

[0039] 2. Screen-print Al paste on the silicon wafer prepared in step 1, and then sinter in a sintering furnace with a peak sintering temperature of 820°C for 8s;

[0040] 3. Cut the silicon chip obtained in step 2 into several small pieces, put into a hydrochloric acid solution with a mass concentration of 37% and boil for 5 minutes to remove the Al layer and the Al-Si alloy layer of the silicon chip; then take out the silicon chip, and use Cleaning with ultrapure water and drying to obtain an Al-doped P+ layer, that is, an effective doped layer;

[0041] 4. Etch the silicon wafer prepared in step 3 in a potassium hydroxide solution with a mass concentration of 12% and a temperature of 55°C for 3 minutes to clean the surface traces of the silicon wafer to obtain an Al-doped P+ inner layer, that is, an effective doped layer inner layer;

[0042] 5. Prepare hy...

Embodiment 2

[0046] 1. Prepare P-type silicon wafers, wash and dry them according to standard RCA cleaning steps;

[0047] 2. Screen-print Al paste on the silicon wafer prepared in step 1, and then sinter in a sintering furnace. The sintering peak temperature is 1050°C and the time is 2s;

[0048] 3. Cut the silicon chip obtained in step 2 into several small pieces, put it into 10% phosphoric acid solution and react at room temperature for 10 minutes, remove the Al layer and the Al-Si alloy layer of the silicon chip; then take out the silicon chip, and use ultra-pure Wash with water and dry to obtain the P+ layer (effectively doped layer) doped with Al;

[0049] 4. Prepare hydrazine: ammonia gas: propylene glycol in a weight ratio of 1:4:20, and use it as a conductive solution for the anode nitriding process. Wherein the propylene glycol of 20 unit weights is extraction agent, and hydrazine is solvent;

[0050] 5. Place the silicon wafer prepared in step 3 on the anode end of the electro...

Embodiment 3

[0053] 1. Prepare N-type silicon wafers, go through the texturing process, wash with ultra-pure water and dry, and use PECVD to prepare a layer of silicon nitride film;

[0054] 2. Screen-print Al slurry that can ablate silicon nitride on the silicon wafer prepared in step 1, and then sinter the silicon wafer in a sintering furnace with a peak temperature of 600°C for 2 minutes;

[0055] 3, cut the silicon chip that step 2 makes into several small pieces, put into the hydrochloric acid solution of mass fraction 10%, boil 30min, remove the Al layer and Al-Si alloy layer of described silicon chip; Take out silicon chip then, use super Washing with pure water, blowing dry, obtain the P+ layer doped with Al, namely effective doping layer);

[0056] 4. Etch the silicon wafer prepared in step 3 in a potassium hydroxide solution with a mass concentration of 15% and a temperature of 55°C for 20 seconds to clean the surface traces of the silicon wafer to obtain an Al-doped P+ inner lay...

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Abstract

The invention provides a preparation method of a silicon-based dielectric film used for a photovoltaic cell. The preparation method is characterized by comprising the following steps: firstly, doping a silicon-based substrate (100) with III group elements or metal elements; then, preparing an SiN film (104) containing III group nitrides or metal nitrides by adopting an anode nitridation method; and then, carrying out annealing treatment, thus obtaining the needed film. The silicon-based dielectric film prepared by the method can be used as the anti-reflection passivating film or back reflection passivating film of the photovoltaic cell.

Description

technical field [0001] The invention relates to a method for preparing a silicon-based dielectric film, in particular to a method for preparing a SiN thin film containing Group III nitrides or metal nitrides. Background technique [0002] In the field of photovoltaic cells, TiO 2 、Si 3 N 4 , SiO 2 , SiCx, etc. are the preferred solutions for the anti-reflection film of crystalline silicon cells, among which, TiO 2 The refractive index is 2.4, and the defect of the film itself is very small. It is an anti-reflection film with excellent performance. However, the study found that this film basically has no passivation properties, and cannot passivate the dangling bonds on the light-receiving surface. Si 3 N 4 The refractive index of the film changes due to the change of the Si / N ratio. It can not only achieve the anti-reflection effect, but also is favored because of its field passivation effect and H passivation effect. It has been widely used in the industrial chain, b...

Claims

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Application Information

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IPC IPC(8): C25D11/00H01L31/18
CPCY02P70/50
Inventor 张俊王文静周春兰
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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