Passive mode-locking laser based on graphite alkene having epitaxial growth on SiC substrate

A technology of epitaxial growth and passive mode-locking, which is applied in the field of laser technology and nonlinear optics, can solve the problems of complicated SESAM manufacturing process, narrow saturable absorption spectrum range, and unobvious saturable absorption effect, and achieve good thermal conductivity and Operability, large pulse energy, highly repeatable effect

Inactive Publication Date: 2011-10-05
ZHEJIANG IRIS LASER EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SESAM has the disadvantages of complex manufacturing process, high production cost, and relatively narrow range of saturable absorption spectrum.
Compared with SESAM, SWNT has the advantages of low cost and wide saturable absorption spectrum range, but the uncontrollable diameter of SWNT saturable absorber leads to increased insertion loss of SWNT for certain specific laser wavelengths. , leading to problems such as the insignificant saturable absorption effect

Method used

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  • Passive mode-locking laser based on graphite alkene having epitaxial growth on SiC substrate
  • Passive mode-locking laser based on graphite alkene having epitaxial growth on SiC substrate
  • Passive mode-locking laser based on graphite alkene having epitaxial growth on SiC substrate

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Experimental program
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Effect test

Embodiment 1

[0031] A graphene passive mode-locked laser structure based on SiC substrate epitaxial growth such as figure 1 shown. The pump source 1 with a central wavelength of 974nm is connected to the pump input end of the wavelength division multiplexer 2; the common end of the wavelength division multiplexer 2 is connected to a 1m long ytterbium-doped single-clad fiber 3; the other end of the ytterbium-doped fiber 3 Connect the laser beam splitter 4 with a splitting ratio of 20:80; the laser beam splitter 4 divides the light into two beams, 20% of the light is output from the output port of the beam splitter 4, and the other 80% of the light reaches the circulator 6 Port 1; since the light can only pass through the three ports of the circulator 6 sequentially in one direction, the light enters from the port 1 of the circulator 6, and the light coming out from the port 2 of the circulator 6 reaches the SiC substrate 7 after passing through the graphene 8, Since the SiC substrate 7 has...

Embodiment 2

[0033] A graphene passive mode-locked laser structure based on SiC substrate epitaxial growth such as figure 2 shown. The pump source 1 with a central wavelength of 974nm is connected to the pump input end of the wavelength division multiplexer 2; the common end of the wavelength division multiplexer 2 is connected to a 1m long ytterbium-doped single-clad fiber 3; the other end of the ytterbium-doped fiber 3 Connecting the terminal 1 of the circulator 6, since the light can only pass through the three ports of the circulator 6 sequentially in one direction, the light enters through the port 1 of the circulator 6, and the light coming out of the port 2 of the circulator 6 arrives after passing through the graphene 8 SiC substrate 7, because SiC substrate 7 has a certain reflection to laser light, so part of the light is output from SiC substrate 7, and another part of light is reflected by SiC substrate 7 and then passes through port 2 of circulator 6 to reach the end of circu...

Embodiment 3

[0035] A graphene passive mode-locked laser structure based on SiC substrate epitaxial growth such as image 3 shown. The pump source 1 with a center wavelength of 974nm is connected to the pump input end of the wavelength division multiplexer 2; the common end of the wavelength division multiplexer 2 is connected to one end of the polarization controller 9; and the other end of the polarization controller 9 is connected to a 3m long The erbium-doped fiber 3; the other end of the erbium-doped fiber 3 is connected to the graphene 8 grown on the SiC substrate 7. The other end of the wavelength division multiplexer 2 is connected to a fiber Bragg grating 10 with a reflectivity of 99%; the SiC substrate 7 has a certain reflection of laser light, so a resonant cavity is formed between the SiC substrate 7 and the fiber Bragg grating 10, and the SiC substrate 7 is used as a laser output mirror to realize mode-locked pulse laser output.

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Abstract

The invention relates to a passive mode-locking laser based on graphite alkene having an epitaxial growth on a SiC substrate and is directed to the fields of laser technology and nonlinear optics. The passive mode-locking laser mainly comprises a SiC substrate, graphite alkene having an epitaxial growth on the SiC substrate, a doped fiber, a gain medium, a pumped source, a wavelength division multiplexing device, a laser beam splitter, a single-mode fiber, an annular device, a polarization controller and the like. A mode-locking laser output having high stability and high impulse energy is realized through utilizing the characteristic of saturable absorption of graphite alkene. Graphite alkene having an epitaxial growth on the SiC substrate is characterized by high repeatability, good thermal conductivity and strong operationality. Therefore, graphite alkene having an epitaxial growth on the SiC substrate is easier to be applied into the passive mode-locking laser at a low cost and a large scale.

Description

technical field [0001] The invention relates to the use of epitaxially grown graphene on a SiC substrate as a saturable absorber for passive mode locking of a laser, and belongs to the field of laser technology and nonlinear optics. Background technique [0002] Compared with other types of lasers, fiber lasers have the advantages of high efficiency, small size, and good beam quality, and can be widely used in optical fiber communication, material processing and other fields. In particular, passive mode-locked pulsed fiber lasers with high average power and high repetition rate have incomparable advantages in precision laser micromachining and other fields. Usually, technologies for realizing passive mode locking include semiconductor saturable absorber mirror (SESAM), carbon nanotube (SWNT) and other technologies. However, SESAM has disadvantages such as complex manufacturing process, high production cost, and relatively narrow saturable absorption spectrum range. Compare...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/098H01S3/08H01S3/067H01S3/16
Inventor 王璞刘江
Owner ZHEJIANG IRIS LASER EQUIP CO LTD
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