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Method for improving resistive storage performance of strontium titanate stannate thin film

A technology of resistive variable storage and strontium stannate, which is applied in the direction of electrical components, can solve problems such as no theoretical explanation, and achieve the effects of improving the performance of resistive variable storage, good lithography, and easy to distinguish

Inactive Publication Date: 2013-07-17
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Among these new non-volatile memories, the storage mechanism of FeRAM, MRAM and PRAM has been thoroughly studied, but there are still great differences in the understanding of the resistance change mechanism of resistive memory. In further improvement, Table 1 lists the performance comparison of various memories that have been reported

Method used

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  • Method for improving resistive storage performance of strontium titanate stannate thin film
  • Method for improving resistive storage performance of strontium titanate stannate thin film
  • Method for improving resistive storage performance of strontium titanate stannate thin film

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preparation example Construction

[0042] The chemical raw material used in the preparation of the precursor solution is strontium acetate [Sr(CH 3 COO) 2 ], tin acetate [Sn(CH 3 COO) 4 ] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], magnesium acetate [Mg(CH 3 COO) 2 ] and manganese acetate [Mn(CH 3 COO) 2 ]; The solvent is glacial acetic acid and ethylene glycol ether. First weigh strontium acetate, tin acetate, magnesium acetate and manganese acetate according to the corresponding stoichiometric ratio (magnesium acetate can be weighed by stoichiometric ratio or non-stoichiometric ratio) and dissolved in glacial acetic acid solution and heated to boiling, 10 Stop heating after 1 minute, and cool to room temperature; wherein, the molar ratio of the total amount of elements Sr and Sn to glacial acetic acid is 1:10. Add the mixed solution of titanium isopropoxide, ethylene glycol ethyl ether and acetylacetone (AcAc) into the glacial acetic acid solution containing strontium and tin, wherein: the molar r...

Embodiment 1

[0046] Preparation of Mg and Mn-doped SrTi for resistive variable memory with x=0.05, y=2, z=1 0.95 sn 0.05 o 3 thin film (SrTi 0.95 sn 0.05 o 3 +2%Mg+1%Mn): Take the precursor solution of strontium titanium stannate with a molar concentration of 0.1M aged for 24 hours, and place it on the substrate LaNiO 3 / Pt / Ti / SiO 2 / Si coated with one layer, the gel film is slowly pushed from room temperature into a tubular gradient furnace at 500°C, placed for 15 minutes for heat treatment, and this process is repeated until the film reaches the required thickness of 40-80 nm. Finally, the film was heat-treated at 700°C for 0.5 hours. Then on its upper surface adopt the method of DC magnetron reactive sputtering to sputter the upper titanium nitride electrode as the top electrode, its diameter is 0.2mm, the thickness is about 70nm, forms the bottom electrode / (SrTi 0.95 sn 0.05 o 3 +2%Mg+1%Mn) film / top electrode plate capacitor structure to test the resistance change performance ...

Embodiment 2

[0051] Preparation of Mg and Mn-doped SrTi for resistive memory with x=0.01, y=1, z=0.1 0.99 sn 0.01 o 3 thin film (SrTi 0.99 sn 0.01 o 3 +1%Mg+0.1%Mn): Take the precursor solution of strontium titanate stannate with a molar concentration of 0.05M aged for 24 hours, and place it on the substrate LaNiO 3 / Pt / Ti / SiO 2 / Si coated with one layer, the gel film is slowly pushed from room temperature into a tubular gradient furnace at 500°C, placed for 15 minutes for heat treatment, and this process is repeated until the film reaches the required thickness of 40-80 nm. Finally, the film was heat-treated at 650°C for 1 hour. Then on its upper surface adopt the method of DC magnetron reactive sputtering to sputter the upper titanium nitride electrode as the top electrode, its diameter is 0.2mm, the thickness is about 70nm, forms the bottom electrode / (SrTi 0.99 sn 0.01 o 3 +1%Mg+0.1%Mn) film / top electrode plate capacitor structure to test the resistance change performance of th...

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Abstract

The invention provides a method for improving the resistive storage performance of a strontium titanate stannate thin film. The method comprises the following step of: doping Mg and Mn into a strontium titanate stannate thin film material, wherein the Mg content of the strontium titanate stannate thin film material is 0.1 to 4 percent, and the Mn content of the strontium titanate stannate thin film material is 0.1 to 4 percent; and the chemical formula of the strontium titanate stannate thin film material is SrTi(1-x)SnxO3, and x is more than or equal to 0.01 and less than or equal to 0.25. In the method, the chemical element magnesium is doped in the preparation of the strontium titanate stannate thin film and supplemented by other acceptors or valence variable impurities such as manganese to improve the microstructure and physical properties of the strontium titanate stannate thin film, thereby increasing the high / low resistance state shear rate of the strontium titanate stannate thin film used as a resistive random access memory, making the resistive random access memory taking the strontium titanate stannate thin film as a dielectric layer easier to distinguish when read in a high resistance state and a low resistance state and further greatly improving the read / write operation reliability and information storage long-term performance of the resistive random access memory.

Description

technical field [0001] The invention relates to a method for improving the performance of strontium titanium stannate thin film resistive memory, in particular to a method of doping chemical elements to improve the high / low resistance switching of titanium strontium stannate thin film when used in resistive memory. method of changing ratios. Background technique [0002] As portable consumer electronics are used more and more widely, the demand for large-capacity non-volatile memory is becoming more and more urgent. Traditional Erasable Programmable Read-Only Memory (EPROM) and Electrically Erasable Programmable Read-Only Memory (E2PROM) are far from being able to meet today's market demands, and flash memory (flash) based on floating gate structure is also due to high The operating voltage and complex circuit structure have been criticized by the industry, so various new next-generation non-volatile memories have emerged, such as ferroelectric memory (FeRAM), magnetic memo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 翟继卫周歧刚
Owner TONGJI UNIV