H3PO4 corrosive seed crystal for growing GaN (Gallium Nitride) single crystal by using HVPE (Hydride Vapor Phase Epitaxial) and preparation method thereof
A technology of H3PO4 and seed crystal, which is applied in the field of phosphoric acid corrosion seed crystal and its preparation, can solve the problems of complicated photolithography process and preparation technology, unsuitable for batch growth, and high growth temperature, and achieve simple process, improved crystal quality, and high growth temperature. low effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0034] A kind of H used in HVPE growth GaN single crystal 3 PO 4 Corrosion seeds, the structure of which is figure 1 As shown in (b), a GaN epitaxial film layer 2 is grown on the sapphire substrate 1, and there is H on the GaN epitaxial film layer 2. 3 PO 4 Corrosion pit 5, 6, 7, 8, 9, H 3 PO 4 The substrate 1 is exposed in the deepest part of the corrosion pit, such as figure 1 (b) Corrosion pit 6 and corrosion pit 8 in middle.
[0035] A kind of HVPE growth GaN single crystal with H 3 PO 4 The preparation method of corrosion seed crystal comprises the following steps:
[0036] (1) Utilize metal-organic chemical vapor deposition (MOCVD) to epitaxially grow a GaN epitaxial thin film layer with a thickness of 6 μm on a sapphire substrate 1 to obtain a GaN epitaxial wafer, see figure 1 Figure (a) in;
[0037] (2) Immerse the GaN epitaxial wafer grown by MOCVD above at a temperature of 240°C and a concentration of 85wt% H 3 PO 4 Etched in the solution for 10min, the e...
Embodiment 2
[0043] As described in Example 1, the difference is:
[0044] In step (1), a GaN epitaxial film layer 2 with a thickness of 7 μm is epitaxially grown on the sapphire substrate 1 by metal organic chemical vapor deposition (MOCVD) to obtain a GaN epitaxial wafer;
[0045] In step (2), immerse the GaN epitaxial wafer grown by MOCVD above at a temperature of 220°C and at a concentration of 90wt% H 3 PO 4 Corroded in the solution for 15min, the H 3 PO 4 Seeds for etch pit structure, maximum H 3 PO 4 The diameter of the corrosion pit is about 10 μm, and the deepest H 3 PO 4 The GaN epitaxial thin film layer 2 in the etch pit is etched through, exposing the substrate 1 .
Embodiment 3
[0047] As described in Example 1, the difference is:
[0048] In step (2), immerse the GaN epitaxial wafer grown by MOCVD above at a temperature of 260°C and at a concentration of 80wt% H 3 PO 4 Corroded in the solution for 8min, obtained with H 3 PO 4 Seeds for etch pit structure, maximum H 3 PO 4 The diameter of the corrosion pit is about 10 μm, and the deepest H 3 PO 4 The GaN epitaxial thin film layer 2 in the etch pit is etched through, exposing the substrate 1 .
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More