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A preparation method of nanometer tantalum carbide dispersion strengthened tungsten bulk material

A nano-tantalum carbide and dispersion-strengthening technology, which is applied in the field of preparation of nano-tantalum carbide dispersion-strengthened tungsten bulk materials, can solve the problems of small-sized tungsten bulk materials that cannot be forged, high porosity, and non-dense structure of tungsten bulk materials. , to achieve the effect of high hardness, high density and high bending strength

Inactive Publication Date: 2011-12-28
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the structure of tungsten bulk materials prepared by general powder metallurgy methods is not dense, and the porosity is relatively high after sintering, which requires forging to densify, while small-sized tungsten bulk materials cannot be forged.

Method used

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  • A preparation method of nanometer tantalum carbide dispersion strengthened tungsten bulk material
  • A preparation method of nanometer tantalum carbide dispersion strengthened tungsten bulk material
  • A preparation method of nanometer tantalum carbide dispersion strengthened tungsten bulk material

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Experimental program
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Effect test

Embodiment 1

[0032] Preparation of sintered tungsten bulk material with nanometer TaC content of 0.5%

[0033] In this embodiment, the nano-TaC powder is prepared by the liquid phase precursor method, and the preparation process of the nano-TaC is as follows: 1g of TaCl 5 React with 10mL of absolute ethanol at 50°C by ultrasonic oscillation to generate tantalum ethoxide, then add nano-carbon powder and heat-preserve and sinter at 1300°C for 30min to prepare nano-TaC powder. Put 0.2g of nano-TaC and 39.8g of tungsten powder into the ball mill jar, and then put in 200g of pure tungsten rods with a specification of φ8×10 as grinding balls. Put the ball mill pot on a horizontal ball mill for ball milling and mixing. The ball milling process is as follows: the ball milling speed is 150r / min, the ball-to-material ratio is 5:1 (mass ratio), and the ball milling time is 6 hours. Put the mixed powder into a polyvinyl chloride sheath, and carry out cold isostatic pressing molding under a pressure o...

Embodiment 2

[0037] Preparation of sintered tungsten bulk material with 1% nano-TaC content

[0038] In this embodiment, 0.4g of nano-TaC and 39.6g of tungsten powder are put into a ball mill jar, and then 200g of pure tungsten rods with a specification of φ8×10 are put in as grinding balls. Put the ball mill pot on a horizontal ball mill for ball milling and mixing. The ball milling process is as follows: the ball milling speed is 150r / min, the ball-to-material ratio is 5:1 (mass ratio), and the ball milling time is 6 hours. Put the mixed powder into a polyvinyl chloride sheath, and carry out cold isostatic pressing molding under a pressure of 250 MPa for 10 minutes. Put the shaped green body into the graphite mold, and then put the green body and the graphite mold together into the pyrophyllite sheath for ultra-high pressure electrified sintering. 2102W, sintering time is 15min.

[0039] The obtained tungsten bulk material was tested for density, hardness, flexural strength and fractur...

Embodiment 3

[0042] Preparation of sintered tungsten bulk material with 2% nanometer TaC content

[0043] In this embodiment, put 0.8g of nano-TaC and 39.2g of tungsten powder into a ball mill jar, and then put 320g of pure tungsten rods with a specification of φ8×10 as grinding balls. Put the ball mill tank on a horizontal ball mill for ball milling and mixing. The ball milling process is as follows: the ball milling speed is 150r / min, the ball-to-material ratio is 8:1 (mass ratio), and the ball milling time is 5 hours. Put the mixed powder into a polyvinyl chloride sheath, and carry out cold isostatic pressing molding under a pressure of 250 MPa for 10 minutes. Put the shaped green body into the graphite mold, and then put the green body and the graphite mold together into the pyrophyllite sheath for ultra-high pressure electrified sintering. 2102W, sintering time is 15min.

[0044]The obtained tungsten bulk material was tested for density, hardness, flexural strength and fracture SEM ...

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Abstract

The invention discloses a method for preparing a tungsten bulk material through dispersion strengthening of nanometer TaC. The preparation process mainly includes: preparing nano-TaC by liquid phase method, ball milling and mixing nano-TaC and tungsten powder; putting the mixed powder into a self-made polyvinyl chloride sheath for cold isostatic pressing; cold isostatic The pressed body is put into a graphite mold, and then the green body together with the graphite mold is put into a pyrophyllite sheath for ultra-high pressure sintering. After sintering, a block material with higher density and better mechanical properties can be obtained. The relative density of tungsten block can reach 95.23~99.48%. The high-density tungsten material prepared by the invention can be applied to plasma-facing components of fusion stacks that need to withstand high heat flow loads. At the same time, this high-density tungsten material can also be used in high-temperature fields such as aviation, aerospace, and atomic energy. Therefore, high-density tungsten bulk materials have broad application prospects.

Description

technical field [0001] The invention designs a method for preparing nanometer tantalum carbide dispersion-strengthened tungsten block material, specifically a method combining cold isostatic pressing forming and ultra-high pressure electrification sintering. In particular, the cold isostatic preforming is carried out before sintering, so that the green body has a higher molding density before sintering, and the ultra-high pressure sintering also provides a higher sintering pressure, which is conducive to the preparation of a denser High tungsten bulk material. Background technique [0002] Tungsten is a refractory metal (melting point as high as 3410°C), which has good electrical conductivity, low sputtering corrosion rate, small thermal expansion coefficient, low vapor pressure and high temperature strength. Therefore, tungsten products are widely used In the fields of aviation, aerospace, atomic energy and high temperature, such as being selected as the plasma-oriented m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05C22C32/00C22C27/04B22F3/16
Inventor 沈卫平张苹苹周亚南张庆玲李岩王拉娣王占朋赵晓琳
Owner UNIV OF SCI & TECH BEIJING