Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing diamond-graphene composite film

A graphene composite and diamond technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems that single diamond film cannot meet, and achieve environmental protection, good reliability, unique and singular performance effect

Inactive Publication Date: 2012-03-07
NANCHANG HANGKONG UNIVERSITY
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a diamond-graphene composite film, to solve the scientific problem that the single diamond film prepared by the known technology cannot meet its practical application in a specific field, and to provide a new method for the diamond-graphene composite film. The excellent comprehensive performance of the membrane is reflected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing diamond-graphene composite film
  • Method for preparing diamond-graphene composite film
  • Method for preparing diamond-graphene composite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Such as figure 1 As shown, diamond powder with a particle size of 800nm, 200nm, 50nm, and 20nm is used to impact and etch the growth surface of the substrate at a high speed of 100-500m / s on the ground Ni substrate 3 to obtain high surface energy and high Micro-nano pits on the surface of the density substrate, and then ultrasonically clean and purify the surface of the substrate for 20 minutes, then put it into the growth chamber, vacuumize and clean the growth chamber, start the DC plasma arc, and then introduce high-concentration active hydrogen atoms to the surface of the planar nickel substrate The micro-nano pits are further subjected to reactive etching, so that the substrate forms high surface energy micro-nano pits with a specific structure, forming nucleation centers, and inducing the nucleation and growth of graphene 2.

[0027] A direct current plasma jet chemical vapor deposition system is used, and then the nickel substrate is placed on a special cooling t...

Embodiment 2

[0030] As shown in Figure 2, cubic boron nitride with a particle size of 10 μm, 1 μm, 100 nm, and 10 nm is used to impact and etch the concave surface substrate 3 at a high speed of 150-450 m / s on the ground Ni substrate 3. To grow the surface, obtain micro-nano pits on the surface of the substrate with high surface energy and high density, and then perform 25 minutes of ultrasonic cleaning on the surface of the substrate 3, then put it into the growth chamber, vacuumize and clean the growth chamber with argon gas, and then start the DC plasma arc , and then introduce high-concentration active hydrogen atoms to further reactively etch the micro-nano pits on the surface of the concave curved nickel substrate, so that the substrate forms micro-nano pits with a specific structure and high surface energy, and induces the nucleation and growth of graphene 2.

[0031]A direct current plasma jet chemical vapor deposition system is used, and then the nickel substrate is placed on a spe...

Embodiment 3

[0034] Such as image 3 As shown, diamond powder with a particle size of 5 μm, 500 nm, 200 nm, and 50 nm is used to impact and etch the growth surface of the convex curved substrate 3 at a high speed of 80-600 m / s on the ground Ni substrate 3 to obtain a high surface area. High-energy, high-density substrate surface with micro-nano pits, and then ultrasonically clean and purify the surface of the convex curved substrate 3 for 30 minutes, then put it into the growth chamber, vacuumize and clean the growth chamber, start the DC plasma arc, and then introduce high-concentration active hydrogen Atoms further reactively etched the micro-nano pits on the surface of the convex curved nickel substrate, so that the substrate formed micro-nano pits with a specific structure and high surface energy, which induced the nucleation and growth of graphene.

[0035] A direct current plasma jet chemical vapor deposition system is used, and then the convex curved nickel substrate is placed on a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a diamond-graphene composite film and relates to a method for preparing a diamond-graphene composite film by adopting a chemical vapor deposition method, belonging to the technical field of novel inorganic functional material preparation. The method comprises the following steps: 1) carrying out special treatment on the surface of a heterogeneous substrate to obtain specific substrate surface micro-pit having high surface energy and high density so as to induce graphene to grow; 2) placing the substrate on the substrate in a vacuum deposition chamber of a direct current plasma jetting growth system to grow a single-layer or minority-layer graphene film; 3) and controlling growth parameter conditions to achieve the self-coordination of a carbon bond atom structure of graphene on the surface layer, thus a diamond microstructure is evolved for growing a diamond film and the diamond-graphene composite film is prepared. The preparation method has simple and reliable process, high efficiency and no pollution, is beneficial to environmental protection and is suitable for industrial production.

Description

technical field [0001] The invention relates to a method for preparing a diamond-graphene composite film, in particular to a method for preparing a diamond-graphene composite film through a chemical vapor deposition method and the regulation of growth parameters such as substrates to realize the evolution of the graphene microstructure into a diamond film structure. Composite membrane method. Background technique [0002] Diamond film has excellent comprehensive properties such as good wave transparency from far infrared to ultraviolet, extremely high hardness, high thermal conductivity, excellent thermal shock resistance, chemical stability, etc. It is the best among known materials at present Infrared window materials, so it will be the most potential new advanced aerospace materials such as infrared windows and fairings in the next generation. The U.S. Air Force has developed the use of diamond membranes to equip missile fairings, which have been used in new high-Mach n...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/02
Inventor 李多生周贤良左敦稳华小珍叶志国邹爱华俞应炜
Owner NANCHANG HANGKONG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com