Preparation method for Ga-doped ZnO nanometer material

Abstract

The invention discloses a preparation method for a Ga-doped ZnO nanometer material, and belongs to the technical field of preparation of nanometer materials. The preparation method is characterized by comprising the following steps of: dissolving zinc nitrate and gallium nitrate into de-ionized water, wherein the molar ratio of the zinc nitrate to the gallium nitrate is 1:0.01 to 1:0.1, and a PH value is controlled within the range of 9 to 11; performing ultrasonic treatment on the mixed solution for 30 minutes to obtain a reaction precursor solution; ultrasonically washing a fluorine-doped tin oxide (FTO) conductive glass substrate by using acetone, absolute ethanol, isopropyl alcohol and the de-ionized water, and drying the washed FTO conductive glass substrate; placing the treated glass substrate in the prepared reaction precursor solution, and sealing the reaction precursor solution and preserving the heat; and taking the glass substrate out, flushing the glass substrate by using the de-ionized water, and drying the glass substrate to obtain the glass substrate to which the Ga-doped ZnO nanometer material is attached. The preparation method is low in reaction temperature and low in cost, and simple equipment is used; and in addition, the prepared product has a fluffy and porous surface, high porosity and high electric conductivity, and is applicable to devices such as dye sensitized solar cells and the like.

Description

technical field [0001] The invention belongs to the technical field of nanometer material preparation, and in particular provides a method for preparing Ga-doped nanometer ZnO. Ga-doped ZnO nanomaterials with nanoflower-like structure were synthesized by hydrothermal method. Background technique [0002] ZnO is a semiconductor material with a forbidden band width of 3.37eV and an exciton binding energy of 60meV at room temperature, and has broad application prospects in optoelectronic and electronic devices. ([1] ZnO has a band gap of 3.37eV at room temperature and a semiconductor material with an exciton binding energy of 60meV, which has broad application prospects in optoelectronic and electronic devices. ([1] Pan, Z.W., Z.R. Dai and Z.L. Wang, Nanobelts of semiconductor oxides. Science, 2001. 291(5510): p. 1947. [2]. Lin, C.H., et al., Preparation and cathodoluminescence of ZnO phosphor. Materials chemistry and physics, 2003. 77(3) : p. 647-654.) However, compared wit...

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Problems solved by technology

Although the above method is simple to operate, environmentally friendly and low in cost, the temperature required for the reaction is high, the pressure is high and the reaction time is long

For solar cell photoanodes that require glass as a carrier, temperatures above 600°C will cause irreparable damage to the glass substrate

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