Edge-emitting diode semiconductor laser with raster structure

Abstract

The invention discloses an edge-emitting diode semiconductor laser with a raster structure and belongs to the optoelectronic technical field of semiconductors. The edge-emitting diode semiconductor laser comprises a semiconductor laser epitaxial structure, a silicon dioxide insulating layer, an upper layer of P type electrode and a lower layer of P type electrode, wherein the semiconductor laser epitaxial structure consists of a substrate, an N type limit layer, an N type waveguide layer, a multi-quantum well active region, a P type waveguide layer, a P type limit layer and a P type ohmic contact layer; and the raster structure is grown on a crestiform table. The photolithographic process is adopted in a manufacturing process; and after scraping, a chip is sintered on a copper heat sink and is packaged and fixedly arranged on a radiating base. According to the structure, due to the introduction of the raster structure on the crestiform table, the lateral diffusion of current carriers injected into an active layer is inhibited, the uniformity of the current carriers in the active area is improved, and the threshold current of a semiconductor laser is reduced. The edge-emitting diode semiconductor laser is simple in manufacturing process, low in cost and good in repeatability.

Description

technical field [0001] An edge-emitting semiconductor laser with a grating structure belongs to the technical field of semiconductor optoelectronics and relates to a semiconductor laser. Background technique [0002] Semiconductor lasers are widely used in important fields such as optical fiber communication, optical disk access, spectral analysis, and optical information processing due to their small size, light weight, and low price. And it is especially suitable for military fields such as laser night vision, laser fuze, and laser radar. Edge-emitting semiconductor lasers are an important part of the field of semiconductor lasers. They directly use the natural cleavage planes of semiconductor materials as resonator planes, with simple processes and perfect crystal planes. Edge-emitting semiconductor lasers have the following advantages: [0003] 1. Since the lateral dimension of the active layer is reduced, the symmetry of the light field is increased, so the coupling e...

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Problems solved by technology

[0006] Since the edge-emitting semiconductor laser applies the injection current to the strip-shaped electrode, the concentration gradient formed by the non-equilibrium minority carriers injected into the active layer from the center to both sides makes it inevitable that lateral diffusion will occur. This will affect the uniformity of carrier distribution in the active region, thus adversely affecting the threshold characteristics, output mode, and output power of the edge-emitting laser.

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