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Photosensitive resin composition, low dielectric constant light shielding layer and liquid crystal display apparatus using the same

A technology of photosensitive resin and composition, applied in optics, optical components, opto-mechanical equipment, etc., can solve the problems of poor developability, prolonged developing time, poor resolution, etc.

Inactive Publication Date: 2012-09-19
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This can create problems such as poor developability, prolonged development times and poor resolution

Method used

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  • Photosensitive resin composition, low dielectric constant light shielding layer and liquid crystal display apparatus using the same
  • Photosensitive resin composition, low dielectric constant light shielding layer and liquid crystal display apparatus using the same
  • Photosensitive resin composition, low dielectric constant light shielding layer and liquid crystal display apparatus using the same

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preparation example Construction

[0054] The polybasic acid anhydride (C) is used in the preparation of the photosensitive resin composition in order to increase the acid value of the alkali-developable resin composition, thereby improving image shape, developability and developing rate. Examples of polybasic anhydrides (C) include, but are not limited to, succinic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, 2,2',3,3'-benzophenone tetracarboxylic anhydride, 3,3',4 , 4'-benzophenone tetracarboxylic anhydride, ethylene glycol double anhydro trimellitate, glycerol three anhydro trimellitate, phthalic anhydride, hexahydrophthalic anhydride, methyl hydrogen o Phthalic anhydride, tetrahydrophthalic anhydride, nadic anhydride, methylnadic anhydride, trialkyltetrahydrophthalic anhydride, 5-(2,5-dioxotetrahydrofuran)- 3-Methyl-3-cyclohexenyl-1,2-dicarboxylic anhydride, trialkyltetrahydrophthalic anhydride-maleic anhydride adduct, dodecenylsuccinic anhydride, and methylhumic anhydride (m...

Embodiment 1

[0098] Synthesis Example 1: Preparation of 1,1-bis(4'-epoxypropoxyphenyl)-1-(1"-biphenyl)-1-cyclohexylmethane

[0099] Preparation of 1,1-bis(4'-hydroxyphenyl)-1-(1"-biphenyl)-1-cyclohexylmethane

[0100] 70.5 g of biphenylcyclohexyl ketone was mixed with 200.7 g of phenol and 10.15 g of thioacetic acid, and then 40.0 g of trifluoromethanesulfonic acid was added dropwise thereto at 18° C. for 20 minutes. After the reaction mixture was reacted at 17-19°C for 18 hours, 500 g of water was added thereto to terminate the reaction. The organic layer was washed with 500 g of toluene until the pH reached 3-4, then the organic layer was recovered. Toluene, water and excess phenol were removed from the reaction mixture. The residue was further purified with toluene to obtain 59.2 g of pale yellow crystals (yield 51%). The melting point of the crystals was measured to be 239.5°C, and the crystals were confirmed to be the substance described in the title.

[0101] Preparation of 1,1...

preparation Embodiment 1

[0104] With 16.95g 1,1-bis(4'-epoxypropoxyphenyl)-1-(1"-biphenyl)-1-cyclohexylmethane (hereinafter Referred to as "compound a") and 4.43g acrylic acid (hereinafter referred to as "compound b-1"), 0.06g 2,6-di-tert-butyl-p-cresol, 0.11g tetrabutylammonium acetate and 14.25g Propylene glycol-1-monomethyl ether-2-acetate was mixed, followed by stirring at 120° C. for 16 hours. After cooling to room temperature, 7.18 g of propylene glycol-1-monomethyl ether 2-acetate, 4.82 g of succinic anhydride (hereinafter referred to as "compound c-1") and 0.25 g of tetrabutylammonium acetate were added to the reaction mixture, followed by stirring at 100° C. for 5 hours. Then, 5.08 g of 1,1 obtained in Step 2 of Example 1 -bis(4'-epoxypropoxyphenyl)-1-(1"-biphenyl)-1-cyclohexylmethane (hereinafter referred to as "compound d-1") and 2.18g propylene glycol-1- Monomethyl ether-2-acetate was added to the reaction mixture, followed by stirring at 120°C for 2 hours, at 80°C for 2 hours, then at 40...

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Abstract

The invention refers to a photosensitive resin composition that includes photopolymerisable unsaturated adhesive resin, olefinic unsaturated functional change monomer, a polymerization initiator, black organic mixed pigment and solvent, wherein the photopolymerisable unsaturated adhesive resin is formed by the reaction of an epoxy adduct obtained by adding unsaturated acid in epoxy resin represented by a formula (1) and multiple anhydride. The invention provides the photosensitive resin used for a light shielding layer which has an improved shielding performance represented by 1.0 / [mu] m or greater optical density, excellent performances on elastic recovery rate, adherency to base materials and developing edge and high image resolution with altitude difference, wherein good solubility in a developer before and after exposure can form lines and points with a size of 10-100 [mu] m and a dielectric constant of the lines and points is no greater than 8F / m.

Description

technical field [0001] The invention relates to a photosensitive resin composition, a light-shielding layer with a low dielectric constant and a liquid crystal display device using the light-shielding layer, especially an alkali-soluble photosensitive resin composition, which is used for high-resolution , a light-shielding layer with low dielectric constant and high light-shielding properties, and a liquid crystal display device using the resin composition. Background technique [0002] Liquid crystal displays are one of the most widely used flat panel displays today, in which an array of thin film transistors (TFTs) including pixel electrodes and an array of filters including common electrodes are each arranged in opposition to each other. A liquid crystal (LC) layer is located between them. The liquid crystal display device displays an image by applying a voltage between a pixel electrode and a common electrode to rearrange LC molecules included in an LC layer and control...

Claims

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Application Information

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IPC IPC(8): G03F7/032G02F1/1335
CPCC07D207/08C07D231/18C07D409/12C07D417/12C09B11/24G02B5/223G03F7/0007G03F7/027G03F7/028
Inventor 韩淅崔庆植罗锺昊柳善李学周尹炫珍
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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