Chemical nickel plating solution and aluminum silicon carbide plating method

An electroless nickel plating solution and carbon silicon technology, applied in the field of metal electroplating, can solve the problems of increased surface roughness and porosity, poor bonding force of the coating on silicon carbide, material failure, etc., and achieve good coverage, stable process, The effect of easy operation

Inactive Publication Date: 2012-10-17
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, before electroplating, the crystal material must undergo a roughening process in order to improve the bonding force of the coating. The materials that can corrode and roughen the crystal surface are strong corrosive media such as strong acid and alkali, and these strong corrosive media are very corrosive to aluminum alloys. Strong, it will cause the aluminum on the surface of the material to be over-corroded, the roughness and porosity of the hollow surface will increase greatly, and even the silicon carbide particles will fall off from the material, affecting the airtightness of the material and even causing the material to fail
If the pre-treatment is not in place, the coating on the silicon carbide crystal will not grow (dew point) or the bonding force of the coating on the silicon carbide will be poor (the coating will blister)

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] A kind of electroplating pretreatment and primer coating process of carbon silicon aluminum material workpiece, the specific process flow is as follows:

[0017] 1. Shot peening: first, the surface of the workpiece is shot peened, using 300-mesh glass beads at a pressure of 2.5 atmospheres;

[0018] 2. Degreasing: After shot blasting, the workpiece is degreased. The components of the degreasing liquid are: 30 g / L sodium phosphate, 30 g / L sodium carbonate, 2 ml / L OP-10, The degreasing temperature is controlled at 65-70°C, and the time is about 45 seconds, and it enters the activation process after being washed with tap water;

[0019] 3. Activation: The purpose of activation is to moderately etch and roughen the silicon carbide in the carbon silicon aluminum material, so as to improve the bonding force of the coating. The composition of the activation solution is: 900ml / L nitric acid, 80g / L ammonium bifluoride, activated at 25°C for 60 seconds, and washed with two pure ...

Embodiment 2~3

[0025] Compared with Example 1, Examples 2-3 differ in the composition of the electroless nickel plating solution and the zinc dipping solution. Table 1 and Table 2 are the composition comparisons of the electroless nickel plating solution and the zinc dipping solution in Examples 2 to 3 and Example 1.

[0026] Nickel sulfate hexahydrate, g / L Sodium hypophosphite, g / L Disodium hydrogen phosphate, g / L Sodium aminotrimethylene phosphonate, g / L KIO3, mg / L Polyethylene glycol.g / L temperature, ℃ time, min Example 1 30 30 30 35 10 2.5 80 30 Example 2 25 30 25 40 8 2.5 90 20 Example 3 40 40 40 50 20 3 85 20

[0027] Sodium gluconate, g / L Sodium potassium tartrate, g / L Zinc sulfate, g / L Sodium carbonate, g / L Lithium fluoride, g / L temperature, ℃ time, s Example 1 120 60 30 5 3 20 30 Example 2 100 50 25 4 3 20 60 Example 3 120 80 40 7 5 20 30

[0028] The...

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Abstract

The invention discloses a chemical nickel plating solution and an aluminum silicon carbide plating method. The invention aims at the aluminum silicon carbide material with high silicon carbide content. According to the invention, the plated nickel layer has a good spreadability as a primer coat on the surface of an aluminum silicon carbide workpiece (metals such as gold, silver and tin can further be plated on the plated nickel layer), such that the method is suitable for batch productions. The plated layer can resist a temperature no less than 300 DEG C. After a high-temperature test, the plated layer has no peeling or blistering phenomenon when tested under a 10-time microscope. The method is suitable for modules and subassemblies, and can satisfy high-temperature welding of materials such as metal solders. The method is based on an aluminum alloy plating process, such that the method is advantaged in simple operation, stable process, low cost, and suitability for batch productions.

Description

technical field [0001] The invention relates to the technical field of metal electroplating, in particular to the batch electroplating production technology of carbon silicon aluminum materials. Background technique [0002] With the rapid development of information technology, the integration of chips in today's device components is getting higher and higher, the assembly density of microcircuits is also getting higher and higher, the size of chips is getting bigger and power is getting bigger and bigger, heat dissipation requirements At the same time, the chips are constantly developing towards larger sizes, and the substrates in modules and components are also transitioning from soft substrates (PCB, etc.) to hard substrates (LTCC, AlN, etc.). Although traditional packaging metals such as Al and Cu have excellent thermal conductivity, their thermal expansion coefficients and chips such as Si and GaAs, as well as ceramics and capacitor dielectric materials, have high therm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/36
Inventor 张韧
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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