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Preparation method for vanadium dioxide thin film and product thereof, and application of product

A technology of vanadium dioxide and thin film, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems that laser protection cannot meet the needs, and achieve large phase change range, high surface smoothness, particle evenly arranged effect

Inactive Publication Date: 2012-10-24
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional laser protection method uses the principle of linear optics for protection, but this method has its limitations: because the device is only sensitive to the wavelength band of the incident light, it will also reflect the weak light of this band while absorbing the strong light of this band , that is to say, while the device prevents the destruction of strong laser light of a certain wavelength, it also prevents the reception of weak light of this wavelength
Therefore, laser protection based on the principle of linear optics can no longer meet the needs

Method used

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  • Preparation method for vanadium dioxide thin film and product thereof, and application of product
  • Preparation method for vanadium dioxide thin film and product thereof, and application of product
  • Preparation method for vanadium dioxide thin film and product thereof, and application of product

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Embodiment 1

[0031] The first step: cleaning the sapphire substrate. In a preferred embodiment, in the cleaning step, first, concentrated sulfuric acid (for example, 85%) with a mass percentage of more than 70% can be mixed with hydrogen peroxide at a mass ratio of 3:1, and then the mixed solution is heated to 80~120℃.

[0032]Next, put the sapphire substrate into the mixed solution for 10-30 minutes; then take out the sapphire substrate, put it into a propanol solution for 10-30 minutes of ultrasonic treatment; finally take out the sapphire substrate and rinse it with deionized water, and Drying treatment, thus completing the overall cleaning step.

[0033] Step 2: Place the sapphire substrate cleaned in step 1 in the ion beam coating machine, and vacuum the inner chamber of the ion beam coating machine to 3.0×10 at room temperature (20°C±5°C). -6 Torr; then pass into it argon and oxygen, wherein the flow of the argon is passed into, for example, 20sccm, and the flow of the oxygen into ...

Embodiment 2

[0037] In embodiment 2, its operating steps are roughly the same as in embodiment 1, except that the ion beam sputtering process conditions are changed to: the flow of argon gas fed into is 21 sccm, and the flow of oxygen gas is 1.5 sccm; the formed working pressure is 3.6×10 -4 Torr, and the sputtering time is 40 minutes, and the film deposition thickness is 100nm. In addition, in step three, the annealing temperature is 460° C., and the annealing time is about 60 minutes.

[0038] By measuring the temperature-resistance curve of the product, such as Figure 4 The phase transition temperature of the product shown is 70°C, and its phase transition amplitude reaches 3.6 orders of magnitude.

Embodiment 3

[0040] In embodiment 3, its operating steps are roughly the same as in embodiment 1, except that the ion beam sputtering process conditions are changed to: the flow of argon gas fed into is 22 sccm, and the flow of oxygen is 1.6 sccm; the formed working pressure is 4.0×10 -4 Torr, the sputtering time is 80 minutes, and the film deposition thickness is 280nm; in addition, in step 3, the annealing temperature is controlled at 490°C, and the annealing time is 30 minutes.

[0041] Measure the resistance temperature curve of this product, such as Figure 5 shown. It can be seen from the figure that the phase transition temperature of the product is 65°C, and the phase transition amplitude reaches 4 orders of magnitude.

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Abstract

The invention discloses a preparation method for a vanadium dioxide thin film. The method comprises the following steps: (1) using sapphire as a substrate and cleaning the substrate; (2) placing the cleaned substrate in an ion beam coating machine and carrying out ion beam sputtering under the condition of room temperature so as to deposit a vanadium dioxide thin film on the substrate, wherein during the process of ion beam sputtering, vacuum-pumping is carried out in the coating machine at first until the pressure in the coating machine is lower than 5.0 * 10<-6> Torr and then argon and oxygen are blown in so as to form a working pressure of 3.0 * 10<-4> to 4.0 * 10<-4> Torr; and (3) taking out the substrate deposited with the vanadium dioxide thin film for annealing under a nitrogen atmosphere and carrying out cooling after annealing so as to obtain a final product, wherein annealing temperature is 420 to 490 DEG C and annealing time is 120 to 30 min. The invention also discloses the corresponding product and specific application thereof. According to the invention, the product of the thin film with excellent phase transition properties, a great phase transition amplitude, consistent particle sizes, uniform arrangement and high reliability can be obtained at room temperature and is especially applicable to aspects like laser protection.

Description

technical field [0001] The invention belongs to the technical field of plating of metal materials, and more specifically relates to a preparation method of a vanadium dioxide thin film and its corresponding products and applications. Background technique [0002] With the rapid development of laser technology and the continuous expansion of the scope of application, laser threats are ubiquitous in modern battlefields, and laser blinding weapons have become an important means of jamming and destroying enemy infrared systems. Therefore, how to effectively protect the laser has become a very important and significant research topic. The traditional laser protection method uses the principle of linear optics for protection, but this method has its limitations: because the device is only sensitive to the wavelength band of the incident light, it will also reflect the weak light of this band while absorbing the strong light of this band , That is to say, while the device prevents...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/34
Inventor 黄章立陈四海
Owner HUAZHONG UNIV OF SCI & TECH
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