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Lead strontium titanate thin film and production method thereof

A strontium lead titanate thin-film technology, applied in the field of ferroelectric materials, achieves good application prospects, optimized tuning rate, and low processing temperature

Inactive Publication Date: 2013-01-23
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, there are few reports of better tunability of thin films prepared at low temperature, especially methods using magnetron sputtering

Method used

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  • Lead strontium titanate thin film and production method thereof
  • Lead strontium titanate thin film and production method thereof
  • Lead strontium titanate thin film and production method thereof

Examples

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Effect test

preparation example Construction

[0033] The present invention provides thin film preparation at different positions: axial and eccentric sputtering (the axis normal of the target and the center normal of the material do not coincide). Optionally, during the sputtering process, the axis normal of the film deviates from the target center normal by 0-40 degrees.

[0034] The above base layer is Si substrate or single crystal substrate, such as: MgO, LaAlO 3 、Al 2 o 3 and SrTiO 3 Wait.

[0035] Regarding the preparation process of the target material, for example, the following two steps may be included:

[0036] 1) Use strontium carbonate, titanium oxide and dilead trioxide powders according to the required stoichiometric ratio (compared with the required film composition, Pb excess 25wt%, Sr excess 6wt%), and use agate balls for coarse grinding 24 hours, and synthesized at 850°C after drying;

[0037] 2) Finely grind the synthesized powder for 48 hours, add a binder after drying and arrange plastic, and f...

Embodiment 1

[0048] Example 1: a lead strontium titanate (PST) thin film prepared under the condition that the substrate temperature is 300°C.

[0049] The bottom electrode of lanthanum nickelate LNO with (100) orientation (on SiO 2 / Si substrate) introduced into the magnetron sputtering instrument at a position deviated from the target axis (Off axis, the normal line of the target axis is 5cm away from the normal line of the film center), and evacuated until the initial vacuum degree is less than 10 -6 Torr. Raise the substrate temperature to the required temperature to start pre-sputtering, the heating rate is 10°C / min, the sputtering power is 70W, the amount of argon introduced is 16SCCM, and the sputtering pressure is 4Pa. After the pre-sputtering time is 60min, start sputtering. According to the known sputtering rate (0.6nm / min), when the required film thickness (300nm) is reached, stop sputtering, turn off the argon gas, turn on the oxygen gas, and keep The substrate temperature wa...

Embodiment 2

[0052] Example 2: a lead strontium titanate (PST) thin film prepared under the condition that the substrate temperature is 350°C.

[0053] The same settings as in Embodiment 1 will not be described in detail again. In this embodiment, the substrate temperature is set to 350°C, the pre-sputtering is started for 60 minutes, and then the sputtering is started, and the thin film is sputtered according to the known sputtering rate. When the thickness reaches the required thickness, the sputtering is stopped. Keep the substrate temperature at 350°C, turn off the argon, turn on the oxygen, and anneal the film for 1 hour. After the annealing, lower the temperature to room temperature, turn on the magnetron sputtering instrument, and take out the film.

[0054] The upper electrode preparation and post-annealing process are the same as in Example 1.

[0055] The structure and performance detection of the thin film prepared in this embodiment found that, from figure 1 It can be seen th...

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Abstract

The invention relates to a lead strontium titanate thin film and a production method thereof. According to the method, a lead strontium titanate thin film is prepared on a substrate with bottom electrodes by using an in situ radio frequency magnetron sputtering method; and the substrate is heated to 200-500 DEG C during thin film preparation so that sputtering and film crystallizing are carried out under the substrate temperature to produce the film. The thin film produced by the invention requires extremely low treatment temperature, can be directly integrated with a silicon device and has excellent performances, so that the thin film produced by the method has better application prospect; and changing the crystallinity of the thin film can achieve modulation of the dielectric constants of the thin film under a zero field and a high field through changing the substrate temperature, so that the tuning rate is optimized within a wider range.

Description

technical field [0001] The invention belongs to the field of ferroelectric materials, and in particular relates to a method for preparing strontium-lead titanate ferroelectric films with high dielectric tuning rate at a relatively low substrate temperature by using a magnetron sputtering method. Background technique [0002] With the continuous advancement of electronic information technology (wireless communication devices, dynamic random access memory, etc.), the expansion of application range and the continuous popularization, it strongly depends on ferroelectric with high dielectric constant, high tuning rate (adjustability), and low loss. film material. In addition, in order to realize the industrial application of thin film materials, that is, to directly integrate thin film materials on silicon semiconductor substrates, it is necessary to prepare thin films at lower processing temperatures. Because when the processing temperature is higher than 500°C, the silicon sem...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35C23C14/58H01L41/187H01L41/39H01L41/47
Inventor 王根水李魁董显林雷秀云李涛陈莹
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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