High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof

A single crystal silicon wafer and additive technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve problems such as excessive corrosion, aggravated environmental pollution, and increased waste water treatment costs, so as to reduce production costs and eliminate Effects of environmental pollution and high utilization value

Active Publication Date: 2013-01-23
绍兴拓邦新能源股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, wet etching is mainly used in the production of industrialized monocrystalline silicon cells. Sodium hydroxide and isopropanol are added to the etching solution. The following problems exist in the process: ①The reaction process is not well controlled, and it is easy to cause excessive corrosion, thereby It leads to an increase in the fragmentation rate of silicon wafers; ②With the increase of sodium silicate in the reaction process, the texturing effect is unstable and the yield is difficult to control; ③The temperature of the texturing process is close to the boiling point of isopropanol, and as the reaction proceeds, it will cause A large amount of volatilization of isopropanol...

Method used

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  • High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof
  • High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof

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Embodiment 1

[0029] To prepare alcohol-free single crystal texturing additives, dissolve 10g of sodium alginate, 18g of trisodium phosphate, 2g of sodium lauryl sulfate, 1.5g of vitamin C, and 25g of propylene carbonate into 1L of deionized water to obtain an alcohol-free single crystal. fleece additives. Add 2000g of sodium hydroxide and 1L of alcohol-free single crystal texturing additive into 100L of deionized water to obtain a texturing solution. Raise the temperature of the texturing solution to 85°C, and then immerse the monocrystalline silicon wafer for solar cells in the texturing solution for texturing. The texturing time is 800s. The size of the pyramid textured surface of the obtained silicon wafer is 2-3 μm as detected by scanning electron microscopy, and Uniform size.

Embodiment 2

[0031] To prepare alcohol-free monocrystalline texturing additives, dissolve 15g sodium alginate, 27g trisodium phosphate, 3g sodium lauryl sulfate, 2.25g vitamin C, and 37.5g propylene carbonate into 1.5L deionized water to obtain alcohol-free monocrystalline Crystal Texturing Additive. Add 3000g of sodium hydroxide and 1.5L of alcohol-free single crystal texturing additive into 100L of deionized water to obtain a texturing solution. Raise the temperature of the texturing solution to 75°C, and then immerse the monocrystalline silicon wafer for solar cells in the texturing solution for texturing. The texturing time is 1000s. The size of the pyramid textured surface of the obtained silicon wafer is 2-3 μm as detected by the scanning electron microscope, and Uniform size.

Embodiment 3

[0033] To prepare alcohol-free single crystal texturing additives, dissolve 20g sodium alginate, 36g trisodium phosphate, 4g sodium lauryl sulfate, 3g vitamin C, and 50g propylene carbonate into 2L deionized water to obtain alcohol-free single crystal texturing additive. Add 4000g of sodium hydroxide and 2L of alcohol-free single crystal texturing additive into 100L of deionized water to obtain a texturing solution. Raise the temperature of the texturing solution to 70°C, and then immerse the monocrystalline silicon wafer for solar cells in the texturing solution for texturing. The texturing time is 800s. The size of the pyramid textured surface of the obtained silicon wafer is 2-3 μm as detected by the scanning electron microscope, and Uniform size.

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Abstract

The invention relates to a high-boiling point monocrystalline silicon wafer surface texturing additive and a using method thereof and belongs to the technical field of production of solar cells. The additive is prepared from the following raw materials in percentage by weight: 0.01 to 3 percent of sodium alginate, 0.01 to 3 percent of trisodium phosphate, 0.001 to 1 percent of lauryl sodium sulfate, 0.1 to 2 percent of vitamin, 0.1 to 5 percent of propylene carbonate and the balance of deionized water; when the additive is used, a sodium oxide solution is needed to be added into the additive so as to obtain a texturing solution; the volume percentage ratio of the additive to the sodium oxide solution is (0.1-5):100; the temperature of the texturing solution is 70 to 90 DEG C; and the texturing time of the monocrystalline silicon is 600 to 1,500s. The reaction speed is controlled by using high viscosity of the sodium alginate, and the concentration of sodium hydroxide is increased simultaneously, so that a pyramid texture which is uniform in size is obtained; and the sodium alginate has the chelation function on metal and the function of cleaning the silicon wafer, and is low in cost.

Description

technical field [0001] The invention relates to a high-boiling-point monocrystalline silicon chip surface texture additive and a method for using the same, belonging to the technical field of solar cell production. Background technique [0002] In the preparation process of crystalline silicon solar cells, in order to improve the performance and efficiency of solar cells, it is necessary to make suede on the surface of the silicon wafer to form a pyramid structure, so that the optical path of the incident light is increased, the light absorption is increased, and the reflectivity is reduced. , thereby improving the conversion efficiency of solar cells. At present, wet etching is mainly used in the production of industrialized monocrystalline silicon cells. Sodium hydroxide and isopropanol are added to the etching solution. The following problems exist in the process: ①The reaction process is not well controlled, and it is easy to cause excessive corrosion, thereby It leads ...

Claims

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Application Information

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IPC IPC(8): C30B33/10
Inventor 李一鸣张震华冯幼强
Owner 绍兴拓邦新能源股份有限公司
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