Preparation method of addressable nano molecular junction

A nano-scale, molecular junction technology, applied in nanotechnology, nanotechnology, nanotechnology for information processing, etc., can solve problems such as complex devices, affecting nano-device research, and unstable molecular junctions, so as to prevent leakage and ensure Addressability, effects of enhanced adhesion

Inactive Publication Date: 2015-02-18
NORTHEASTERN UNIV LIAONING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method has problems such as complex devices and unstable molecular junctions. It needs to be further simplified and improved to obtain addressable nanoscale molecular junctions, and to realize variable temperature and photoelectric testing of the electrical characteristics of molecular devices.
In addition, the above-mentioned devices need to be moved into a vacuum test system for electrical characteristic testing after preparation, and are easily polluted and damaged during transportation. Applied Research

Method used

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  • Preparation method of addressable nano molecular junction
  • Preparation method of addressable nano molecular junction

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0023] In step 101, the piezoelectric ceramic substrate is cleaned.

[0024] The piezoelectric strain constant is 2.25×10 -10 m / v P8-1 piezoelectric ceramics (lead zirconate titanate) as the substrate, immerse in acetone, absolute ethanol and deionized water for 5 to 8 minutes, respectively, and ultrasonically clean the remaining inorganic substances on the piezoelectric ceramic substrate And organic matter to ensure that it has a good charge transport ability, and let it dry naturally.

[0025] In step 102, a gate and a gate insulator are prepared.

[0026] like figure 2 In the process shown in No. 1, before preparing the gate and gate insulator, a silicon oxide film with a thickness of 50-70 nm is deposited on the surface of the piezoelectric ceramic substrate by reactive magnetron sputtering, and single crystal silicon is used as the target material. Argon is used as the working gas, and oxygen is used as the reaction gas. The range of process parameters is: the volume ...

Embodiment 2

[0032] In step 101, the piezoelectric ceramic substrate is cleaned. The piezoelectric strain constant is 2.25×10 -10 m / v P8-1 piezoelectric ceramics (lead zirconate titanate) as the substrate, immerse in acetone, absolute ethanol and deionized water for 5 to 8 minutes, respectively, and ultrasonically clean the remaining inorganic substances on the piezoelectric ceramic substrate And organic matter to ensure that it has a good charge transport ability, and let it dry naturally.

[0033] In step 102, a silicon nitride film is prepared. like figure 2 In the process shown in No. 1, a silicon nitride film with a thickness of 50-70 nm is deposited on the surface of the piezoelectric ceramic substrate by plasma-enhanced chemical vapor deposition (PECVD). The range of process parameters is: the temperature of the piezoelectric ceramic substrate is 250 ~300℃, RF power 150~250W, reaction gas flow ratio m(SiH 4 ):m(NH 3 )=30:20mL / min, reaction pressure 2~5Pa. It can also be reali...

example 3

[0039] In step 101, the piezoelectric ceramic substrate is cleaned. The piezoelectric strain constant is 2.25×10 -10 m / v P8-1 piezoelectric ceramics (lead zirconate titanate) as the substrate, immerse in acetone, absolute ethanol and deionized water for 5 to 8 minutes, respectively, and ultrasonically clean the remaining inorganic substances on the piezoelectric ceramic substrate And organic matter to ensure that it has a good charge transport ability, and let it dry naturally.

[0040] In step 102, a silicon oxide film is prepared. like figure 2 In the process shown by the middle mark 1, a silicon oxide film with a thickness of 50-70nm is deposited on the surface of the piezoelectric ceramic substrate by reactive magnetron sputtering method, with single crystal silicon as the target material, argon as the working gas, oxygen As the reaction gas, the range of process parameters is: oxygen volume fraction 0-50%, reaction pressure 0.02-0.07Pa. It can also be obtained by PEC...

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Abstract

The invention discloses a preparation method of an addressable nano molecular junction, belonging to the field of micro machining of nano materials and testing of nano electronic devices. The preparation method comprises the steps of: firstly, washing a piezoelectric ceramic substrate; preparing an insulation layer film on the piezoelectric ceramic substrate and obtaining a micro nano strip-shaped bulge on the middle; preparing a narrow-neck-shaped Au electrode film layer on the insulation layer film; placing the piezoelectric ceramic substrate in a vacuum chamber, respectively welding leads on two sides of the piezoelectric ceramic substrate and leading out a vacuum chamber; electrifying the piezoelectric ceramic substrate to ensure that the Au electrode film layer is broken to obtain a metal electrode pair with a nano gap; and finally, filling an organic molecular material in the nano electrode gap to obtain the addressable nano molecular junction. According to the invention, the gap controllable nano Au electrode pair is obtained through regulating bias voltages and electrifying time of two ends of the piezoelectric ceramic substrate, thus pollution and thermally induced ablation on a metal molecular interface when electrodes deposit on a molecular layer are avoided through molecule self-assembly in the gap.

Description

technical field [0001] The invention belongs to the field of microfabrication of nanomaterials and testing of nanoelectronic devices, and in particular relates to a preparation method of addressable nanoscale molecular junctions. Background technique [0002] With the rapid development of electronic communication and computer technology, the requirements for device integration and micronanoization are getting higher and higher. Due to their photoelectric, magnetoelectric and other characteristics, and the advantages of easy tailoring, high flexibility and compatibility with microelectronics technology, organic molecules, It has broad application prospects in sensing, driving, storage and intelligent systems, and has attracted extensive attention from researchers. [0003] The construction of electronic devices on the molecular scale is the trend of ultra-miniaturization of electronic circuits in the future. In order to make molecular devices practically applicable, it is nec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00B82Y10/00
Inventor 李建昌吴隽稚周成
Owner NORTHEASTERN UNIV LIAONING
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