Semiconductor laser cavity surface passivation film structure and preparation method thereof

Abstract

The invention relates to the technical field of semiconductor photoelectronic devices, in particular to a semiconductor laser cavity surface passivation film structure and a preparation method thereof. The semiconductor laser cavity prepares a cubic boron nitride (c-BN) film layer to serve as a passivation film of a laser cavity face, effectively reduces catastrophe optical damage of the laser cavity face, and improves reliability and stability of a laser device. After ion prewashing is conducted on the front cavity face and the back cavity face of a semiconductor laser bar, a magnetron sputtering method is adopted to deposit a cubic boron nitride (c-BN) layer on the front cavity face and the back cavity face of the bar, and then an anti-reflection film and a high-reflection film are respectively plated on the front cavity face and the back cavity face. The structure and the method can be applied to various semiconductor lasers.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a semiconductor laser cavity surface passivation film structure and a preparation method thereof. technical background [0002] Semiconductor lasers are core devices in the fields of optical communication, optical pumping, and optical storage. Due to the influence of the interface state, impurity contamination or strain on the cavity surface, the light absorption is enhanced, and the temperature is sharply increased. The temperature increase further deteriorates the interface and enhances the light absorption. It is easy to oxidize and generate defects, which makes the laser performance occur. Attenuation and optical catastrophic damage, which is particularly prominent for high-power lasers. In order to reduce the influence of this factor and improve the reliability of laser devices, the laser cavity surface is usually coated. Generally, this coating...

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Problems solved by technology

The practice that is often adopted in the world is to coat a layer of Si as a passivation barrier layer before plating the cavity mask, but the light band suitable for Si is narrow, and the light absorption is large, so for semiconductor lasers with shorter wavelengths, Si passivation The application of chemical technology has certain limitations

Moreover, in order to minimize the oxidation of the cavity surface, cleavage is usually carried out in an ultra-high vacuum, and a passivation layer and a cavity film are immediately plated. Although this method can better improve the reliability of the device, it requires more equipment. High, complex process, expensive equipment

In addition, ion beam evaporation of ZnSe and ZnS after ion cleaning on the cavity surface is also a good passivation method. However, ZnSe and ZnS are prone to deliquescence and instability in humid environments, which have certain limitations for the application of lasers in certain aspects. limitation

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