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Preparation method of molybdenum trioxide nanorod

A technology of molybdenum trioxide and nanorods, which is applied in the field of nanomaterials to achieve high-efficiency growth, simple preparation process, and low defect density

Inactive Publication Date: 2013-05-08
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no preparation of α-MoO by pulsed laser deposition in the prior art. 3 Nanorod Array Technology

Method used

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  • Preparation method of molybdenum trioxide nanorod

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Deposition of orthorhombic MoO on single crystal Si(100) using an ArF excimer pulsed laser system with a wavelength of 193 nm 3 Nanorod array, the specific operation steps are:

[0035] Step 1, performing surface cleaning treatment on the single crystal silicon Si (100) substrate. The specific operation is as follows: first, immerse the single crystal silicon Si (100) substrate in acetone and ethanol solution for ultrasonic cleaning, then put it into deionized water for ultrasonic cleaning, and then dry it with cold air.

[0036] Step 2. Fix the substrate with a clean surface on the substrate holder in the vacuum growth chamber, and install α-MoO with a diameter of 60mm 3 For the target, the distance between the target and the substrate is 70mm, and the front of the substrate is kept facing the target.

[0037] Step 3. After the target material and the substrate are installed, close the vacuum growth chamber, use the combined vacuum acquisition system of the mechanica...

Embodiment 2

[0044] Deposition of orthorhombic MoO on single crystal Si(100) using an ArF excimer pulsed laser system with a wavelength of 193 nm 3 Nanorod array, the specific operation steps are:

[0045] Step 1, performing surface cleaning treatment on the single crystal silicon Si (100) substrate. The specific operation is as follows: first, immerse the single crystal silicon Si (100) substrate in acetone and ethanol solution for ultrasonic cleaning, then put it into deionized water for ultrasonic cleaning, and then dry it with cold air.

[0046] Step 2. Fix the substrate with a clean surface on the substrate holder in the vacuum growth chamber, and install α-MoO with a diameter of 60mm 3 For the target, the distance between the target and the substrate is 40 mm, and the front of the substrate is kept facing the target.

[0047] Step 3. After the target material and the substrate are installed, close the vacuum growth chamber, use a mechanical pump and a molecular pump to vacuum the g...

Embodiment 3

[0054] Deposition of orthorhombic MoO on single crystal Si(100) using an ArF excimer pulsed laser system with a wavelength of 193 nm 3 Nanorod array, the specific operation steps are:

[0055] Step 1, performing surface cleaning treatment on the single crystal silicon Si (100) substrate. The specific operation is as follows: first, immerse the single crystal silicon Si (100) substrate in acetone and ethanol solution for ultrasonic cleaning, then put it into deionized water for ultrasonic cleaning, and then dry it with cold air.

[0056] Step 2. Fix the substrate with a clean surface on the substrate holder in the vacuum growth chamber, and install α-MoO with a diameter of 60mm 3 The target, the distance between the target and the substrate is 80mm, and the front of the substrate is kept facing the target.

[0057] Step 3. After the target material and the substrate are installed, close the vacuum growth chamber, use the combined vacuum acquisition system of the mechanical pu...

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Abstract

The invention relates to a preparation method of a molybdenum trioxide nanorod. An alpha-MoO3 nanorod in oriented growth is excellent in field electron emission performance and relatively low in threshold electric field, and can be widely applied to field emission display apparatuses, super-capacitors, electrochemical energy storage device and the like. By utilizing a two-step spreading pulsed laser deposition technology, based on alpha-MoO3 as a target material, the alpha-MoO3 nanorod in an orthorhombic system is deposited on a silicon substrate, wherein the deposited alpha-MoO3 nanorod is high in density and less in diameter. The method comprises the following steps of: firstly, depositing a thinner MoO3 seed crystal layer on a substrate ablated by a conventional pulse laser; then reversing the sample; and further growing a uniform MoO3 nanorod on the seed crystal layer through a spreading pulsed laser deposition method. According to the preparation method provided by the invention, a single crystal MoO3 nanorod array which is high in degree of crystallinity and low in defect density can be prepared without a catalyst, and the preparation process is simple, easy to control, good in repeatability and environmental-friendly.

Description

technical field [0001] The invention relates to nanomaterial technology, in particular to an orthorhombic molybdenum trioxide (α-MoO2) applicable to high-performance field emission devices, supercapacitors and electrochemical energy storage devices 3 ) Preparation method of nanorods. Background technique [0002] MoO 3 Orthorhombic MoO 3 (α-MoO 3 ), monoclinic MoO 3 (β-MoO 3 ) and hexagonal MoO 3 , where α-MoO 3 is a thermodynamically stable phase. Orthorhombic MoO 3 It is a wide bandgap semiconductor material (Eg=3.05eV), which is caused by distortion [MoO 6 ]The octahedron is connected with common edges in one direction, and connected with common vertices in the other direction to form a two-dimensional infinitely stretched plane layer, and the layers are combined by weak van der Waals force. There are tetrahedral and octahedral cavities and extensive channels, which can serve as insertion sites and flow channels for ions. In recent years, one-dimensional transi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B29/62C30B23/02
Inventor 邹友生张亦弛汪海鹏楼东董宇辉窦康
Owner NANJING UNIV OF SCI & TECH
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