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Production method of high-purity tantalum target material

A production method and tantalum target material technology, which is applied in the field of high-purity tantalum target material production, can solve the problems of not fundamentally solving the production cost and complicated process, and achieve uniform grain size distribution, simple process, and good film formation performance effect

Active Publication Date: 2013-06-12
泰安晶品新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Similar to the Chinese patent literature report of the above-mentioned production method, there are also 201110236553.3, 201110430596.5, 201110460441.6, 201110321253.5, 200910117586.9, 201110460442.0, etc. The main improvement lies in the forging and rolling process, method, temperature, etc. There is no fundamental solution to the high production cost and the process more complex issues

Method used

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  • Production method of high-purity tantalum target material

Examples

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Embodiment 1

[0025] This example provides a production method of a high-purity tantalum alloy target, which includes the following steps in sequence:

[0026] (1) Select tantalum ingots with a purity greater than 99.999% electron beam melting as raw materials, cut the tantalum ingots into blocks, the size of the blocks is 5mm*10mm, put the tantalum blocks in the hydrogenation furnace, and pump the vacuum to 6.67×10 -3 Pa, then filled with 1atm hydrogen, and then evacuated to 6.67×10 -3 Pa, filled with hydrogen, adjust the pressure in the furnace to 10 -1 Pa level, start heating, the heating rate is 300°C / h, when the temperature reaches 450°C, keep the hydrogen pressure in the furnace at 1atm, continue to heat up, the cut-off temperature is 700°C, stop heating when the pressure in the furnace does not drop anymore, With the furnace cooling, the temperature is lower than 50 ℃ out of the furnace.

[0027] (2) Use a roller crusher to crush the tantalum particles that have been absorbed into ...

Embodiment 2

[0029] (1) Select tantalum ingots with a purity greater than 99.999% electron beam melting as raw materials, cut the tantalum ingots into blocks, the size of the blocks is 8mm*10mm, put the tantalum blocks in the hydrogenation furnace, and pump the vacuum to 6.67×10 -3 Pa, then filled with 1atm hydrogen, and then evacuated to 6.67×10 -3 Pa, filled with hydrogen, adjust the pressure in the furnace to 10 -1 Pa level, start heating, the heating rate is 300°C / h, when the temperature reaches 450°C, keep the hydrogen pressure in the furnace at 1atm, continue to heat up, the cut-off temperature is 600°C, stop heating when the pressure in the furnace does not drop anymore, With the furnace cooling, the temperature is lower than 50 ℃ out of the furnace.

[0030] (2) Use a roller crusher to crush the tantalum particles that have been absorbed into -100 mesh powder, and then use a jet mill to crush them into a -200 mesh powder. Put the tantalum hydride powder in a ladle, pump air, let ...

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Abstract

The invention relates to a production method of a high-purity tantalum target material, which comprises the following steps: (1) placing a tantalum block of which the size is 5-10mm*5-10mm in a hydrogenation furnace, and performing hydrogen absorption; and (2) crushing the tantalum subjected to hydrogen absorption into 200-mesh powder, placing in a steel capsule, heating and performing air extraction at certain rates by stages, then placing the steel capsule in a hot isostatic press, sintering under the conditions that the sintering temperature is 1100-1500 DEG C and the atmosphere pressure is 50-200 MPa, and finally machining to cut into a specified shape. According to the invention, a powder metallurgy method is adopted, and specific process conditions are combined, so that the tantalum target material which is uniform in texture distribution, uniform in grain size distribution and small in grain size can be obtained; and the target material has high deposition speed, fine film uniformity and favorable film-forming property, and produces fewer electric arcs and particles. Above all, the method provided by the invention is simple in process and low in cost.

Description

technical field [0001] The invention belongs to the technical field of new materials, and in particular relates to a production method of a high-purity tantalum target. Background technique [0002] Because metal tantalum and tantalum compounds have high conductivity, high thermal stability and barrier effect on foreign atoms. Tantalum and tantalum nitride are inert to copper, and compounds are not formed between Cu and Ta and Cu and N, so tantalum and tantalum-based films are used as a barrier layer to prevent copper diffusion. The typical thickness of the barrier layer is 0.005~0.01μm. In order to prevent Cu atoms from diffusing into the Si matrix, it is very effective to use tantalum base films such as tantalum nitride, tantalum silicide, tantalum carbide, tantalum nitride silicide, and tantalum nitride carbide as barrier layers. Depositing multi-layer tantalum film or multi-layer tantalum-based film has better effect than single-layer tantalum-based film. Sandwich mul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
Inventor 赵珍珍方庆谢玉
Owner 泰安晶品新材料科技有限公司
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