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Phosphate based red phosphor, preparation method and application thereof

A red phosphor, phosphate technology, applied in chemical instruments and methods, luminescent materials, electrical components, etc., can solve the problems of easy-to-corrode LED chips, complex circuit design, harsh preparation conditions, etc., to achieve good output wavelength matching, The effect of easy operation and simple preparation process

Inactive Publication Date: 2014-11-05
CHONGQING GOIUTE NEW MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to obtain stable and efficient white light through this method. It is necessary to consider the driving characteristics of three different color chips, and the circuit design is very complicated.
The second is to use the quantum effect to realize single-chip white light, but the cost is high and the technology is not yet mature.
[0004] Currently, the commercial red phosphor is Europium ion Eu 3+ Activated yttrium oxide Y 2 o 3 :Eu 3+ , although its chromaticity is pure, but the luminous efficiency is low under the excitation of near ultraviolet light or blue light, which can no longer meet the demand for red phosphor powder in the development of LED technology today.
On the other hand, phosphors based on sulfide, oxyfluoride, etc. have high luminous intensity and good color purity, but the synthesis process is more complicated, the preparation conditions are relatively harsh, and the LED chip is easy to corrode, and it is not friendly to the environment.

Method used

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  • Phosphate based red phosphor, preparation method and application thereof
  • Phosphate based red phosphor, preparation method and application thereof
  • Phosphate based red phosphor, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Preparation of Cs 1.9 Eu 0.1 AlP 3 o 10

[0034] According to the chemical formula Cs 1.9 Eu 0.1 AlP 3 o 10 The stoichiometric ratio of each element in the formula, the raw materials were weighed respectively:

[0035] Cesium Carbonate Cs 2 CO 3 : 1.55 g,

[0036] Europium oxide Eu 2 o 3 : 0.09 g,

[0037] Alumina Al 2 o 3 : 0.26 g,

[0038] Ammonium dihydrogen phosphate NH 4 h 2 PO 4 : 1.73 grams;

[0039] After grinding and mixing the raw materials in an agate mortar, pre-sintering is carried out in an air atmosphere. The pre-sintering temperature is 350°C, and the sintering time is 5 hours. After cooling to room temperature, the samples are taken out; the raw materials for the first sintering are fully Mix and grind evenly, carry out the second sintering in the air atmosphere, the sintering temperature is 500°C, the calcination time is 8 hours, cool to room temperature, take out the sample; finally it is fully ground again and put into the muffle ...

Embodiment 2

[0043] Preparation of Cs 1.8 Eu 0.2 GaP 3 o 10

[0044] According to chemical formula Cs 1.8 Eu 0.2 GaP 3 o 10 , respectively weigh cesium carbonate Cs 2 CO 3 : 1.47 g, europium oxide Eu 2 o 3 : 0.18 g, gallium oxide Ga 2 o 3 : 0.47 g, ammonium dihydrogen phosphate NH 4 h 2 PO 4 : 1.73 grams, after grinding and mixing in an agate mortar, select the air atmosphere for pre-sintering, the pre-sintering temperature is 400 ° C, the sintering time is 3 hours, then cool to room temperature, take out the sample; the raw material for the first sintering is again Thoroughly mix and grind evenly, carry out the second sintering in the air atmosphere, the sintering temperature is 450°C, the calcination time is 8 hours, cool to room temperature, take out the sample; finally it is fully ground again and placed in the muffle furnace, in the air It is calcined under atmosphere, the calcining temperature is 800° C., and the calcining time is 12 hours. After cooling, the powdery ...

Embodiment 3

[0049] Preparation of Cs 1.999 Eu 0.001 AlP 3 o 10

[0050] According to the chemical formula Cs 1.999 Eu 0.001 AlP 3 o 10 The stoichiometric ratio of each element in , respectively weigh cesium carbonate Cs 2 CO 3 : 6.51 g, europium oxide Eu 2 o 3 : 0.004 g, aluminum oxide Al 2 o 3 : 1.02 g, ammonium dihydrogen phosphate NH 4 h 2 PO 4 : 1.73 g, after grinding and mixing in an agate mortar, select the air atmosphere for pre-sintering, the pre-sintering temperature is 450 ° C, the sintering time is 8 hours, cool to room temperature, take out the sample; the raw material for the first sintering is again Thoroughly mix and grind evenly, carry out the second sintering in the air atmosphere, the sintering temperature is 500 ° C, the calcination time is 8 hours, then cool to room temperature, take out the sample; finally it is fully ground again and placed in the muffle furnace, in the Calcining under air atmosphere, the calcining temperature is 800°C, the calcining ...

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Abstract

The invention relates to phosphate based red phosphor, as well as a preparation method and application of the phosphate based red phosphor. The chemical formula of the red phosphor is Cs2-xEuxMP3010 (M=Al, Ga), wherein x is not less than 0.001 and not greater than 2.0. The red phosphor which is obtained by replacing Cs+ with Eu<3+> has high luminescent intensity and good color rendering performance, and emits red fluorescence mainly with 614 nanometer wavelength which is well matched with the emission wavelength of a near ultraviolet semiconductor chip, and the excitation wavelength of the phosphor is 250-400 nanometer. The red phosphor provided by the invention is prepared by means of high temperature solid phase method and solution method respectively, production cost and equipment requirements are low, the obtained product is stable in quality, and the preparation method is easy to operate and suitable for industrial production.

Description

technical field [0001] The invention relates to a preparation method and application of a luminescent material, in particular to a high-performance phosphate-based phosphor that emits red fluorescence under the excitation of ultraviolet to blue light, which is coated and packaged on the outside of an InGaN diode to prepare a white LED lighting device , belongs to the technical field of inorganic light-emitting materials. Background technique [0002] As a solid-state light source, semiconductor light-emitting diode (LED) has attracted much attention and has been developed rapidly because of its advantages such as long life, small size, no pollution, fast response speed, and high luminous efficiency. However, in order to meet the requirements of consumers and realize the wide application of semiconductor lighting in the field of general lighting, it is necessary to obtain white LEDs with low production costs, high efficiency, and high color rendering. [0003] There are thre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/81H01L33/50
Inventor 黄彦林关莹秦琳陶正旭
Owner CHONGQING GOIUTE NEW MATERIAL TECH CO LTD