Ionic liquid filled porous silicon optical VOC sensor array and preparation method thereof
An ionic liquid and sensing array technology, which is applied in the direction of material analysis, scientific instruments, phase influence characteristic measurement by optical means, etc., can solve the problems of poor gas response repeatability, difficult to accurately control the preparation process, etc. High speed, enhanced discrimination, optimized selectivity and sensitivity
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Embodiment example 1
[0032] The invention discloses an ionic liquid-filled porous silicon optical VOC sensing array. The array is composed of a plurality of gas sensing units with cross-sensitive response to VOC (ie, volatile organic compounds). The gas sensing units are filled in nanoporous Silicon Photonic Crystals Composed of Ionic Liquid Arrays. The first sensing microarray preparation process is:
[0033] (1) Cover the surface of P-type boron-doped single crystal silicon uniformly with a layer of SU-8 photoresist by using a glue machine, and transfer the microarray design pattern on the photolithography mask to the photoresist layer through the principle of ultraviolet exposure imaging superior;
[0034] (2) Use the P-type boron-doped single crystal silicon of the above-mentioned SU-8 photoresist array as the anode, and the platinum electrode as the cathode, add absolute ethanol at a ratio of 1:3-6 by volume and a concentration of 40% by weight Hydrofluoric acid is used as electrolyte for e...
Embodiment example 2
[0037] A method for preparing an ionic liquid-filled porous silicon optical VOC sensing array, the method comprising the following steps:
[0038] (1) Use p-type boron-doped single crystal silicon as the anode, platinum electrode as the cathode, add absolute ethanol and hydrofluoric acid with a weight concentration of 40% as the electrolyte at a volume ratio of 1:3 to 6, and perform electrolysis For etching, set the fluctuation range of current intensity to 35-100mA, each fluctuation period is 5-9 seconds, and the number of repeated fluctuations is 30-75 times. After etching, clean the silicon wafer with ethanol several times, and then dry it with nitrogen. ; Thermal oxidation treatment or ozone oxidation treatment at 400-600° C. for 1-2 hours on the above-etched silicon wafer to form porous silicon with reflection and light filtering properties on the surface;
[0039] (2) Select PDMS of appropriate size and use a hole punch to prepare multiple hole arrays with a diameter of ...
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