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Black silicon super-hydrophobic material and manufacturing method thereof

A superhydrophobic and black silicon technology, applied in the field of nanomaterials, can solve the problems of high reflectivity infrared non-response restriction development, etc., to achieve the effect of ensuring high-quality operation, simple operation, and simple preparation process

Inactive Publication Date: 2013-11-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high reflectivity and non-responsive defects of silicon materials seriously restrict its development.

Method used

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  • Black silicon super-hydrophobic material and manufacturing method thereof
  • Black silicon super-hydrophobic material and manufacturing method thereof

Examples

Experimental program
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Effect test

example 1

[0052] An N-type (100) single crystal silicon chip with a resistivity of 2-8 ohms (Ohm) is ultrasonically cleaned in trichlorethylene, acetone, and methanol solutions in sequence. After rinsing with deionized water and blowing dry with nitrogen, thermally evaporate the tellurium film in vacuum with an evaporation rate of 2-3nm / s and a thickness of 500nm. Put the coated silicon wafer on the three-dimensional movable target stage in the vacuum chamber, the pressure in the chamber is lower than 10-2mbar, the working gas is air, and the working pressure is 500Torr. The silicon wafer is irradiated with a titanium sapphire femtosecond laser, the wavelength of the light source is 800nm, the pulse width is 180fs, and the pulse frequency is 1kHz. Pulse energy range 0.17-1.69J / cm 2 , at 4×4mm 2 Scan uniformly within the area, and control the number of pulses in the range of 300-3000. After testing, the absorption of black silicon is higher than 85% in the range of 250-400 nm, and hig...

example 2

[0054] Set the size to 23×23mm 2 The N-type (100) single crystal silicon wafer with a resistivity of 2-8 Ohm was cleaned by the standard RCA method (that is, the standard wet chemical cleaning method), and ultrasonic was used for 15 minutes per step. The beakers, graduated cylinders, hydrofluoric acid-resistant tweezers, rubber-tip droppers, etc. used to prepare the solution were ultrasonically cleaned with acetone, ethanol, and deionized water for 15 minutes each. The chemical corrosion solution is configured in a certain proportion, which is composed of hydrogen peroxide, ethanol, deionized water, hydrofluoric acid and chloroauric acid. Before the reaction, place the silicon wafer in 10% hydrofluoric acid solution to remove the natural oxide layer on the surface. During the reaction, the device was placed in a heat-collecting constant temperature magnetic stirrer, the temperature was set at 35° C., and a 2.5 cm magnetic rotor was selected. After testing, the black silicon ...

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Abstract

The embodiment of the invention discloses a method for manufacturing a black silicon super-hydrophobic material. The method includes the steps that a black silicon active region reinforcement absorbing layer is formed on a silicon substrate material by means of a metal auxiliary chemical ion etching method or a femtosecond laser irradiation method; a silicon oxide layer is formed and grows on the surface of the black silicon active region reinforcement absorbing layer; a dichlorodimethylsilane layer is formed on the silicon oxide layer. According to the black silicon super-hydrophobic material, higher light absorptivity is showed compared with traditional crystalline silicon on a near-infrared band; meanwhile, the black silicon super-hydrophobic material has a hydrophobic characteristic, unavoidable dust brought due to time accumulation can be automatically cleaned, snow cover can also be effectively prevented, high-quality operation is guaranteed, and service life is prolonged.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, in particular to a black silicon superhydrophobic material and a manufacturing method thereof. Background technique [0002] Crystalline silicon is one of the most widely used materials in the semiconductor industry today. Its low price and easy integration and compatibility make silicon have a considerable application market. However, the high reflectivity and non-responsive defects of silicon materials seriously restrict its development. [0003] In recent years, many methods have been proposed to solve related problems. Among these research programs, there is no doubt that the research on black silicon is the most. Black silicon is a revolutionary new material in the electronics industry, which has had a profound impact on technologies such as ultraviolet and infrared ultra-sensitive sensors and photovoltaic cells. Especially in today's energy-scarce society, the black silicon materi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352H01L31/028H01L31/0216
CPCY02P70/50
Inventor 李世彬张婷吴志明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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