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Preparation method of La2Zr2O7 buffer layer film

A buffer layer and thin film technology, applied in the coating, metal material coating process, liquid chemical plating and other directions, can solve the problems of high cost of thin film preparation, difficult to obtain, etc., to reduce the coating cycle, reduce industrial costs, and facilitate implementation. Effect

Inactive Publication Date: 2015-06-24
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of this invention is to provide a kind of La 2 Zr 2 o 7 The preparation method of the buffer layer thin film solves the problem that the existing metal-organic deposition and sol-gel use lanthanum acetylacetonate and zirconium acetylacetonate as raw materials, and it is difficult to obtain dense La 2 Zr 2 o 7 Problems with high film and preparation costs

Method used

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  • Preparation method of La2Zr2O7 buffer layer film
  • Preparation method of La2Zr2O7 buffer layer film
  • Preparation method of La2Zr2O7 buffer layer film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Add zirconyl nitrate and acetylacetone to propionic acid solvent (molar ratio zirconyl nitrate: acetylacetone: propionic acid = 1:4:4), reflux and stir at 50°C for 5 hours at a constant temperature, and then cool to room temperature to obtain Zr solution;

[0045] Add lanthanum nitrate to propionic acid solvent (molar ratio lanthanum nitrate:propionic acid=1:4), and stir at room temperature for 2 hours to obtain La solution;

[0046] Using methanol as a diluent, the above-mentioned La solution, Zr solution and methanol solvent were mixed in a molar ratio La: Zr: methanol = 1.3: 1: 20, and stirred at room temperature for 3 hours to obtain La 2 Zr 2 o 7 Precursor solution for buffer layer thin film; preparation of La 2 Zr 2 o 7 The gel film was subsequently dried at 90 °C for 10 min to obtain La 2 Zr 2 o 7 dry film;

[0047] La 2 Zr 2 o 7 The dry film is put into a muffle furnace for heat treatment, and the temperature in the furnace is raised to 900°C at a ra...

Embodiment 2

[0050] Add zirconyl nitrate and acetylacetone to ethylene glycol monomethyl ether solvent (molar ratio zirconyl nitrate: acetylacetone: ethylene glycol monomethyl ether = 1:8:6), and stir under reflux at 80°C for 4 hours , and then cooled to room temperature to obtain a solution of Zr;

[0051] Add lanthanum nitrate to ethylene glycol monomethyl ether solvent (molar ratio of lanthanum nitrate: ethylene glycol monomethyl ether = 1:8), and stir at room temperature for 3 hours to obtain a La solution.

[0052] Using methanol as a diluent, the above-mentioned La solution, Zr solution and methanol solvent were mixed in a molar ratio La: Zr: methanol = 1.2: 1: 30, and stirred at room temperature for 3 hours to obtain La 2 Zr 2 o 7 Precursor solution for buffer layer thin film; La 2 Zr 2 o 7 The gel film was then dried at 80 °C for 20 min to obtain La 2 Zr 2 o 7 dry film;

[0053] La 2 Zr 2 o 7 The dry film was put into a quartz tube sintering furnace for heat treatment. ...

Embodiment 3

[0055] Add zirconium oxychloride and acetylacetone to propionic acid solvent (molar ratio zirconium oxychloride: acetylacetone: propionic acid = 1:4:10), reflux and stir at 40°C for 6 hours, then cool to room temperature , to obtain Zr solution;

[0056] Add lanthanum acetate to propionic acid solvent (molar ratio lanthanum acetate: propionic acid = 1:10), stir at room temperature for 4 hours to obtain La solution;

[0057] Using methanol as a diluent, the above-mentioned La solution, Zr solution and methanol were mixed in a molar ratio La: Zr: methanol = 1: 1: 90, and stirred at room temperature for 5 hours to obtain La 2 Zr 2 o 7 Buffer layer thin film precursor solution; using the dipping and pulling method to prepare La 2 Zr 2 o 7 The gel film was subsequently dried at 100 °C for 5 min to obtain La 2 Zr 2 o 7 dry film;

[0058] La 2 Zr 2 o 7 The dry film is put into a muffle furnace for heat treatment, and the temperature in the furnace is raised to 1050°C at a...

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Abstract

The invention discloses a preparation method of a La2Zr2O7 buffer layer film. The preparation method comprises the following steps: preparing a La2Zr2O7 buffer layer film precursor solution by utilizing inorganic salts of lanthanum and zirconium as raw materials, preparing a gel film on a lanthanum aluminate or strontium titanate single crystal substrate or a nickel-tungsten alloy base band through a dip coating method or a spin coating method, drying the gel film, and finally heat treating the gel film to obtain the textured La2Zr2O7 buffer layer film. According to the preparation method of La2Zr2O7 buffer layer film disclosed by the invention, the small molecule salt such as zirconyl nitrate, lanthanum nitrate, and the like, is used as the raw material to obtain a solution with high concentration, and the La2Zr2O7 buffer layer film with thickness of 100-200 nm can be obtained by a single filming coating-heat treatment procedure, thereby reducing the film coating period and lowering the industrial cost, and the preparation process is simple and easy to implement.

Description

technical field [0001] The invention belongs to the technical field of preparation of high-temperature superconducting thin film buffer layers, and relates to a La 2 Zr 2 o 7 Preparation method of buffer layer film. Background technique [0002] High-temperature superconducting thin films have broad application prospects in the field of power electronics. In the field of power transmission, high-temperature superconducting technology is the only high-tech technology in the 21st century. Used in the field of electronic devices, high-temperature superconducting thin films need to be deposited on such as LaAlO 3 , MgO and other single crystal substrates. In order to obtain high-quality thin films, it is often necessary to 3 , MgO and other substrates to make a transition layer. For the power field, high temperature superconducting coatings, especially YBa 2 Cu 3 o 7-x (YBCO) coated large conductor has the greatest development potential and has more superconducting pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/50C23C18/12
Inventor 张卫华陈源清李蒙娟
Owner XIAN UNIV OF TECH
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