Method for preparing self-sustained silicon nanowire array

Abstract

The invention discloses a method for preparing a self-sustained silicon nanowire array and belongs to the technical field of the preparation of nanometer materials. The method comprises the steps of: fixing a silicon-containing material via metal nets and metal wires to form an electrode covered by the metal nets, then putting the electrode into molten salt at a temperature of 600-1100 DEG C, and exerting a 1.7-2.5V bath voltage onto the electrode which is a carbon-containing electrode for deoxidization in inert atmosphere or under vacuum; reacting and then taking out the electrode, cleaning and peeling to acquire the self-sustained silicon nanowire array. The length of the self-sustained silicon nanowire array can be adjusted through the thickness of the selected material and the reaction time. The nanowire array is formed by crystalline silicon nanowires, and particularly, the nanowires are transversely connected and have a definite range of strength and the structure can remain stable without being supported by any carrier. By adopting the method disclosed by the invention, the self-sustained silicon nanowire array can be rapidly prepared with low cost, and the length of the self-sustained silicon nanowire array can be adjusted. Thus, the method disclosed by the invention is suitable for mass production.

Description

technical field [0001] The invention relates to a preparation method of a self-sustaining silicon nanowire array, belonging to the technical field of nanometer materials. Background technique [0002] Silicon nanowire array materials, due to their unique structure and physical properties, have very broad application prospects in the fields of signal sensors, biological detection templates, catalysis / electrocatalysis, photoelectric physical devices, solar cells, and lithium-ion battery anodes. At present, most of the methods for preparing silicon nanowire arrays are based on electroless etching of silicon wafers, and some also rely on templates. These methods use silicon wafers, toxic and corrosive chemicals and precious metals, and are costly. Moreover, the prepared silicon nanowire array cannot be self-supporting and needs to be grown on a substrate, otherwise it cannot be an array. These limit the large-scale preparation and application of silicon nanowire arrays. For e...

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Problems solved by technology

CN 101736354A reported the use of molten salt electrochemical method by SiO 2 Materials such as silicon nanoparticles and one-dimensional silicon nanowires can be prepared, but two-dimensional silicon nanowire arrays have not been obtained

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