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Porous silicon material, preparation method and application thereof

A technology of porous silicon and raw materials, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of complex preparation process, impossibility of industrial production, high equipment requirements, etc., achieve green and clean preparation, avoid toxic solvents or precious metal catalysts The effect of using and prolonging the reaction time

Active Publication Date: 2014-02-19
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] These preparation methods reported above generally have high cost of raw materials, complex preparation process, high equipment requirements, harsh process conditions, serious pollution (a large amount of HF or by-products), use of noble metal catalysts (such as gold, silver, etc.), difficulties in mass production, etc. Problems, or the performance cannot meet commercial needs, and cannot be industrialized

Method used

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  • Porous silicon material, preparation method and application thereof
  • Porous silicon material, preparation method and application thereof
  • Porous silicon material, preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0050] Disperse commercially purchased silicon wafers, 0.5mmol manganese acetate, 0.5mmol cobalt acetate, 2.0mmol ferric chloride and 15mmol sodium acetate in 80ml of ethylene glycol solution, then put them into a polytetrafluoroethylene-lined reactor, at 200°C , after 48 hours of reaction, cooled to room temperature, the Mn produced during the reaction 0.5 co 0.5 Fe 2 o 4 The powder can be recycled after being separated from ethylene glycol. After the reaction, the silicon chip containing the transition metal oxide catalyst was washed 5 times with deionized water, ultrasonically treated in hydrochloric acid at 90°C for 2 hours to remove the catalyst on the surface of the silicon chip, washed 5 times repeatedly with deionized water, and then placed in The reaction was stirred in sodium hydroxide solution for 24 hours to remove the silicon dioxide on the surface of the porous silicon, washed repeatedly with deionized water for 5 times, and dried in a vacuum oven at 80°C for ...

Embodiment 2

[0057] Disperse commercially purchased silicon wafers, 0.4mmol zinc acetate, 1.6mmol cobalt acetate, 4.0mmol ferric chloride and 10mmol sodium acetate in 80ml of ethylene glycol solution, then put them into a polytetrafluoroethylene-lined reactor, at 200°C , after 62 hours of reaction, cooled to room temperature, the Zn generated during the reaction 0.2 co 0.8 Fe 2 o 4 The powder can be recycled after being separated from ethylene glycol. After the reaction, the silicon chip containing the transition metal oxide catalyst was washed 5 times with deionized water, ultrasonically treated in hydrochloric acid at 90°C for 2 hours to remove the catalyst on the surface of the silicon chip, washed 5 times repeatedly with deionized water, and then placed in The reaction was stirred in sodium hydroxide solution for 24 hours to remove the silicon dioxide on the surface of the porous silicon, washed repeatedly with deionized water for 5 times, and dried in a vacuum oven at 80°C for 24 h...

Embodiment 3

[0061] Commercially purchased silicon wafers, 2.0mmol cobalt acetate, 4.0mmol ferric chloride and 12mmol sodium acetate were dispersed in a mixture solution of 60ml ethylene glycol and 20ml ethanol, then loaded into a polytetrafluoroethylene-lined reactor, at a temperature of 250°C, After reacting for 80 hours, cool to room temperature, the CoFe generated in the reaction process 2 o 4 The powder can be recycled after being separated from ethylene glycol and ethanol. After the reaction, the silicon chip containing the transition metal oxide catalyst was washed 5 times with deionized water, ultrasonically treated in hydrochloric acid at 90°C for 2 hours to remove the catalyst on the surface of the silicon chip, washed 5 times repeatedly with deionized water, and then placed in The reaction was stirred in sodium hydroxide solution for 24 hours to remove the silicon dioxide on the surface of the porous silicon, washed repeatedly with deionized water for 5 times, and dried in a va...

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Abstract

The invention discloses a porous silicon material and its preparation method. The preparation method of the porous silicon material includes: letting a transition metal salt precursor and raw material silicon undergo an in situ catalytic reaction in an organic solvent under certain temperature and pressure and the action of a mineralizing agent, and carrying out pickling and other post-treatment impurity removal processes, thus obtaining the porous silicon material. By adjusting the variety and concentration of the transition metal salt precursor, the organic solvent variety and reaction condition parameters, the pore size, distribution and porosity of the silicon material can be regulated. By means of the method provided by the invention, the porous silicon material that is difficult to obtain by the prior art can be obtained. The porous silicon material prepared by the method has the characteristics of low production cost and simple process, can be prepared in large scale, is suitable for industrial production, and has wide application prospects.

Description

technical field [0001] The present invention relates to the field of preparation of porous silicon materials. Specifically, the present invention relates to a method for preparing porous silicon materials through the in-situ catalytic reaction of silicon in an organic solvent with a transition metal salt precursor under the action of a certain temperature and pressure and a mineralizer, and Porous silicon material obtained by this method and its use. Background technique [0002] Porous silicon is a new multifunctional porous material with a pore size ranging from nanometers to millimeters. It has unique dielectric properties, optical properties, microelectronic compatibility, large specific surface area and pore controllability, making it suitable for sensitive components and It has a wide range of applications in the fields of sensors, lighting materials, optoelectronic devices, biological analysis, immunoassays, insulating materials, integrated circuits, solar cells, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021
Inventor 苏发兵张在磊王艳红翟世辉
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
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