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Preparation method for polysilicon thin film with bridged crystal-grain structure

A technology of polysilicon film and bridging crystal grains, which is applied in chemical instruments and methods, crystal growth, semiconductor/solid-state device manufacturing, etc., can solve the problems of discrete distribution of electrical characteristics, non-uniform brightness, and uneven electrical characteristics

Inactive Publication Date: 2014-04-30
GUANGDONG SINODISPLAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The distribution of grains is random, making the electrical characteristics of the TFT across the substrate non-uniform
It is this discrete distribution of electrical characteristics that causes defects such as mura and non-uniform brightness in the final display

Method used

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  • Preparation method for polysilicon thin film with bridged crystal-grain structure
  • Preparation method for polysilicon thin film with bridged crystal-grain structure
  • Preparation method for polysilicon thin film with bridged crystal-grain structure

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Embodiment 1

[0045] This embodiment provides a method for forming a polysilicon film with bridging grain (BG) lines, including:

[0046] 1) A layer of PR 1075 photoresist is spin-coated on the surface of the polysilicon film. After the PR photoresist is spin-coated, the sample is heated to 90 degrees for soft baking. The heating time is 1 minute. The purpose of soft baking is to reduce the amount of photoresist. Solvent, from ~20% to ~5%, release the stress that induces the spin-coated film at the same time, after soft baking, use ASM PAS5000 stepper photolithography machine to expose the photoresist under the light with a wavelength of 365nm, bake at 110C for 1 Minutes later, the sample was soaked in FHD-5 for 30 seconds for developing treatment. The photoresist exposed to the light was dissolved in the solution, and the part that was not exposed to the light remained as it was, so that the BG line pattern was transferred to the photolithography Glue (such as image 3 shown), forming a B...

Embodiment 2

[0053] BG line patterning can also be achieved using laser interference lithography (LIL), which is easily realized on large-area substrates without the need for a mask. Laser interference lithography (LIL) is the method of choice for fabricating periodic and quasi-periodic patterns on a large area substrate.

[0054] Use based on Figure 5 The Lloyd Interferometry device is shown. The regular pattern is formed by interfering laser beams and reflected laser beams. Since the second laser beam is formed by a mirror very close to the substrate, this setup is less sensitive to vibrations than a true two-beam interference setup. The period of the interference pattern, as well as the resist grating recording on the substrate, is determined by the formula P=λ / (2sinθ). Using a 363.8nm light source, the period from 300nm to 1000nm can be easily adjusted.

[0055] This embodiment provides a method for forming a polysilicon film with bridging grain (BG) lines, including:

[0056] 1)...

Embodiment 3

[0064] Another way to achieve small-sized BG line patterns is nanoimprint lithography (NIL) technology. NIL is a simple photolithographic process with low cost, high volume production and high resolution. It is patterned by mechanical deformation of imprints on resist and subsequent processes. Resist imprints are usually printed from a monomeric or polymeric formulation in a thermal or UV curing process.

[0065] The principle of NIL is as follows Figure 9 As shown, a hard mold with a nanoscale undulating surface is pressed into a polymer material on a substrate, thereby forming a thickness contrast of high and low undulations on the polymer material. The thin residual layer of polymer material is intentionally left under the protruding part of the mold as a soft buffer layer to prevent the hard mold from directly affecting the substrate, and also effectively protect the delicate nanoscale undulating shape of the mold surface and the surface of the device . After NIL trea...

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Abstract

The invention provides a preparation method for a polysilicon thin film with a bridged crystal-grain structure. The method includes: 1) performing spin coating of a photoresist on the surface of the polysilicon thin film; 2) performing soft baking and then using a photoetching machine to expose the photoresist; 3) performing imaging processing and forming a plurality of strip-shaped grooves in the photoresist, the period being 0.5-1 mum; 4) performing hard baking and then doping through ion injection.

Description

technical field [0001] The present invention relates to polysilicon technology, and more specifically relates to a crystal grain polysilicon thin film technology. Background technique [0002] In the field of traditional active matrix display, TFT is usually made of amorphous silicon (a-Si) material. This is mainly due to its low processing temperature and low manufacturing cost on large-area glass substrates. More recently polysilicon is used in high resolution liquid crystal displays (LCDs) and active organic electroluminescent displays (AMOLEDs). Polysilicon also has the advantage of integrating circuits on glass substrates. In addition, polysilicon has the possibility of a larger pixel aperture ratio, improving light energy utilization efficiency and reducing power consumption in LC and bottom-emitting OLED displays. It is well known that polysilicon TFTs are more suitable for driving OLED pixels, not only because OLEDs are current-driven devices, and a-Si TFTs have l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/20C30B31/22
CPCH01L21/02532H01L21/02595
Inventor 赵淑云郭海成王文
Owner GUANGDONG SINODISPLAY TECH
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