Silicon carbide/tungsten boride composite material and preparation method thereof

A technology of composite materials and silicon carbide, which is applied in the field of ceramic matrix composite materials, can solve the problems that the advantages of silicon carbide and tungsten boride cannot be fully utilized, the synthesis of single-phase tungsten boride is difficult, and the single-phase silicon carbide is difficult to densify. Achieve high strength, good conductivity, and low cost

Inactive Publication Date: 2014-05-07
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The purpose of the present invention is to provide a silicon carbide / tungsten boride composite material with good mechanical properties, easy control of preparation process conditions, simple operation and low cost and its preparation method, to solve the problem of single-phase silicon carbide which is difficult to densify, difficult to form, conductive Poor properties and difficulties in the synthesis of single-phase tungsten boride lead to problems such as the inability to give full play to the advantages of silicon carbide and tungsten boride

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  • Silicon carbide/tungsten boride composite material and preparation method thereof
  • Silicon carbide/tungsten boride composite material and preparation method thereof

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preparation example Construction

[0024] The preparation method of the silicon carbide / tungsten boride composite material adopts tungsten carbide WC powder, boron carbide B 4 C powder and silicon Si powder, or tungsten carbide WC powder, boron carbide B 4 C powder, silicon Si powder and silicon carbide SiC powder, tungsten diboron five W 2 B 5 One or two kinds of powder are raw materials, of which WC: B 4 C: The molar ratio of Si is 8:5:13; the raw material powder is mixed by physical and mechanical methods for 8-24 hours, put into graphite mold and cold-pressed, the applied pressure is 10-20MPa, and the time is 5-20 minutes; Sintering in a hot press furnace with an inert gas protective atmosphere, the heating rate is 1-20°C / min, the sintering temperature is 1600-2000°C, the sintering time is 0.5-3 hours, and the sintering pressure is 10-300MPa. The chemical reaction of raw material powder in situ hot pressing is as follows:

[0025] 8WC+5B 4 C+13Si→13SiC+4W 2 B 5 .

[0026] Among them, the particle si...

Embodiment 1

[0033] 35.5 grams of tungsten carbide powder with a particle size of 0.5 microns, 6.2 grams of boron carbide powder with a particle size of 0.5 microns, and 8.3 grams of silicon powder with a particle size of 200 mesh were ball-milled in a polyurethane ball mill tank for 24 hours, and then cold-pressed into a graphite mold for molding. The pressure is 20MPa; then, hot isostatic pressing is carried out at a heating rate of 20°C / min, heated to 1600°C and kept for 3 hours, while the pressure is gradually increased to 300MPa. The whole sintering process is carried out under the protection of argon. The obtained reaction product was subjected to XRD analysis, and it can be found that the prepared composite material is only composed of SiC and W 2 B 5 Composed of two phases, the molar ratio of silicon carbide to tungsten diboron five in the composite material is 13:4, and the grain size of silicon carbide is 1 micron. Lath-like W in the prepared composite 2 B 5 The grains are mo...

Embodiment 2

[0035] 35.5 grams of tungsten carbide powder with a particle size of 2 microns, 6.2 grams of boron carbide powder with a particle size of 5 microns, and 8.3 grams of silicon powder with a particle size of 300 mesh were ball milled in a polyurethane ball mill tank for 24 hours, and then cold-pressed into a graphite mold for molding. The pressure is 20MPa; then, put it into a hot-press furnace for hot-press sintering, the heating rate is 10°C / min, heat to 1900°C for 1 hour, and at the same time, gradually increase the pressure to 40MPa. The whole sintering process is carried out under the protection of argon (or helium). The obtained reaction product is carried out XRD analysis (see figure 1 ), it can be found that the prepared composite is only composed of SiC and W 2 B 5 Two-phase composition. The molar ratio of silicon carbide to tungsten diboron five in the composite material is 13:4, and the grain size of silicon carbide is 2 microns. Lath-like W in the prepared composi...

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Abstract

The invention relates to the field of ceramic matrix composite materials and specifically relates to a silicon carbide/tungsten boride composite material and a preparation method thereof. The composite material is composed of a ditungsten pentaboride reinforced phase and a silicon carbide matrix, wherein the ditungsten pentaboride reinforced phase is evenly dispersed in the silicon carbide matrix. The preparation method comprises the steps: with tungsten carbide powder, boron carbide powder and silicon powder, or tungsten carbide powder, boron carbide powder, silicon powder, and one or two of silicon carbide powder and ditungsten pentaboride powder as raw materials, mixing by a physical mechanical method for 8-24 hours, and putting the mixture in a graphite mold for cold press molding with the applied pressure ranging from 10MPa to 20MPa, and sintering in a hot-pressing furnace with the protective atmosphere of an inert gas at a temperature rise rate of 1-20 DEG C/minute and at 1600-2000 DEG C for 0.5-3 hours under the sintering pressure ranging of 10-300MPa. The method is capable of preparing the silicon carbide/tungsten boride composite material through in-situ synthesis, and the synthesized silicon carbide/tungsten boride composite material has the optimal properties of hardness of 30GPa, bending strength of 900MPa, breaking tenacity of 6.1MPA.m<1/2>, and electrical conductivity of 6*10<5> ohm<-1>m<-1>.

Description

technical field [0001] The invention relates to the field of ceramic-based composite materials, in particular to a silicon carbide / tungsten boride composite material and a preparation method thereof. 2 B 5 ) reinforced silicon carbide (SiC) matrix composites. Background technique [0002] Silicon carbide (SiC) is a refractory non-oxide ceramic that was studied earlier and widely used. SiC has excellent high temperature strength, excellent heat resistance, wear resistance, chemical stability and semiconductor characteristics, so it has broad application prospects in many fields such as atomic energy, gas turbine, aerospace, machinery, chemical industry and electronic technology. However, pure SiC is extremely difficult to densify. Document 1: JS Nadeau, Am.Ceram.Soc.Bull.52, 70 (1973), reported that the hot pressing of pure SiC powder needs to be at 2500°C and 50MPa under high temperature and high pressure to obtain close Sintered body of theoretical density. Such a high ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/58C04B35/622
Inventor 陈继新赵国瑞孙连东苗磊李美栓周延春
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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