Method for preparing CuInxGaySez prefabricated layer by electrochemical deposition

Abstract

The invention belongs to the technical field of solar cells and particularly relates to a method for preparing a CuInxGaySez prefabricated layer by electrochemical deposition. The method comprises steps: in an electrical deposition solution, current pulse or voltage pulse is adopted to obtain a CuInxGaySez prefabricated layer on a cathode substrate through electrical deposition, and the current pulse or the voltage pulse comprises a positive pulse period when the current and the voltage are negative values on the deposition surface and a reverse pulse period when the current and the voltage are positive values on the deposition surface. According to the method, a reverse pulse method is used during the electrical deposition process, part of selenium is stripped back in an electroplating solution while the CuInxGaySez prefabricated layer is formed, generation of selenium balls is avoided, and thus the CuInxGaySez prefabricated layer which is uniform in compositions and stable in phase is formed.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a method for preparing a copper indium gallium selenide prefabricated layer by electrochemical deposition. Background technique [0002] With the continuous increase of human energy consumption, the depletion of non-renewable energy sources such as fossil fuels has become an urgent problem to be solved. The total consumption of fossil energy will reach an inflection point around 2030, and the proportion of renewable energy will continue to rise. Among them, the proportion of solar energy in the future energy structure will increase. It is conservatively estimated that this proportion will exceed 60% in 2100. Solar energy is the most abundant energy among many renewable energy sources. The energy of global sunlight for one hour is equivalent to the energy consumption of the earth for a year, which is much higher than wind energy, geothermal energy, hydropower, ocean energy, ...

AI Technical Summary

Problems solved by technology

The above two methods use pulse waves, although to some extent alleviate the problems of few controllable parameters of constant potential electrodeposition, serious hydrogen evolution reaction, and high film porosity; Due to the potential difference, the four elements cannot be co-deposited synchronously, especially the deposition rate of Se is fast, and a CIGS film with a suitable stoichiometric ratio cannot be obtained, and some pure selenium spheres (such as attached figure 1 sphere in

These selenium balls will affect the formation of CIGS crystals and also cause small voids in the CIGS layer after annealing

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