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Microwave rapid sintering method for high-quality aluminum nitride ceramic substrates

An aluminum nitride ceramic and rapid sintering technology, which is applied in the sintering field of inorganic non-metallic material aluminum nitride ceramics, can solve the problem that the quality of aluminum nitride ceramic substrates cannot be guaranteed, the cost of aluminum nitride ceramic substrates is high, and it is difficult to adapt to the market. Competition and other problems, to achieve the effect of improving the sintering environment, long sintering time and simple structure

Inactive Publication Date: 2014-06-25
XINHUA TIANHE MATERIAL TECH CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

The equipment cost of hot pressing sintering is high and the amount of one-time sintering is small, the sintering cycle is long and the sintering loss is large, resulting in high cost of aluminum nitride ceramic substrates, which is difficult to adapt to the fierce market competition
The equipment required for atmospheric pressure sintering is relatively simple and the production cost is low, but the sintering temperature is high, easy to deform, and difficult to densify, resulting in the quality of aluminum nitride ceramic substrates cannot be guaranteed

Method used

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  • Microwave rapid sintering method for high-quality aluminum nitride ceramic substrates

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Embodiment 1

[0014] The aluminum nitride ceramic substrate green body 1 after debinding is put into the auxiliary heat preservation structure in the microwave sintering cavity, stacked neatly, and the boron nitride powder is evenly sprinkled between the sheets, and the aluminum nitride ceramic substrate The size of green body 1 is 150mm×150mm×3mm, and the microwave sintering cavity is a spherical cavity, which rotates at a constant speed of 30 rpm. The auxiliary thermal insulation structure is composed of alumina fiber board 2, boron nitride sagger 3 and high-purity graphite board 4, such as figure 1 As shown, the inner size of the boron nitride sagger 3 is 180 mm × 180 mm × 100 mm, the size of the high-purity graphite plate 4 is 150 mm × 150 mm × 8 mm, the distance between the upper and lower graphite plates is 75 mm, and the upper graphite plate is directly pressed on the nitriding plate. On the green body 1 of the aluminum ceramic substrate. The frequency of microwave sintering is 2.45...

Embodiment 2

[0016] The aluminum nitride ceramic substrate green body 1 after debinding is put into the auxiliary heat preservation structure in the microwave sintering cavity, stacked neatly, and the boron nitride powder is evenly sprinkled between the sheets, and the aluminum nitride ceramic substrate The size of the green body is Φ80mm×2mm, and the microwave sintering cavity is a cylindrical cavity, which rotates at a constant speed of 30 rpm. The auxiliary thermal insulation structure is composed of alumina fiber board 2, boron nitride sagger 3 and high-purity graphite board 4, such as figure 1 As shown, the inner size of the boron nitride sagger 3 is Φ100mm×60mm, the size of the high-purity graphite plate 4 is Φ80mm×5mm, the distance between the upper and lower graphite plates is 40mm, and the upper graphite plate is directly pressed on the aluminum nitride ceramic substrate On the green body. The frequency of microwave sintering is 2.45GHz, a nitrogen atmosphere containing 6% hydrog...

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Abstract

The invention discloses a microwave rapid sintering method for high-quality aluminum nitride ceramic substrates. The method belongs to microwave firing of ceramic materials and comprises the following steps: after discharging glue, putting aluminum nitride ceramic substrate blanks into an auxiliary heating insulation structure in a microwave sintering cavity, uniformly spraying boron nitride powder among the blanks, wherein the aluminum nitride ceramic substrate blanks are overlapped orderly and the auxiliary heating insulation structure comprises an aluminum nitride fiber plate, a boron nitride sagger and a high-purity graphite plate; sintering in a nitride atmosphere containing 6-10% of hydrogen under the conditions that the microwave sintering frequency is 2.45GHz, the normal-pressure microwave sintering temperature is 1700-1750 DEG C and the heating rate is 8-10 DEG C per minute; preserving the heat for two hours, cooling along with a furnace, opening the furnace and taking out the aluminum nitride ceramic substrate blanks when the temperature is below 400 DEG C, thus obtaining high-quality aluminum nitride ceramic substrate sintering bodies which are small in deformation and has a heat conductivity being greater than 150W / (m K). Different from a conventional methods adopting a convection, conduction or radiation heating manner, the method adopts a heating manner that the microwave with a special waveband is used to be coupled with basic structures of the materials so as to generate heat and the materials are heated completely by adopting medium loss of the materials; and in combination with special microwave sintering structures and sintering process, the method is capable of rapidly and uniformly sintering the materials and has the advantages of low sintering temperature, short time, low energy consumption, high quality and high efficiency.

Description

technical field [0001] The invention relates to a sintering method of an inorganic non-metal material aluminum nitride ceramic, in particular to a microwave rapid sintering method of a high-quality aluminum nitride ceramic substrate. Background technique [0002] Aluminum nitride ceramics is a new type of ceramic material developed in recent years. Due to its high thermal conductivity and good insulation performance, it has been widely used in many fields. Its excellent thermal and mechanical properties make it suitable for high power Packaging and multi-chip assembly and other fields are used as high heat dissipation substrates, which have a great tendency to replace beryllium oxide, silicon carbide and aluminum oxide, and have broad application prospects in the fields of microelectronics, optoelectronics, power electronics and power electronics. From the perspective of market growth rate, it is one of the fastest growing ceramic materials in the current market. According t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/64C04B35/581
Inventor 杨润华曾小峰张弓
Owner XINHUA TIANHE MATERIAL TECH CO LTD
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