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Preparation method of hexagonal boron nitride

A technology of hexagonal boron nitride and boron source, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of complex production process, impure products, unfavorable industrialization, etc., and achieve simple process and low energy consumption. , the effect of low production cost

Active Publication Date: 2014-07-09
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] It is known that there are many methods for synthesizing hexagonal boron nitride materials, but there are several defects in the methods that are unfavorable to industrialization:
[0004] (1) Ultra-high temperature (above 1000°C) increases energy waste and industrial cost;
[0005] (2) The introduction of impurities makes the product impure, requiring cumbersome follow-up pickling, washing, filtering and drying processes, which will lead to complicated production processes

Method used

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  • Preparation method of hexagonal boron nitride
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  • Preparation method of hexagonal boron nitride

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preparation example Construction

[0025] see figure 1 , The method for preparing hexagonal boron nitride according to one embodiment includes the following steps s110 to s130.

[0026] Step s110: Mix the boron source and the nitrogen source evenly to obtain a mixture of the boron source and the nitrogen source, wherein the boron source is boric acid, metaboric acid or boron oxide, and the nitrogen source is melamine, ammonium chloride, ammonium bromide or urea.

[0027] The above-mentioned boron source and nitrogen source are easily decomposed substances, so that the subsequent reaction does not need to be carried out at high temperature, and after the boron source and nitrogen source are decomposed, the boron element and nitrogen element react to form boron nitride, and there are few impurities remaining. Moreover, the price of the above-mentioned boron source and nitrogen source is relatively low, which is beneficial to reduce the preparation cost of hexagonal boron nitride.

[0028] Preferably, the molar r...

Embodiment 1

[0045] Preparation of hexagonal boron nitride

[0046] 1. Ingredients: Use an electronic balance to weigh 5g of boric acid and 20g of melamine respectively, dry the boric acid and melamine at 80°C for 24 hours, and set aside;

[0047] 2. Mixing: Using solid phase grinding, fully mix boric acid and melamine to obtain a mixture of boron source and nitrogen source, and put the mixture of boron source and nitrogen source into the crucible;

[0048] 3. Reaction process: place the crucible in a tube furnace and set the parameters of the tube furnace. Under an argon atmosphere, raise the temperature to 600°C at a rate of 8°C / min and keep it at 600°C for 12 hours. , and then grind to obtain hexagonal boron nitride.

[0049] Depend on Figure 2 to Figure 5 It can be seen that the hexagonal boron nitride powder prepared in Example 1 is composed of flakes of about 1-3 microns and small nanoscale particles.

[0050] Depend on Figure 6 and Figure 7 It can be seen that compared with ...

Embodiment 2

[0053] Preparation of hexagonal boron nitride

[0054] 1. Ingredients: Use an electronic balance to weigh 3g of metaboric acid and 8g of urea, respectively, dry metaboric acid and urea at 90°C for 24 hours, and set aside;

[0055] 2. Mixing: Mix metaboric acid and urea, add 20ml of water, stir well for 2 hours, then dry to obtain a mixture of metaboric acid and urea, and put the mixture of metaboric acid and urea into a crucible;

[0056] 3. Reaction process: place the crucible in a tube furnace and set the parameters of the tube furnace. Under an argon atmosphere, raise the temperature to 800°C at a rate of 8°C / min and keep it at 800°C for 9 hours , and then grind to obtain hexagonal boron nitride.

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Abstract

The invention relates to a preparation method of hexagonal boron nitride. The method comprises the following steps: uniformly mixing a boron source and a nitrogen source to obtain a mixture of the boron source and the nitrogen source, wherein the boron source is boric acid, metaboric acid or boric oxide and the nitrogen source is tripolycyanamide, ammonium chloride, ammonium bromide or urea; under a protective gas atmosphere, heating the mixture to 500-900 DEG C, and insulating for 5-20 hours at 500-900 DEG C; and grinding the insulated mixture to obtain the hexagonal boron nitride. The boron source and the nitrogen source used by the preparation method of hexagonal boron nitride are materials easy to decompose and less in residue, so that metal impure particles by using metal boride are avoided and the subsequent tedious pickling and washing steps are avoided. The method is simple in process, and hexagonal boron nitride after reaction can be used after being grinded. Reaction is not carried out at high temperatures, so that the energy consumption is low and the production is low.

Description

technical field [0001] The invention relates to the technical field of preparation of functional materials, in particular to a preparation method of hexagonal boron nitride. Background technique [0002] Hexagonal boron nitride is an inorganic material with a graphite-like structure. Due to its high temperature resistance, high thermal conductivity, radiation resistance, corrosion resistance, high temperature lubrication and excellent low dielectric and insulation properties, it is used in various important fields, such as electronic packaging. Industrial, aerospace, national defense and nuclear industries all have good applications. High-purity micron-sized hexagonal boron nitride powder has great application prospects, especially in the preparation of high thermal conductivity insulating composite materials, low thermal expansion coefficient underfill composite materials and low dielectric electronic substrate materials. [0003] It is known that there are many methods fo...

Claims

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Application Information

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IPC IPC(8): C01B21/064
Inventor 孙蓉黄良朱朋莉
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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