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Method for preparing transparent conductive FTO/Ag/FTO composite film

A transparent conductive and composite film technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of high cost of gold and platinum, difficulty in obtaining low resistivity FTO film, etc., and achieve the reduction of film resistance , good application prospects, simple preparation process

Inactive Publication Date: 2014-08-20
TIANJIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to obtain FTO films with low resistivity when prepared at low temperature without heat treatment.
[0004] Ultra-thin conductive metal layers can also be used as transparent conductive films, but currently only noble metals such as gold, silver and platinum with low resistivity and good chemical stability can be used, but the high cost of gold and platinum limits their application

Method used

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  • Method for preparing transparent conductive FTO/Ag/FTO composite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Prepare SnO by standard isostatic solid-state reaction synthesis process 1.92 f 0.16 target. Press SnO with an electronic balance 1.92 f 0.16 The stoichiometric ratio of the corresponding elements weighed SnO 2 and SnF 2 The powder raw material has a purity of 99.9%. After fully mixing, pre-press molding (50MPa), then use cold isostatic pressing (200MPa), and finally place in an electric furnace and gradually raise the temperature to 200°C for 10 hours, then gradually raise the temperature to 1000°C for 2 hours, and fire FTO target.

[0028] (2) Put the FTO target material and the Ag target material together into the vacuum chamber;

[0029] Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber; the distance between the FTO target and the quartz substrate was 60 mm.

[0030] (3) Pump the background vacuum of the magnetron sputtering system to 1...

Embodiment 2

[0037] (1) Prepare SnO by standard isostatic solid-state reaction synthesis process 1.92 f 0.16 target. Press SnO with an electronic balance 1.92 f 0.16 The stoichiometric ratio of the corresponding elements weighed SnO 2 and SnF 2 The powder raw material has a purity of 99.9%. After fully mixing, pre-press molding (50MPa), then use cold isostatic pressing (200MPa), and finally place in an electric furnace and gradually raise the temperature to 200°C for 10 hours, then gradually raise the temperature to 1000°C for 2 hours, and fire FTO target.

[0038] (2) Put the FTO target material and the Ag target material together into the vacuum chamber;

[0039] Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber; the distance between the FTO target and the quartz substrate was 60 mm.

[0040] (3) Pump the background vacuum of the magnetron sputtering system to 1...

Embodiment 3

[0045] (1) Prepare SnO by standard isostatic solid-state reaction synthesis process 1.92 f 0.16 target. Press SnO with an electronic balance 1.92 f 0.16 The stoichiometric ratio of the corresponding elements weighed SnO 2 and SnF 2 The powder raw material has a purity of 99.9%. After fully mixing, pre-press molding (50MPa), then use cold isostatic pressing (200MPa), and finally put it in an electric furnace and gradually raise the temperature to 200°C for 10 hours, then gradually raise the temperature to 1000°C for 2 hours, and fire FTO target.

[0046] (2) Put the FTO target material and the Ag target material into the vacuum chamber together.

[0047] Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the FTO target and the quartz substrate was 60 mm.

[0048] (3) Pump the background vacuum of the magnetron sputtering system to ...

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Abstract

The invention discloses a method for preparing a transparent conductive FTO / Ag / FTO composite film. The method comprises the following steps: firstly, preparing a FTO target by adopting an isostatic pressing solid-phase reaction synthetic process, wherein the chemical formula is SnO2-0.5xFx; x is smaller than or equal to 0.3 and greater than or equal to 0.04; alternately sputtering by adopting a magnetron sputtering method, and limiting the layer thickness, so as to prepare a FTO / Ag / FTO composite film (the bottom layer is an FTO film, the middle layer is an Ag film, and the top layer is an FTO film) with a 'sandwich structure', so that the film resistance is reduced to the maximal extent, and meanwhile, high transmittance of a visible light zone is kept. The method is low in cost, simple in process, excellent in electrical properties, and applicable to industrial production, and has a good application prospect.

Description

technical field [0001] The invention belongs to the field of functional thin film materials and thin film optics, in particular to a preparation method of a transparent conductive FTO / Ag / FTO composite thin film. Background technique [0002] Transparent conductive oxide (TCO) film is widely used in antistatic coatings, touch screens, solar cells, flat panel displays, heaters, anti-icing devices, optical coatings and transparent Optoelectronics and other aspects have broad development prospects. Although ITO film is currently the most widely used transparent conductive film material with excellent comprehensive photoelectric properties, indium is toxic, expensive, poor in stability, and easy to be reduced in a hydrogen plasma atmosphere. People are trying to find a low-cost It is an ITO replacement material with excellent performance. Among them, fluorine-doped tin dioxide (F-doped SnO 2 , referred to as FTO film) has the characteristics of cheap materials, non-toxic, elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54C23C14/08C23C14/18
Inventor 李玲霞于仕辉董和磊许丹金雨馨
Owner TIANJIN UNIV