A kind of preparation method of high tuning ratio bmnt film material

Abstract

The invention discloses a preparation method of a high tuning rate BMNT thin film material: firstly, Bi 2 o 3 ,MgO,Nb 2 o 5 and TiO 2 , using the traditional solid-state reaction method to prepare Bi 1.5 Mg 0.5 Nb 0.5 Ti 1.5 o 7 Abbreviated as BMNT ceramic target; then prepare a BMNT film with a thickness of 100-300nm by magnetron sputtering; then anneal in an atmosphere furnace at 700°C, and finally prepare a metal electrode on the BMNT film. The present invention optimizes the tunability of the bismuth-based film by doping titanium ions into the bismuth-based material. Under the driving voltage of 1MV / cm, its tuning rate reaches 35%, which is better than that of the BMN film under the same conditions (25 %), the dielectric tuning rate has been significantly improved.

Description

technical field

[0001] The invention belongs to the field of electronic information materials and components, and in particular relates to a preparation method of a high tuning rate BMNT thin film material. Background technique

[0002] With the rapid development of microwave communication systems, people put forward higher requirements for microwave devices, especially microwave tuning devices. Microwave tuning devices with fast response speed, small size, wide frequency band, high sensitivity and low operating voltage are indispensable components of current and next-generation communication systems. These requirements have brought great challenges to current electronic materials and components. Microwave dielectric tunable materials are widely used in microwave tunable components, such as phase shifters, resonators and filters on phased array antennas. In recent years, bismuth-based cubic pyrochlore materials have received extensive attention due to their excellent diele...

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