Boron-gallium co-doped single crystal silicon wafer and its preparation method and solar cell
A technology for solar cells and monocrystalline silicon wafers, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of crystal resistivity, silicon lattice distortion, and hinder the large-scale application of gallium-doped single crystals, etc. problem, to achieve the effect of easy operation and simple preparation method
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0029] Put polysilicon material, 5.6g of borosilicate alloy, 2.7g of gallium-silicon alloy in total 66kg into the quartz crucible, and put them neatly. The initial concentration of gallium in the melt is expected to be 1.85×10 15 atoms / cm3, the boron concentration is expected to be 3.95×10 15 atoms / cubic centimeter, target resistivity 2~4.5Ω. cm, put the above-mentioned raw materials in the Czochralski single crystal furnace, vacuumize the system, heat the furnace body, control the temperature in the furnace to gradually increase to 1450°C, melt the raw materials and alloys completely, and stabilize the melt after fully mixing The temperature is at 1420°C, and the seed crystal is slowly put in, and the temperature gradient in the furnace is adjusted to be constant. After seeding, necking, shouldering, equal-diameter growth, and finishing stages, the crystal rotation speed is controlled at 5 rpm throughout the process, and the quartz The rotation speed of the crucible is 5rpm,...
Embodiment 2
[0033] Put polysilicon material, 0.4g of borosilicate alloy, 6.6g of gallium-silicon alloy, 66kg in total into the quartz crucible, and put them neatly. The initial concentration of gallium in the melt is expected to be 3.0×10 15 atoms / cm3, the boron concentration is expected to be 3.0×10 15atoms / cubic centimeter, the target resistivity is 1.1~2.9Ω. cm. Put the above-mentioned raw materials in a Czochralski single crystal furnace, vacuumize the system, heat the furnace body, control the temperature in the furnace to gradually increase to 1460°C, melt all the raw materials and alloys, and stabilize the melt temperature at 1430°C, slowly put in the seed crystal, adjust the temperature gradient in the furnace to be constant, go through seeding, necking, shouldering, equal diameter growth, and finishing stages, keep the crystal rotation speed at 10rpm during the whole process, and the quartz crucible rotation speed The crystal growth rate is 10rpm, and the crystal growth rate is...
Embodiment 3
[0037] Put polysilicon material, 5.6g of borosilicate alloy, 0.09g of gallium metal in total 80kg into the quartz crucible, put them neatly, and the concentration of gallium in the initial melt is expected to be 1.0×10 16 atoms / cm3, the boron concentration is expected to be 5.0×10 15 atoms / cubic centimeter, the target resistivity is 0.9~3.5Ω. cm. Put the above-mentioned raw materials in a Czochralski single crystal furnace, vacuumize the system, heat the furnace body, control the temperature in the furnace to gradually rise to 1480°C, melt all the raw materials and alloys, and stabilize the melt temperature at 1450°C, slowly put in the seed crystal, adjust the temperature gradient in the furnace to be constant, after seeding, necking, shouldering, equal diameter growth, and finishing stages, keep the crystal rotation speed at 15rpm throughout the process, and the quartz crucible The rotation speed is 15rpm, the crystal growth rate is reduced from 100mm / h to 45mm / h after neck...
PUM
| Property | Measurement | Unit |
|---|---|---|
| electrical resistivity | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More