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Preparation method of flexible pyroelectric film

A thermoelectric thin film and flexible technology, which is applied in the field of thermoelectric material preparation, can solve the problems of low melting point of flexible substrates and the inability of thin film preparation to proceed smoothly, and achieves the effects of satisfying heat treatment conditions, improving performance in all aspects, and heating quickly and uniformly.

Active Publication Date: 2014-12-17
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When preparing flexible thermoelectric thin films, thermoelectric thin films need to be deposited on flexible substrates, and most flexible substrates have low melting points. Therefore, many preparation methods (such as chemical vapor deposition, electron beam evaporation, etc.) are due to higher deposition temperatures ( up to 500°C or more), during the film deposition process, the flexible substrate (such as polyimide, etc.) will be melted, resulting in the failure of film preparation

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  • Preparation method of flexible pyroelectric film

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preparation example Construction

[0037] The invention provides a method for preparing a flexible thermoelectric film. The method adopts the combination of screen printing method / casting method and microwave sintering process, which can break through the process of preparing a film on a flexible substrate with a low melting point by thermoelectric materials with a high melting point. The bottleneck of the process is to obtain high-quality thermoelectric thin films with excellent thermoelectric properties in a short time and at a low sintering temperature.

[0038] The preparation method of the flexible thermoelectric thin film of the present invention comprises the following steps:

[0039] S100: Synthetic thermoelectric material ingot.

[0040] There are many ways to synthesize ingots of thermoelectric materials, such as zone melting method, plasma discharge sintering method, hydrothermal method, hot pressing method, etc.

[0041] In one of the embodiments, the zone melting method is preferred for the synthe...

Embodiment 1

[0075] (1) According to antimony-doped Bi 2 Te 3 Composition ratio of base thermoelectric materials Weigh commercial tellurium, bismuth and antimony metal elements as reaction raw materials;

[0076] (2) put into zone melting furnace after the reaction raw material that weighs is mixed and carry out smelting, obtain Bi 2 Te 3 The base thermoelectric material ingot is cast; wherein, the melting temperature used is 950°C, the width of the melting zone is 35mm, the temperature gradient is 15°C / cm, and the growth rate of the thermoelectric material ingot is 20mm / h.

[0077] (3) Using a ball mill to ball mill the thermoelectric material ingot obtained in step (2) and then sieve it to obtain a thermoelectric material powder with a particle size of 1 μm to 10 μm; wherein, the rotational speed of the ball mill is 350 r / min, and the ball milling time is 24 hours.

[0078] (4) The mixture of dibutyl phthalate and PVB is used as a binder, Span-80 is used as a dispersant, and a mixture...

Embodiment 2

[0087] (1) According to antimony-doped Bi 2 Te 3 Composition ratio of base thermoelectric materials Weigh commercial tellurium, bismuth and antimony metal elements as reaction raw materials;

[0088] (2) put into zone melting furnace after the reaction raw material that weighs is mixed and carry out smelting, obtain Bi 2 Te 3 The base thermoelectric material ingot is cast; wherein, the melting temperature used is 850°C, the width of the melting zone is 30mm, the temperature gradient is 40°C / cm, and the growth rate of the thermoelectric material ingot is 25mm / h.

[0089](3) Using a ball mill to ball mill the thermoelectric material ingot obtained in step (2) and then sieve to obtain a thermoelectric material powder with a particle size of 1 μm to 10 μm; wherein, the rotational speed of the ball mill is 500 r / min, and the ball milling time is 20 hours.

[0090] (4) Dibutyl phthalate is used as a binding agent, 1-methyl-2-pyrrolidone is used as a dispersant, and terpineol is u...

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Abstract

The invention discloses a preparation method of a flexible pyroelectric film. The preparation method comprises the following steps of compounding a pyroelectric material casting ingot; grinding and screening the compounded pyroelectric material casting ingot, and obtaining a pyroelectric material powder; mixing an adhesive, a dispersive agent and an organic solvent, uniformly stirring, and preparing a slurry; uniformly mixing and stirring the pyroelectric material powder and the slurry, so as to obtain a mixture material; depositing the mixture material on a flexible substrate by a screen printing method or a tape casting method, and obtaining a precursor of the flexible pyroelectric film; drying the precursor, sintering by microwave, and cooling, so as to obtain the flexible pyroelectric film. The method has the advantages that the bottleneck of the process of using pyroelectric material with high melting point to prepare the film on the flexible substrate with low melting point is overcome, and the flexible pyroelectric film with high quality and excellent pyroelectric property can be obtained under the conditions of shorter time and lower sintering temperature.

Description

technical field [0001] The invention relates to the preparation of thermoelectric materials, in particular to a preparation method of a flexible thermoelectric thin film. Background technique [0002] In recent years, micro-electromechanical systems, microelectronic systems, system-on-a-chip and other micro-solid-state devices have been widely used. Such tiny solid-state devices usually require tiny batteries with low output power and high output voltage to power them. The micro thermoelectric battery based on thermoelectric thin film material is a promising micro power source with low output power and high output voltage. Therefore, the research on thermoelectric thin film material has also attracted people's attention. [0003] At present, there are many methods for preparing thermoelectric thin film materials, such as physical vapor deposition, chemical vapor deposition, metal-organic chemical vapor deposition, magnetron sputtering, electron beam evaporation and electroc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F7/02
Inventor 陈敏秦海明肖哲鹏蒋俊肖昱琨曹自平江浩川
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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