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Preparation method for large area CdS thin film

A thin-film preparation, large-area technology, applied in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve the problems of difficult thin film growth, affecting thin film adsorption vacancies, thin thin film unevenness, etc., and achieve simple equipment. , The effect of dense film and fast reaction efficiency

Inactive Publication Date: 2015-03-11
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of preparing large-area CdS thin films, magnetic stirring is generally used to ensure uniformity, and magnetic stirring will affect the adsorption of vacancies in the film, and even the thin film is difficult to grow when the stirring is too fast.
However, when the stirring is too slow, the growth of the film will be uneven.

Method used

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  • Preparation method for large area CdS thin film
  • Preparation method for large area CdS thin film
  • Preparation method for large area CdS thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Based on the copper indium gallium selenide substrate, the chemical water bath method is used to prepare a large-area cadmium sulfide film under high ammonia conditions. The preparation steps are as follows:

[0052] Preparation of CIGS substrate: Firstly, the CIGS absorbing layer prepared on the glass substrate must be obtained.

[0053] 1) Cleaning of soda lemon glass

[0054] ① Soak a 3cm×3cm soda glass in heavy potassium hydroxide solution (a solution made of 300 grams of potassium hydroxide and 3 liters of deionized water) for 2 hours; ② Put the rinsed soda glass in a concentration of 99.5 % acetone solution, put it into an ultrasonic cleaning machine for cleaning with an ultrasonic frequency of 50kHz and a time of 30min, which can be properly heated to 40°C; ③ Take the soda glass out of the acetone solution and rinse it with deionized water; ④ Clean the washed Soda-lemon glass substrates were cleaned with alcohol and dried with nitrogen.

[0055] 2) Preparation ...

Embodiment 2

[0067] Based on the copper indium gallium selenide substrate, the chemical water bath method is used to prepare a large-area cadmium sulfide film under high ammonia conditions. The preparation steps are as follows:

[0068] Preparation of CIGS substrate: Firstly, the CIGS absorbing layer prepared on the glass substrate must be obtained.

[0069] 1) Cleaning of soda lemon glass

[0070] ① Soak a 3cm×3cm soda glass in heavy potassium hydroxide solution (a solution made of 300 grams of potassium hydroxide and 3 liters of deionized water) for 2 hours; ② Put the rinsed soda glass in a concentration of 99.5 % acetone solution, put it into an ultrasonic cleaning machine for cleaning with an ultrasonic frequency of 50kHz and a time of 30min, which can be properly heated to 40°C: ③Take the soda glass out of the acetone solution and rinse it with deionized water: ④Wash the cleaned Soda-lemon glass substrates were cleaned with alcohol and dried with nitrogen.

[0071] 2) Preparation of...

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Abstract

The invention relates to a preparation method for a large area CdS thin film. The preparation method can prepare the large area cadmium sulfide thin film through chemical bath deposition under the condition of high ammonia on the basis of a copper indium gallium diselenide substrate. The preparation method is characterized in that a molybdenum electrode is prepared on a glass substrate through magnetron sputtering, a copper indium gallium diselenide thin film is prepared through coevaporation, the substrate comprises a compound substrate of the molybdenum electrode and the copper indium gallium diselenide thin film, and the CdS thin film is prepared on the surface of the compound substrate through chemical bath deposition under the condition of high ammonia. The preparation method has the advantages that the crystal quality is good, the prepared film is compact, has no pinhole, and has good adhesiveness and high transmittance, and the preparation method has good repeatability and high efficiency in depositing the thin film, is simple and easy to implement, can be popularized in large scale, and has good application prospect in industrial production.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, especially in the field of thin-film solar cells with copper indium gallium selenide as the absorbing layer. The cadmium sulfide thin film is used as a key layer as a buffer layer to adjust the band gap gradient and as an n-type semiconductor material. Background technique [0002] Cadmium sulfide (CdS) is a semiconductor material with great research potential and a wide range of applications. It is easy to prepare, cost-effective and suitable for large-scale production. In addition, cadmium sulfide also has a variety of utilization forms. It can be made into zero-dimensional materials such as atomic clusters and nanoparticles, and can be used to prepare a variety of quantum devices; it can be prepared into one-dimensional nanomaterials such as nanowires, nanorods, nanoflowers, nanobelts, and nanohollow spheres. , can be applied to nanowire lasers, logic gate computing circuits, na...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/20
CPCH01L31/0322Y02E10/541Y02P70/50
Inventor 薛玉明尹富红李鹏海潘洪刚刘君郭晓倩宋殿友朱亚东冯少君张嘉伟刘浩高林航伟乔在祥李鹏宇王玉昆曲慧楠
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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