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GeSe2 nanocrystalline as well as preparation method and application thereof

A technology of nanocrystal and temperature reaction, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of harsh reaction conditions, high energy consumption, high temperature, etc., and achieve low reaction temperature and easy operation Simple, Short Effect

Inactive Publication Date: 2015-03-25
NANJING NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] GeSe 2 The bandgap energy Eg = 2.7 eV, is a wide bandgap IV-VI binary semiconductor material, which is widely used in photodetectors, supercapacitors, solar cells, thermoelectric and memory storage devices; however, as a photoelectric Active materials for chemical biosensors have yet to be reported
Synthetic GeSe 2 The methods are mainly vapor deposition and high-temperature calcination, the reaction conditions are harsh, the temperature is high, and the energy consumption is high.

Method used

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  • GeSe2 nanocrystalline as well as preparation method and application thereof
  • GeSe2 nanocrystalline as well as preparation method and application thereof
  • GeSe2 nanocrystalline as well as preparation method and application thereof

Examples

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Embodiment 1

[0033] At room temperature, in a clean and dry 100 mL three-necked flask, add 0.290 g GeI 4 , 0.062 g selenourea and 15 mL oleylamine. Then, the above mixture was added to 5 o Cmin -1 heating rate to 280 o C and kept at this temperature for 60 min. Naturally cooled to room temperature after the reaction was finished, an orange-yellow precipitate was obtained, which was separated by centrifugation and washed 4-5 times with n-heptane and absolute ethanol, 40 o The product was dried under vacuum at C for analysis and characterization.

[0034] The product was analyzed by XRD, EDS, SEM, HRTEM and mapping test (element surface distribution diagram) (Fig. 1, Fig. 2, Fig. 3), and it was proved that the composition of the obtained product only contained two elements, Ge and Se, and they were evenly distributed in the The GeSe 2 in semiconductor materials. XRD analysis ( Figure 1B ) shows that the resulting product is pure GeSe 2 Nanocrystals have a monoclinic phase structure...

Embodiment 2

[0036] The monoclinic GeSe prepared in Example 1 of the present invention 2 The nanocrystals are modified on the ITO electrode, and the photoelectrochemical (PEC) measurement is carried out. The specific process is as follows:

[0037] Photoelectric test sample preparation: Weigh the sample to be tested GeSe 2 0.004 g was ultrasonically dispersed in a mixed solution of 2 mL of ethanol and water, and 10 μL of the above-mentioned dispersion was evenly dropped on the ITO electrode with a pipette gun, and it was used for testing after it was naturally dried.

[0038] Photoelectric tests were performed on a Zahner photoelectrochemical workstation. Three-electrode working system: GeSe 2 The modified ITO electrode was used as the working electrode, the Ag / AgCl was used as the reference electrode, and the platinum wire was used as the counter electrode. Electrolyte is 0.1 M PBS buffer solution (pH=7.4, 0.1 M PBS is NaH 2 PO 4 and Na 2 HPO 4 mixed preparation), adding 0.300 g o...

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Abstract

The invention discloses a preparation method of a monoclinic-phase GeSe2 nanocrystalline and a semiconductor material prepared from the monoclinic-phase GeSe2 nanocrystalline. With GeI4 as a germanium source, selenourea as a selenium source and oleylamine as a solvent, the cerebriform ellipsoidal monoclinic-phase GeSe2 nanocrystalline is obtained by use of a one-pot method. According to the preparation method of the monoclinic-phase GeSe2 nanocrystalline, the GeSe2 nanocrystalline uniform in dimension and good in dispersibility is synthesized under normal pressure and at a relatively low temperature; the reaction conditions are mild, the operations are simple, and the nano GeSe2 is synthesized conveniently and quickly. The monoclinic-phase GeSe2 nanocrystalline prepared by use of the preparation method is a novel photoelectrochemical (PEC) active material with excellent properties, and the PEC active material is good in photoresponse signal, good in stability, and has an application prospect in photoelectrochemical biosensor construction.

Description

technical field [0001] The invention relates to a semiconductor material, in particular to a monoclinic phase GeSe 2 Nanocrystal and its preparation method, and the application of the semiconductor material in photoelectrochemistry (PEC). Background technique [0002] With the continuous development and innovation of electroanalytical chemistry, photoelectrochemistry (PEC) has become a novel analytical method with important application prospects due to its detection characteristics such as high sensitivity, low background signal, simple equipment, and easy miniaturization. [0003] Photoelectric active materials are an important part of building photoelectrochemical biosensors. At present, the commonly used photoelectric active materials mainly include: (1) Inorganic semiconductor nanoparticles, such as TiO 2 , CdS, CdSe, etc.; (2) Organic small molecule materials, including porphyrin and its derivatives, azo dyes, phthalocyanine and chlorophyll, etc.; polymers, such as pol...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y30/00G01N27/30
Inventor 包建春张龙曹慧娟韩敏戴志晖
Owner NANJING NORMAL UNIVERSITY
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