Preparation method of dodecafluoroheptyl-propyl-POSS modified graphene oxide

Abstract

A preparation method of dodecafluoroheptyl-propyl-POSS modified graphene oxide belongs to the technical filed of materials. The preparation process comprises three stages, wherein the first stage is a primary blocking stage, in which a silane coupling agent is added dropwise into T7 dodecafluoroheptyl-propyl-POSS to be subjected to blocking reaction to obtain a solution; the second stage is a grafting reaction stage, in which graphene oxide is added into the solution; the third stage in a secondary blocking ring-closure reaction stage, in which the silane coupling agent and dodecafluoroheptyl-propyl-siloxane are added and react to obtain the dodecafluoroheptyl-propyl-POSS modified graphene oxide with a higher grafting rate. The preparation method provided by the invention adopts three-time blocking and a one-pot synthetic process, greatly improves the grafting efficiency and increases the utilization ratio of fluorine-containing POSS, effectively reduces the dosage of T7 dodecafluoroheptyl-propyl-POSS, increases the density of fluorine and silicone on the surface of graphene, and further improves the surface property of water and oil repellency of graphene, the preparation process is simple, product purity is high and the production cost is low.

Description

Technical field [0001] The present invention belongs to the technical field of chemical industry, and in particular relates to a preparation method of dodecafluoroheptylpropyl POSS modified graphene oxide, especially using T 7 Preparation method of modified graphene oxide prepared with dodecafluoroheptylpropyl POSS. Background technique [0002] Graphene is a new carbon material in which carbon atoms are densely packed into a single-layer two-dimensional honeycomb lattice structure. The thickness of this graphite crystal film is only 0.335nm. It is the basic unit for the construction of other dimensional carbon materials. Good crystallinity and electrical properties. Graphene has a high theoretical specific surface area, outstanding thermal conductivity and mechanical properties, and high electron mobility at room temperature. In addition, its special structure gives it a series of properties such as the half-integer quantum Hall effect and the never-disappearing conductivity, w...

AI Technical Summary

Problems solved by technology

POSS was successfully grafted on the prepared graphene oxide sheet, realizing the complementary advantages of graphene oxide and POSS structure, but due to the thermodynamic control of the reaction, the number of POSS grafted with graphene was greatly affected by the increase of temperature. Restricted, the toughening effect of modified epoxy resin is also limited

[0012] Although modifying graphene can produce high-performance materials and expand its application range, the existing graphene modification technology is mainly a single group modification, and the yield of the product and the modified graphene oxide The properties mainly depend on the degree of reaction and the nature of the modified group, and most of the different single modification schemes have disadvantages such as low raw material utilization rate, low product yield, and high preparation cost: the use of silane coupling agent to modify graphene oxide The method has the disadvantages of poor practicability; the method of modifying graphene oxide with short-chain fluorine-containing siloxane has the disadvantages of low fluorine-silicon density on the surface of graphene and low siloxane utilization; because the ring-closing reaction of POSS is Reversible reaction, POSS modified graphene oxide also has the disadvantage of low POSS conversion rate

These reasons lead to the poor effect of the final graphene surface modification.

Images