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Method for preparing high-orientation carbon nanotube film cooling fin

A carbon nanotube film and carbon nanotube array technology, which is applied in the field of preparation of high-oriented carbon nanotube film heat sinks, can solve the problems that limit the development of industrial applications, the complex preparation process, and the inconvenience of the batch preparation process of graphene heat sinks. Maturity and other issues, to achieve the effect of excellent physical and chemical stability, simple process and equipment, and low cost

Inactive Publication Date: 2015-04-01
NAT CENT FOR ADVANCED PACKAGING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Graphene has very high thermal conductivity. However, the preparation process of graphene is relatively complicated, and the prepared graphene often has a large number of defects. Therefore, there are still many technical challenges in the controllable preparation of high thermal conductivity graphene heat sinks.
In addition, the batch preparation process of graphene heat sink is not yet mature, which limits the development of its industrial application

Method used

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  • Method for preparing high-orientation carbon nanotube film cooling fin
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  • Method for preparing high-orientation carbon nanotube film cooling fin

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Embodiment 1

[0033] The preparation method of the highly oriented carbon nanotube thin film heat sink, the specific steps are as follows:

[0034] (1) Preparation of spinnable carbon nanotube arrays: super-aligned spinnable carbon nanotube array precursors, which are characterized in that the carbon nanotubes in the carbon nanotube array have a super-aligned structure perpendicular to the growth substrate; growth substrate selection 6 Inch substrate with silicon oxide silicon wafer; the catalyst uses a 0.3nm thick Fe catalyst film; the growth carbon source gas is ethylene gas;

[0035] The growth process includes: first, a 50nm thick aluminum oxide film is evaporated on the surface of a 6Inch silicon wafer substrate with an oxide layer by electron beam evaporation equipment, and then a 0.3nm thick aluminum oxide film is evaporated on the surface of aluminum oxide by electron beam evaporation equipment Iron catalyst film, that is, spinnable carbon nanotube array growth catalyst material.

...

Embodiment 2

[0042] The preparation method of the highly oriented carbon nanotube thin film heat sink, the specific steps are as follows:

[0043] (1) Preparation of spinnable carbon nanotube arrays: super-aligned spinnable carbon nanotube array precursors, which are characterized in that the carbon nanotubes in the carbon nanotube array have a super-aligned structure perpendicular to the growth substrate; growth substrate selection 6Inch substrate with silicon oxide silicon wafer; the catalyst uses a 3nm thick Fe catalyst film; the growth carbon source gas is acetylene gas;

[0044] The growth process includes: first, a 3nm-thick iron catalyst film is evaporated on the surface of a 6Inch silicon wafer substrate with an oxide layer by means of an electron beam evaporation device to obtain a spinnable carbon nanotube array growth catalyst material. Put the above-prepared catalyst into the growth chamber of the tubular CVD growth equipment to raise the temperature. After the temperature rise...

Embodiment 3

[0050] The preparation method of the highly oriented carbon nanotube thin film heat sink, the specific steps are as follows:

[0051] (1) Preparation of spinnable carbon nanotube arrays: super-aligned spinnable carbon nanotube array precursors, which are characterized in that the carbon nanotubes in the carbon nanotube array have a super-aligned structure perpendicular to the growth substrate; growth substrate selection Quartz substrate; the catalyst uses a 2nm thick Fe catalyst film; the growth carbon source gas is ethylene gas;

[0052] The growth process includes: first evaporating a layer of 50nm thick aluminum oxide film on the surface of the quartz substrate by electron beam evaporation equipment, and continuing to evaporate a layer of 2nm thick iron catalyst film on the surface of the alumina surface by electron beam evaporation equipment to obtain Spinning carbon nanotube arrays to grow catalyst materials. Put the above-prepared catalyst into the growth chamber of the...

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Abstract

The invention relates to a method for preparing a high-orientation carbon nanotube film cooling fin, and belongs to the technical field of thermal dissipation. The method for preparing the high-orientation carbon nanotube film cooling fin comprises the following steps: preparing a spinning carbon nanotube array, preparing a super-aligned carbon nanotube film by dry spinning, and preparing the high-orientation carbon nanotube film cooling fin by stacking on the surface of a chip. According to the method, a super-aligned spinning carbon nanotube array material is prepared by a CVD (Chemical Vapor Deposition) method, and a thickness-controllable high-orientation carbon nanotube film cooling fin is obtained by applying dry direct spinning on the surface of the chip. The film cooling fin has a quite high heat conductivity, so that a larger effective surface area is created on the surface of the chip to transmit heat to the outside environment through a radiator, accordingly, the running temperature of the chip is decreased.

Description

technical field [0001] The invention relates to a method for preparing a highly oriented carbon nanotube film heat sink, belonging to the technical field of heat dissipation. Background technique [0002] According to Moore's Law and the concept of Ultra-Moore, microelectronics technology continues to develop in the direction of higher performance, higher integration, and smaller volume. With the concentration of chip functions and the reduction of size, electronic components and systems continue to become smaller and faster, chip power density continues to increase, and operating temperature increases. In particular, the heat dissipated by circuits that integrate high-power devices and have more complex structures may reach 400W / cm 2 even more. Photoelectric devices like Huawei have a heat flux of 100 W / cm 2 Around, the heat flux density generated by the computer CPU during its operation has reached 100-400W / cm 2 , some semiconductor laser devices even reach 2000-3000W / ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K7/20
Inventor 勇振中
Owner NAT CENT FOR ADVANCED PACKAGING
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