Organic electroluminescent device and method for preparing same
An electroluminescence device and electroluminescence technology, which are applied in the fields of electric solid state devices, semiconductor/solid state device manufacturing, electrical components, etc., and can solve the problems of low luminous efficiency, damage to organic layers, and easy quenching.
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[0033] The preparation method of the organic electroluminescent device 100 according to an embodiment includes the following steps:
[0034] In step S110 , a hole injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 and an electron injection layer 60 are sequentially formed on the surface of the anode 10 .
[0035] The anode 10 is indium tin oxide glass (ITO), fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide glass (AZO) or indium-doped zinc oxide glass (IZO), preferably ITO.
[0036] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pre-treated. The pre-treatment includes: subjecting the anode 10 to photolithography, cutting it into a required size, using detergent, deionization Water, acetone, ethanol, and isoacetone were each ultrasonically cleaned for 15 minutes to remove organic pollutants on the surface of the anode 10 .
[0037] The hole i...
Embodiment 1
[0051] The structure prepared in this example is ITO / MoO 3 / NPB / Alq 3 / Bphen / LiF / ITO / ZnS:WO 3 : ZnO / ITO organic electroluminescent device, in this example and the following examples, " / " means layer, and ":" means doping.
[0052] First, the ITO is subjected to photolithography, and then cut into the required size, and then ultrasonicated with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes each to remove organic pollutants on the glass surface; after cleaning, the conductive substrate is cleaned. Appropriate treatment: oxygen plasma treatment, treatment time is 5min, power is 30W; vapor deposition hole injection layer, material is MoO 3 , the thickness is 60nm; the vapor deposition hole transport layer, the material is NPB, the thickness is 50nm; the vapor deposition light-emitting layer, the material is BCzVBi, the thickness is 30nm; the vapor deposition electron transport layer, the material is Bphen, the thickness is 160nm; The injection lay...
Embodiment 2
[0059] The structure prepared in this example is AZO / MoO 3 / TCTA / ADN / Bphen / CsF / AZO / CdS:MoO 3 :TiO 2 / IZO organic electroluminescent devices.
[0060] First, the AZO glass substrate was washed with detergent, deionized water, and ultrasonic for 15 minutes in order to remove organic pollutants on the glass surface; evaporation hole injection layer: the material is MoO 3 , the thickness is 80nm; the vapor deposition hole transport layer: the material is TCTA, the thickness is 60nm; the vapor deposition light-emitting layer: the selected material is ADN, the thickness is 5nm; the vapor deposition electron transport layer, the material is Bphen, the thickness is 200nm; Electron injection layer is plated, the material is CsF, the thickness is 10nm; the cathode is evaporated, and the first thin film layer is prepared by magnetron sputtering method on the surface of the electron injection layer, the material is AZO, the thickness is 50nm, and then the electron beam The doped layer ...
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