Organic light emitting diode device and preparation method thereof
An electroluminescence device and electroluminescence technology, which are applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., to achieve the effect of compact structure, good flatness and strong corrosion resistance.
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Embodiment 1
[0055] Such as figure 1 The schematic diagram of the structure of the organic electroluminescent device is shown. This embodiment provides a method for preparing an organic electroluminescent device, which includes the following steps:
[0056] (1) Prepare the light-emitting functional layer 20 and the cathode layer 30 on the anode substrate
[0057] a. Pretreatment of conductive glass substrate
[0058] Take the ITO glass substrate 10, and perform acetone cleaning→ethanol cleaning→deionized water cleaning→ethanol cleaning in sequence, all cleaning with an ultrasonic cleaning machine, washing and cleaning for 5 minutes, then blowing dry with nitrogen, and drying in an oven for later use; The cleaned ITO glass also needs surface activation treatment to increase the oxygen content of the conductive surface layer and improve the work function of the conductive layer surface; the thickness of ITO is 100nm;
[0059] b. Preparation of luminescent functional layer 20 and cathode la...
Embodiment 2
[0078] A method for preparing an organic electroluminescent device, comprising the following steps:
[0079] (1) Preparation of luminescent functional layer and cathode layer on the anode substrate
[0080] With embodiment one;
[0081] (2) Prepare the encapsulation layer on the cathode layer
[0082] a. Fabrication of silicon oxynitride barrier layer:
[0083] A silicon oxynitride barrier layer is deposited on the surface of the cathode layer 30 by plasma enhanced chemical vapor deposition (PECVD). The silicon oxynitride barrier layer is made of silicon oxynitride, and the thickness of the deposited silicon oxynitride barrier layer is In the process of depositing the silicon oxynitride barrier layer 401, the deposition temperature is 50°C, and the gas sources used are hexamethyldisilamine (HMDS), ammonia (NH 3 ), oxygen (O 2 ) and argon (Ar), wherein, the HMDS, NH 3 , O 2 The flows of Ar and Ar are 14sccm, 18sccm, 18sccm and 80sccm respectively;
[0084] b. Fabrication...
Embodiment 3
[0091] A method for preparing an organic electroluminescent device, comprising the following steps:
[0092] (1) Preparation of luminescent functional layer and cathode layer on the anode substrate
[0093] With embodiment one;
[0094] (2) Prepare the encapsulation layer on the cathode layer
[0095] a. Fabrication of silicon oxynitride barrier layer:
[0096] A silicon oxynitride barrier layer is deposited on the surface of the cathode layer 30 by plasma enhanced chemical vapor deposition (PECVD). The silicon oxynitride barrier layer is made of silicon oxynitride, and the thickness of the deposited silicon oxynitride barrier layer is In the process of depositing the silicon oxynitride barrier layer 401, the deposition temperature is 40°C, and the gas sources used are hexamethyldisilamine (HMDS), ammonia (NH 3 ), oxygen (O 2 ) and argon (Ar), wherein, the HMDS, NH 3 , O 2 The flows of Ar and Ar are 12sccm, 15sccm, 16sccm and 76sccm respectively;
[0097] b. Fabrication...
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