a cotio 3 Preparation method of nano-array humidity-sensitive film
A moisture-sensitive film and nano-array technology is applied in the field of moisture-sensitive film preparation to achieve the effects of short production cycle, convenient operation and improved moisture sensitivity
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Embodiment 1
[0023] 1) Analytical pure cobalt chloride hexahydrate (CoCl 2 ·6H 2 O) be fully dissolved in deionized water to obtain an aqueous solution of cobalt chloride, and then slowly adding TiCl with a mass concentration of 15% wherein 3 hydrochloric acid solution, magnetically stirred at room temperature to obtain a mixed solution A with a molar ratio of Co and Ti of 1:0.5; using analytically pure concentrated ammonia (NH 3 ·H 2 O) adjust the pH value of the mixed solution A to 6 to obtain a blue-purple precursor solution B;
[0024] 2) The silicon substrate was ultrasonically cleaned in analytically pure acetone and absolute ethanol for 15 minutes, and then rinsed three times with deionized water to obtain a cleaned silicon substrate;
[0025] 3) Move the precursor solution B into the hydrothermal reactor and control the filling ratio of the hydrothermal reactor at 50%, then immerse the cleaned silicon substrate in the precursor solution B, set the reaction temperature to 180°C, ...
Embodiment 2
[0030] 1) Analytical pure cobalt chloride hexahydrate (CoCl 2 ·6H 2 O) be fully dissolved in deionized water to obtain an aqueous solution of cobalt chloride, and then slowly adding TiCl with a mass concentration of 15% wherein 3 hydrochloric acid solution, magnetically stirred at room temperature to obtain a mixed solution A with a molar ratio of Co and Ti of 1:1; using analytically pure concentrated ammonia (NH 3 ·H 2 O) adjust the pH value of the mixed solution A to 8 to obtain a blue-purple precursor solution B;
[0031]2) The silicon substrate was ultrasonically cleaned in analytically pure acetone and absolute ethanol for 15 minutes, and then rinsed three times with deionized water to obtain a cleaned silicon substrate;
[0032] 3) Move the precursor solution B into the hydrothermal reactor and control the filling ratio of the hydrothermal reactor at 65%, then immerse the cleaned silicon substrate in the precursor solution B, set the reaction temperature to 220°C, and...
Embodiment 3
[0038] 1) Analytical pure cobalt chloride hexahydrate (CoCl 2 ·6H 2 O) be fully dissolved in deionized water to obtain an aqueous solution of cobalt chloride, and then slowly adding TiCl with a mass concentration of 15% wherein 3 hydrochloric acid solution, magnetically stirred at room temperature to obtain a mixed solution A with a Co and Ti molar ratio of 1:2; using analytically pure concentrated ammonia (NH 3 ·H 2 O) adjust the pH value of the mixed solution A to 10 to obtain a blue-purple precursor solution B;
[0039] 2) The silicon substrate was ultrasonically cleaned in analytically pure acetone and absolute ethanol for 15 minutes, and then rinsed three times with deionized water to obtain a cleaned silicon substrate;
[0040] 3) Move the precursor solution B into the hydrothermal reactor and control the filling ratio of the hydrothermal reactor at 65%, then immerse the cleaned silicon substrate in the precursor solution B, set the reaction temperature to 240°C, and ...
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