a cotio 3 Preparation method of nano-array humidity-sensitive film

A moisture-sensitive film and nano-array technology is applied in the field of moisture-sensitive film preparation to achieve the effects of short production cycle, convenient operation and improved moisture sensitivity

Active Publication Date: 2017-05-31
SHAANXI UNIV OF SCI & TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[He HY. Humidity sensitivity of CoTiO 3 thin film prepared by sol–gel method[J].Materials Science and Technology,2007,22(2):95-97.] However, there is still a certain gap between its sensitive characteristic indicators and the requirements of practical applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a cotio <sub>3</sub> Preparation method of nano-array humidity-sensitive film
  • a cotio <sub>3</sub> Preparation method of nano-array humidity-sensitive film
  • a cotio <sub>3</sub> Preparation method of nano-array humidity-sensitive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1) Analytical pure cobalt chloride hexahydrate (CoCl 2 ·6H 2 O) be fully dissolved in deionized water to obtain an aqueous solution of cobalt chloride, and then slowly adding TiCl with a mass concentration of 15% wherein 3 hydrochloric acid solution, magnetically stirred at room temperature to obtain a mixed solution A with a molar ratio of Co and Ti of 1:0.5; using analytically pure concentrated ammonia (NH 3 ·H 2 O) adjust the pH value of the mixed solution A to 6 to obtain a blue-purple precursor solution B;

[0024] 2) The silicon substrate was ultrasonically cleaned in analytically pure acetone and absolute ethanol for 15 minutes, and then rinsed three times with deionized water to obtain a cleaned silicon substrate;

[0025] 3) Move the precursor solution B into the hydrothermal reactor and control the filling ratio of the hydrothermal reactor at 50%, then immerse the cleaned silicon substrate in the precursor solution B, set the reaction temperature to 180°C, ...

Embodiment 2

[0030] 1) Analytical pure cobalt chloride hexahydrate (CoCl 2 ·6H 2 O) be fully dissolved in deionized water to obtain an aqueous solution of cobalt chloride, and then slowly adding TiCl with a mass concentration of 15% wherein 3 hydrochloric acid solution, magnetically stirred at room temperature to obtain a mixed solution A with a molar ratio of Co and Ti of 1:1; using analytically pure concentrated ammonia (NH 3 ·H 2 O) adjust the pH value of the mixed solution A to 8 to obtain a blue-purple precursor solution B;

[0031]2) The silicon substrate was ultrasonically cleaned in analytically pure acetone and absolute ethanol for 15 minutes, and then rinsed three times with deionized water to obtain a cleaned silicon substrate;

[0032] 3) Move the precursor solution B into the hydrothermal reactor and control the filling ratio of the hydrothermal reactor at 65%, then immerse the cleaned silicon substrate in the precursor solution B, set the reaction temperature to 220°C, and...

Embodiment 3

[0038] 1) Analytical pure cobalt chloride hexahydrate (CoCl 2 ·6H 2 O) be fully dissolved in deionized water to obtain an aqueous solution of cobalt chloride, and then slowly adding TiCl with a mass concentration of 15% wherein 3 hydrochloric acid solution, magnetically stirred at room temperature to obtain a mixed solution A with a Co and Ti molar ratio of 1:2; using analytically pure concentrated ammonia (NH 3 ·H 2 O) adjust the pH value of the mixed solution A to 10 to obtain a blue-purple precursor solution B;

[0039] 2) The silicon substrate was ultrasonically cleaned in analytically pure acetone and absolute ethanol for 15 minutes, and then rinsed three times with deionized water to obtain a cleaned silicon substrate;

[0040] 3) Move the precursor solution B into the hydrothermal reactor and control the filling ratio of the hydrothermal reactor at 65%, then immerse the cleaned silicon substrate in the precursor solution B, set the reaction temperature to 240°C, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method for a CoTiO3 nanoarray humidity-sensitive film. The preparation method comprises the following steps: adding a hydrochloric solution of TiCl3 into a cobalt chloride aqueous solution to obtain a mixed solution A; regulating the pH value of the mixed solution to be 6-10, and obtaining a precursor solution B; transferring the precursor solution B into a hydrothermal reaction kettle, soaking a cleaned silicon substrate in the precursor solution B for reaction, and washing the silicon substrate to obtain a film C on the silicon substrate; putting the silicon substrate provided with the film C onto a sample stage of a magnetron sputtering apparatus, performing magnetron sputtering by adopting a Co2O3 radio-frequency target and a TiO2 radio-frequency target, and forming a film D on the silicon substrate; keeping the silicon substrate provided with the film D at a temperature ranging from 600 DEG C to 750 DEG C, and obtaining the CoTiO3 nanoarray humidity-sensitive film. The preparation method can effectively regulate and control the morphology of the film, is good in film-forming property, convenient to carry out, short in production period, high in efficiency and suitable for industrial production. The prepared CoTiO3 film has excellent moisture sensitivity at the room temperature and is short in response-recovery time.

Description

technical field [0001] The invention relates to a method for preparing a moisture-sensitive thin film, in particular to a CoTiO 3 A method for preparing a nano-array moisture-sensitive film. Background technique [0002] Humidity refers to the content of water vapor in the environment. Humidity control is very important in people's life and in the field of industrial technology. Humidity sensor can be used in chemical gas purification, dryer, oven monitoring. In the field of motor vehicles, humidity sensors are mainly used in defoggers of automobile rearview mirrors and power plant assembly lines; in the field of medicine, humidity sensors are mainly used in respirators, sterilizers, incubators and pharmaceutical processes; In the field of agriculture, humidity sensors are mainly used in greenhouse air control, dew point detection, soil humidity detection and grain storage [Chen Z, Lu C.Humiditysensors: a review of materials and mechanisms[J].Sensor letters,2005,3(4 ):274...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/02B82Y40/00G01N27/12
Inventor 卢靖张亚宾曹丽云王勇闫婧文李永峰刘亚芹贺思彤王兴
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap