Silicon-carbon nanocomposite film, preparation method and application thereof and lithium ion battery

A carbon nanocomposite, lithium-ion battery technology, applied in battery electrodes, nanotechnology, nanotechnology and other directions, can solve the problems of low reversible capacity of negative electrode materials, low silicon specific gravity, short cycle life, etc., to simplify the battery assembly process, cycle Longer life and stable cycle effects

Active Publication Date: 2015-04-29
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to overcome the defects of low specific gravity of silicon in the entire negative electrode material, low reversible capacity and short cycle life of the negative electrode material in the prior art, provide a silicon-carbon nanocomposite film and its preparation method, and a T

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  • Silicon-carbon nanocomposite film, preparation method and application thereof and lithium ion battery
  • Silicon-carbon nanocomposite film, preparation method and application thereof and lithium ion battery
  • Silicon-carbon nanocomposite film, preparation method and application thereof and lithium ion battery

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preparation example Construction

[0027] The present invention also provides a method for preparing a silicon-carbon nanocomposite film, the method comprising the following steps:

[0028] (1) Etching the silicon wafer with an etching solution to form a porous silicon nanowire array on the surface of the silicon wafer;

[0029] (2) Depositing carbon nanomaterials on the porous silicon nanowire arrays by chemical vapor deposition using hydrocarbons as carbon sources and inert gases and / or hydrogen as carrier gases to form silicon-carbon on silicon wafers Nanocomposite films;

[0030] (3) In an alkaline aqueous solution, the silicon-carbon nanocomposite film on the silicon wafer is peeled off.

[0031] According to the method of the present invention, wherein, in step (1), the silicon wafer may be a polycrystalline silicon wafer or a single crystal silicon wafer, preferably a single crystal silicon wafer, and more preferably a single crystal with a resistivity less than 5 mΩ·cm silicon wafer.

[0032] Accordi...

Embodiment 1

[0052] Take a single crystal silicon wafer with a resistivity lower than 5mΩ·cm, put it in a plastic cup, add an aqueous solution of 0.02M silver nitrate and 5M hydrofluoric acid, and keep it warm at 50°C for 20 minutes. A layer of porous silicon nanometers is formed on the surface of the silicon wafer. For the line array, take out the silicon chip and rinse it with water, then immerse it in concentrated nitric acid for half an hour, take it out, then immerse it in water for half an hour, take it out and dry it at 60°C. Then put it into the middle of the tube furnace, feed argon hydrogen gas mixture (2 / 1, v / v), the total flow rate is 300sccm, after the temperature is programmed to 1050°C, start to feed methane, the flow rate is 100sccm, keep the temperature for 5 minutes Cool down quickly. After cooling down to room temperature, take out the silicon wafer from the furnace, immerse it in 5% sodium hydroxide aqueous solution at 90°C, react for 1 hour, and peel off the silicon-ca...

Embodiment 2

[0055] Take a single crystal silicon wafer with a resistivity lower than 5mΩ·cm, put it in a plastic cup, add an aqueous solution of 0.02M silver nitrate and 5M hydrofluoric acid, and keep it warm at 50°C for 30 minutes. A layer of porous silicon nanometers is formed on the surface of the silicon wafer. For the line array, take out the silicon chip and rinse it with water, then immerse it in concentrated nitric acid for half an hour, take it out, then immerse it in water for half an hour, take it out and dry it at 60°C. Then put it into the middle of the tube furnace, feed argon hydrogen gas mixture (2 / 1, v / v), the total flow rate is 300sccm, after the temperature is programmed to 1050°C, start to feed methane, the flow rate is 400sccm, keep the temperature for 5 seconds Cool down quickly. After cooling down to room temperature, take out the silicon wafer from the furnace, immerse it in 5% sodium hydroxide aqueous solution at 90°C, react for 1 hour, and peel off the silicon-ca...

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Abstract

The invention relates to a silicon-carbon nanocomposite film. The silicon-carbon nanocomposite film comprises an independent support structure and a carbon nanomaterial covering the independent support structure adopting porous silicon nanowire arrays. A preparation method of the silicon-carbon nanocomposite film comprises steps as follows: (1), a silicon wafer is etched by an etching liquid, and the porous silicon nanowire arrays are formed on the surface of the silicon wafer; (2), hydrocarbon is taken as a carbon source, inert gas and/or hydrogen are/is taken as carrier gas, and the carbon nanomaterial is deposited on the porous silicon nanowire arrays with a chemical vapor deposition method, so that the silicon-carbon nanocomposite film is formed on the silicon wafer; (3), the silicon-carbon nanocomposite film on the silicon wafer is peeled off in an aqueous alkaline solution. The silicon-carbon nanocomposite film can be obtained with a simple method and is taken as an anode material, so that the anode material has high capacity, stable circulation, long cycling life and actual application value.

Description

technical field [0001] The invention relates to a silicon-carbon nanocomposite film, a method for preparing the silicon-carbon nanocomposite film, an application of the silicon-carbon nanocomposite film as a negative electrode material, and a lithium-ion battery using the silicon-carbon nanocomposite film as a negative electrode material ion battery. Background technique [0002] Lithium-ion batteries are ideal power sources for portable electronic devices and electric vehicles. The development of new materials with high energy density, long cycle life and high density is currently a hot spot in the research field of lithium-ion batteries. Silicon is a new type of negative electrode material for lithium-ion batteries. Its lithium storage reaction voltage platform is low, and its theoretical capacity is extremely high (4200mAh / g), which is more than ten times that of graphite negative electrodes currently on the market. Silicon is abundant in nature. , is a class of lithium-...

Claims

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Application Information

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IPC IPC(8): H01M4/38H01M4/62H01M10/0525B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01M4/362H01M4/366H01M4/386H01M4/583H01M4/62H01M10/0525Y02E60/10
Inventor 李祥龙王斌智林杰
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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