Preparation method of perovskite film stable in air

A perovskite and thin film technology, which is applied in the field of preparation of perovskite thin films, can solve the problems of battery efficiency attenuation, hindering the promotion of battery production, poor stability, etc., and achieve the effect of simple steps and convenient control of process parameters

Inactive Publication Date: 2015-05-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, due to the poor stability of the above-mentioned organic-inorganic compound perovskite materials in aqueous solution, the efficiency of this kind of battery is easy to be greatly reduced in humid air, which is also one of the main obstacles hindering the production and promotion of this kind of battery.

Method used

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preparation example Construction

[0042] Such as figure 1 as shown, figure 1 It is a flow chart of the preparation method scheme one of the perovskite thin film stably existing in the air provided by the present invention, and the method comprises the following steps:

[0043] Step 1: Prepare IV and VII group compound solutions; the solute is lead iodide, lead chloride, lead bromide, tin iodide, tin chloride, tin bromide, germanium iodide, germanium chloride or germanium bromide At least one, the solvent is at least one of dimethylformamide, dimethyl sulfoxide, methanol, ethanol, ethylene glycol, isopropanol, n-butanol, acetone, toluene, chlorobenzene or chloroform, mixed solution The concentration is 0.01-1000mmol / ml, and the mixed solution is heated to 30-200°C, and the heating time is 5 minutes-24 hours;

[0044] Step 2: Spray, titrate, spin-coat or print the prepared IV and VII compound solution onto the substrate surface to form the first thin solution layer on the substrate surface; the substrate can b...

Embodiment 1

[0056] Refer to the above figure 2 In the scheme two shown, this embodiment is a method for preparing a perovskite thin film that exists stably in the air, comprising the following steps:

[0057] (1) Preparation of lead iodide PbI 2 , methyl ammonium iodide CH 3 NH 3 The DMF mixed solution of I, concentration is respectively 12mmol / ml and 36mmol / ml, and solution is heated to 100 ℃, and heating time is 3 hours;

[0058] (2) The solution is titrated onto the surface of the fluorine-doped tin oxide FTO substrate to form a thin solution layer;

[0059] (3) Use nitrogen to dry the thin solution layer to form a compound film; the gas pressure is 0.05-10 MPa, and the gas flow rate is 20 sccm; the distance between the film surface and the gas outlet is 10 cm;

[0060] (4) Heat and dry the compound film in the air at a temperature of 160°C for 10 minutes to obtain the desired perovskite CH 3 NH 3 PB 3 film.

Embodiment 2

[0062] Refer to the above figure 1 In the scheme one shown, this embodiment is a method for preparing a perovskite thin film that exists stably in the air, comprising the following steps:

[0063] (1) with lead iodide PbCl 2 DMF solution with a concentration of 12mmol / ml, the solution was heated at 50°C for 5 hours;

[0064] (2) The solution is titrated onto the surface of the aluminum-doped zinc oxide AZO substrate to form the first thin solution layer;

[0065] (3) adopt argon gas to dry the first thin solution layer on the substrate surface to form the first film; the gas pressure is 0.5MPa, the flow rate is 10sccm, and the facing distance between the substrate surface and the gas outlet is 3cm;

[0066] (4) Preparation of methyl ammonium iodide CH 3 NH 3 Cl solution, the concentration is 15mmol / ml, the prepared CH 3 NH 3 I 2 The solution is sprayed onto the surface of the first film, CH 3 NH 3 The I solution reacts chemically with the first film to form a second t...

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Abstract

The invention discloses a preparation method of a perovskite film stably existing in air. The method comprises two schemes as follows: Scheme I: an IV-group and VII-group compound solution is prepared; the solution is sprayed, titrated, spin-coated or printed onto a substrate surface, and a first thin solution layer is formed; the first thin solution layer is blown dry with a gas, and a first film is formed; a methyl ammonium halide solution is prepared and sprayed, titrated, spin-coated or printed onto the surface of the first film, and a second thin solution layer is formed through chemical reactions; the second thin solution layer is blown dry with a gas to form a film; the film is heated and dried or annealed, and the perovskite film is obtained; Scheme II: a mixed solution of two or more of IV-group and VII-group compounds and methyl ammonium halide is prepared; the mixed solution is sprayed, titrated, spin-coated or printed onto the substrate surface, and a thin solution layer is formed; the thin solution layer is blown dry with a gas to form a film; the film is heated and dried or annealed, and the perovskite film is obtained. According to the preparation method, steps are simple, technological parameters are convenient to control, and the method is suitable for large-area large-scale assembly line production.

Description

technical field [0001] The invention relates to the technical field of perovskite film preparation, in particular to a method for preparing a perovskite film stable in air. Background technique [0002] In 2009, Japanese scientists discovered that the perovskite-type light absorber has a band gap of only 1.5eV, which is a good match with the solar spectrum, and the band gap can be adjusted according to the proportion of the components, so the material shows great potential in the photovoltaic field. Good application prospects. Perovskite solar cells are also one of the solar cells with the fastest breakthrough in efficiency in the international solar cell field in the past five years, and are a new and key research direction in the field of materials. As of December 2014, by CH 3 NH 3 PB 3 The photoelectric conversion of assembled solar cells has reached more than 20%. [0003] As the core material of solid-state dye-sensitized solar cells, CH 3 NH 3 PB 3 、CH 3 NH ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48
CPCY02E10/549
Inventor 黄芳袁国栋李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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