Preparation method for tantalum nitride and tantalum multi-layer film with characteristics of low resistance temperature coefficient and high resistivity

Abstract

The present invention provides a preparation method for a TaN / Ta multi-layer film with characteristics of low resistance temperature coefficient and high resistivity. The preparation method comprises: a, washing an insulating substrate, and depositing a silver electrode or silver palladium electrode and other electrodes on the washed insulating substrate by using a screen printing technology so as to be adopted as a matching electrode and a grounding electrode; b, carrying out a vacuum heat treatment; c, introducing nitrogen gas and argon gas, and sputtering a tantalum nitride film resistance layer; d, sputtering a tantalum film resistance layer; e, sequentially repeating the step c and the step d a plurality of times; and f, after preparing the TaN / Ta multi-layer film, taking out the substrate from the cavity, and placing the substrate into a vacuum annealing furnace to carry out an aging treatment so as to increase the stability of the multi-layer film, wherein the aging temperature is 200 DEG C, and the aging time is 30 min. The preparation method of the present invention has the following beneficial effects that: the radio frequency reaction magnetron sputtering system is adopted, such that arc light discharge, sparking even arc-extinguishing phenomenon caused by the target material surface poisoning in the conventional direct current sputtering system can be solved, and the stability is substantially improved; and the deposition rate is fast, such that the industrialization preparation is easily achieved.

Description

technical field [0001] The invention relates to the field of resistor manufacturing, in particular to a method for preparing a multilayer film of tantalum nitride and tantalum with low temperature coefficient of resistance and high resistivity. Background technique [0002] Tantalum nitride film has a series of very excellent properties, such as chemical stability, corrosion resistance, high melting point, and good thermal stability, so it is widely used in semiconductors and integrated circuits. At the same time, the tantalum nitride film is also a good diffusion barrier layer. Because copper has a very high diffusion rate in silicon, once it enters the silicon device, it will become a deep-level acceptor impurity, thereby providing a recombination center and reducing Carrier life will eventually cause device performance degradation or even failure. Using tantalum nitride film as a diffusion barrier will improve the life of the device. Therefore, tantalum nitride film is mo...

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Problems solved by technology

[0003] In recent years, as the working frequency band of the wireless communication system gradually develops to the microwave frequency band, the physical size of each microwave component is required to be smaller and smaller, and the power to withstand is higher and higher, and there are higher requirements for the microwave power matching load. Nitrogen The matching load prepared by the tantalum oxide film is favored by the industry because the preparation method is simple, fast and stable. The control of the nitrogen content in the preparation process significantly affects the electrical properties of the film, because the resistivity of tantalum nitride significantly varies with nitrogen. The content of tantalum nitride increases rapidly, but the temperature coefficient of resistance deteriorates significantly with the increase of nitrogen content, which makes the nitrogen-rich phase appear in the film. It is necessary to make the matching load prepared by the tantalum nitride film suitable for harsh environments (-55℃~ 125°C), there are still great difficulties in the preparation of tantalum nitride films with adjustable resistivity and controllable temperature coefficient of resistance.

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