Graphene nanoribbon array terahertz sensor based on optical waveguide
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A graphene nanoribbon and optical waveguide technology, applied in the field of terahertz sensors, can solve the problems of small effective photosensitive surface and low signal light energy utilization rate, achieve high carrier mobility, improve light energy utilization rate, and light The effect of high availability
Inactive Publication Date: 2017-10-31
CHONGQING UNIV
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However, there are still many problems in the production of large-area and stable graphene materials in the existing technology, resulting in a small effective photosensitive surface of graphene THz detectors, and a small utilization rate of light energy for signals, which limits its development to practical applications.
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[0023] Below in conjunction with accompanying drawing and embodiment the present invention will be further described:
[0024] figure 1 Schematic diagram for single-layer graphene nanostructure and tuned bandgap. The biggest problem in the application of graphene materials as semiconductor optoelectronic materials is the zero energy gap characteristic of graphene, so the regulation of graphene energy gap has become the primary problem in the application of graphene optoelectronic devices. Lateral confinement, vertical electromagnetic field, molecular doping, strain and other methods have been applied to the regulation of graphene energy gap. Among them, the method of using graphene nanoribbons to generate an energy gap has become the best means to regulate the energy gap of graphene because it has little effect on the properties of graphene materials. figure 1 The left and right sides show the graphene nanoribbon structure and energy gap correspondence of different widths wi...
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Abstract
The present invention relates to a kind of terahertz sensor, more specifically, the present invention relates to a kind of graphene terahertz sensor based on optical waveguide: comprise bottom gate and low-resistance silicon substrate and be arranged on the lower insulating layer on the substrate, Graphene nanoribbon array, source and drain electrodes, upper insulating layer, top gate, optical waveguide structure, in-coupling grating, out-coupling grating and driving circuit; using graphene material has high carrier mobility, electron non-scattering transmission, Optoelectronic properties with adjustable energy gap, using graphene nanoribbons and p-i-n photodetection structures; using the characteristics of optical waveguides to collect, transmit, and converge light, a composite structure of large-area optical waveguides and graphene nanoribbon arrays is designed . The terahertz sensor of the present invention has the advantages of high light energy utilization rate, high sensitivity, fast response, can work at room temperature, simple structure, easy integration, and small size, and can be widely used in security inspection, anti-drug, anti-terrorism, medical imaging, and nondestructive testing , electronic countermeasures, radar, remote sensing, outer space broadband communication and other fields.
Description
technical field [0001] The present invention relates to a terahertz sensor, more specifically, the present invention relates to a graphene terahertz sensor based on an optical waveguide. technical background [0002] Compared with microwaves and light waves, terahertz waves have the characteristics of low photon energy, high temporal and spatial coherence, and strong penetration. In recent years, the demand for portable terahertz imaging / spectroscopy systems has become increasingly urgent in the fields of anti-terrorism and anti-terrorism, security inspection, anti-drug and on-site non-destructive testing. The miniaturization of terahertz systems and equipment puts forward requirements such as miniaturization and room temperature operation for its core components, THz source and THz detector. [0003] At present, the commonly used THz detection technology can be divided into coherent detection technology and direct detection technology. Compared with the expensive and comp...
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