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Copper Indium Gallium Rotary Target and Method for Preparing Copper Indium Gallium Rotary Target by Controlled Atmosphere Cold Spraying

A copper indium gallium, cold spraying technology, applied in metal material coating process, coating, ion implantation plating, etc., can solve the problems of increasing target production cost, target off-target, arcing, etc., to reduce oxygen and Intervention of impurities, uniform coating composition without segregation, and compact coating structure

Active Publication Date: 2017-06-20
无锡舒玛天科新能源技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the copper indium gallium selenide targets produced are mainly small-sized planar targets or short-section hollow circular targets, which need to be spliced ​​and bound to prepare large-sized targets, that is, the target and the substrate tube are bound by indium welding. Together, indium is expensive, which increases the production cost of the target. Once the binding effect is poor, the target will miss the target. In severe cases, the sputtering equipment will fail or be scrapped
In addition, there is a gap between the binding target node and the node, causing arcing during target sputtering, affecting the coating quality and reducing work efficiency

Method used

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  • Copper Indium Gallium Rotary Target and Method for Preparing Copper Indium Gallium Rotary Target by Controlled Atmosphere Cold Spraying
  • Copper Indium Gallium Rotary Target and Method for Preparing Copper Indium Gallium Rotary Target by Controlled Atmosphere Cold Spraying
  • Copper Indium Gallium Rotary Target and Method for Preparing Copper Indium Gallium Rotary Target by Controlled Atmosphere Cold Spraying

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The preparation method of controlled atmosphere cold spraying of the copper indium gallium rotating target includes the following steps:

[0026] (1) Ultrasonic cleaning the stainless steel substrate for 30 minutes, then drying and sandblasting. The sandblasted sand is brown corundum with a particle size of 18 mesh;

[0027] (2) In an argon gas protective atmosphere, use the plasma spraying process to spray nickel and aluminum powder, and prepare a primer layer with a thickness of 0.1mm on the stainless steel substrate after sandblasting;

[0028] (3) In an argon gas protective atmosphere, use a plasma spraying process to spray copper indium powder, and prepare a transition layer with a thickness of 0.1mm on the stainless steel substrate sprayed with a bottom layer;

[0029] (4) Using D50 as 100 microns and a purity of not less than 99.99% copper indium gallium powder as raw materials, put the raw materials into a planetary ball mill and grind for 5 hours, the speed of the ball ...

Embodiment 2

[0035] The controllable atmosphere cold spray preparation method of the copper indium gallium rotating target includes the following steps:

[0036] (1) Ultrasonic cleaning the stainless steel substrate for 30 minutes, then drying and sandblasting. The sandblasted sand is brown corundum with a particle size of 18 mesh;

[0037] (2) In an argon gas protective atmosphere, use the plasma spraying process to spray nickel and aluminum powder, and prepare a base layer with a thickness of 0.15mm on the stainless steel substrate after sandblasting;

[0038] (3) In an argon gas protective atmosphere, use a plasma spraying process to spray copper indium powder, and prepare a transition layer with a thickness of 0.1mm on the stainless steel substrate sprayed with a bottom layer;

[0039] (4) Using D50 as 100 microns and a purity of not less than 99.99% copper indium gallium powder as raw materials, put the raw materials into a planetary ball mill and grind for 5 hours, the speed of the ball mill ...

Embodiment 3

[0045] The controllable atmosphere cold spray preparation method of the copper indium gallium rotating target includes the following steps:

[0046] (1) Ultrasonic cleaning the stainless steel substrate for 30 minutes, then drying and sandblasting. The sandblasted sand is brown corundum with a particle size of 18 mesh;

[0047] (2) In an argon gas protective atmosphere, use the plasma spraying process to spray nickel and aluminum powder, and prepare a primer layer with a thickness of 0.1mm on the stainless steel substrate after sandblasting;

[0048] (3) In an argon gas protective atmosphere, use a plasma spraying process to spray copper indium powder, and prepare a transition layer with a thickness of 0.15mm on the stainless steel substrate sprayed with a bottom layer;

[0049] (4) Using D50 as 100 microns and a purity of not less than 99.99% copper indium gallium powder as raw materials, put the raw materials into a planetary ball mill and grind for 5 hours, the speed of the ball mil...

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Abstract

The invention provides a copper indium gallium rotating target and a preparation method thereof, including ultrasonic cleaning, drying, and sandblasting of a base stainless steel tube; preparation of a stainless steel base tube containing a nickel-aluminum layer; and a transition layer containing copper indium or copper gallium The preparation of stainless steel substrate tube; the preparation of copper indium gallium target material on the processed substrate tube and other processes. The preparation method uses copper indium gallium powder with a D50 of 100 microns as a raw material, and prepares a copper indium gallium rotating target through ball milling, sieving, and cold spraying in a protective atmosphere. The method used in the present invention has the advantages of simple process, convenient operation, and is suitable for large-scale industrial production. The prepared target material has high purity (≥99.99%), high relative density (≥97%), unlimited size, and a thickness of 3~ 15mm, length can reach 4000mm, oxygen content ≤ 200ppm.

Description

Technical field [0001] The invention relates to a target material and its preparation method and technology, in particular to a copper indium gallium rotating target material and a method for preparing a copper indium gallium rotating target material by cold spraying with a controllable atmosphere. Background technique [0002] At present, with the global warming and the deteriorating environment, people are paying more and more attention to clean energy. In the past few decades, the solar cell industry has developed rapidly. Due to its high conversion efficiency, copper indium gallium selenium thin films are increasingly used in solar cells. Thin film copper indium gallium selenide solar cells are respectively coated with a molybdenum electrode layer, a copper indium gallium selenide absorption layer, a cadmium sulfide buffer layer, an intrinsic zinc oxide, an aluminum-zinc oxide window layer and a surface contact layer on a glass substrate. According to Lux Research's researc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C24/04
Inventor 徐从康
Owner 无锡舒玛天科新能源技术有限公司