Metal quantum dot/organic semiconductor composite conductive channel film transistor preparation method

A technology of organic semiconductors and thin film transistors, which is applied in the field of preparation of metal quantum dots/organic semiconductor composite conductive channel thin film transistors, can solve the problems of limited overall device performance, sensitivity, limited switching frequency and speed, and difficulties in meeting demands, and achieve Improved sensitivity and output transfer characteristics, flexible and controllable device performance, and novel preparation methods

Active Publication Date: 2015-09-02
FUZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This traditional thin film field effect transistor based on silicon microelectronics technology has problems such as high equipment requirements, complicated manufacturing process, high cost, limited overall performance of the device, limited sensitivity, switching frequency and speed, etc.
Moreover, with the gradual improveme

Method used

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  • Metal quantum dot/organic semiconductor composite conductive channel film transistor preparation method
  • Metal quantum dot/organic semiconductor composite conductive channel film transistor preparation method
  • Metal quantum dot/organic semiconductor composite conductive channel film transistor preparation method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0032] Example one.

[0033] (1) Weigh the metal ion-containing compounds such as silver nitrate or HAuCl4 according to the proportions: sodium linoleate: absolute ethanol: linoleic acid = 0.3:1.0:5:0.5, and then pour the mixture into the reaction kettle, and Add appropriate amount of deionized water to make the volume of the mixture account for 40% of the total volume of the reactor, stir and mix uniformly, heat treatment at 20°C for 30 minutes, and then repeat the reaction product with deionized water / absolute ethanol and high-speed centrifugation After cleaning, the final product is dispersed in cyclohexane to obtain the corresponding metal quantum dot solution;

[0034] (2) Take a silicon / silicon dioxide substrate with a size of 1cm×1cm and an oxide layer (silicon dioxide film) with a thickness of 30nm, figure 1 It is a schematic diagram of the silicon / silicon dioxide substrate structure, where 1 is the silicon substrate and 2 is the silicon dioxide film on the silicon surface....

Example Embodiment

[0038] Example two.

[0039] (1) Weigh the metal ion-containing compounds such as silver nitrate or HAuCl4 according to the proportions: sodium linoleate: absolute ethanol: linoleic acid = 0.7:1.5:10:1.5, and then pour the mixture into the reactor, and Add appropriate amount of deionized water to make the volume of the mixture account for 50% of the total volume of the reactor, stir and mix uniformly, heat treatment at 140℃ for 200min, then repeat the reaction product with deionized water / absolute ethanol and high-speed centrifugation After cleaning, the final product is dispersed in cyclohexane to obtain the corresponding metal quantum dot solution;

[0040] (2) Take a silicon / silicon dioxide substrate with a size of 1cm×1cm and an oxide layer thickness of 200nm, figure 1 It is a schematic diagram of the silicon / silicon dioxide substrate structure, where 1 is the silicon substrate and 2 is the silicon dioxide film on the silicon surface. The silicon / silicon dioxide substrate was ...

Example Embodiment

[0044] Example three.

[0045] (1) Weigh the metal ion-containing compounds such as silver nitrate or HAuCl4 according to the proportions: sodium linoleate: absolute ethanol: linoleic acid = 1.0: 2.0: 15: 2.5, and then pour the mixture into the reaction kettle, and Add appropriate amount of deionized water to make the volume of the mixture account for 60% of the total volume of the reactor, stir and mix uniformly, heat treatment at 200°C for 400 minutes, and then repeat the reaction product with deionized water / anhydrous ethanol and high-speed centrifugation After cleaning, the final product is dispersed in cyclohexane to obtain the corresponding metal quantum dot solution;

[0046] (2) Take a silicon / silicon dioxide substrate with a size of 1cm×1cm and an oxide layer thickness of 300nm, figure 1 It is a schematic diagram of the silicon / silicon dioxide substrate structure, where 1 is the silicon substrate and 2 is the silicon dioxide film on the silicon surface. The silicon / silico...

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Abstract

The invention relates to a metal quantum dot/organic semiconductor composite conductive channel film transistor preparation method comprising the following steps: forming a metal quantum dot layer and an organic semiconductor layer in sequence on a silicon/silica substrate; using a graphical mask layer cover vapor plating technology to respectively form a Cr/Au composite metal electrode on a surface of a metal quantum dot/organic semiconductor composite conductive channel and the backside of the silicon chip substrate, thus serving a corresponding source electrode, a drain electrode and a grid electrode; using spin coating organic matter to effectively package and cover the quantum dot conductive channel, thus making a novel metal quantum dot/organic semiconductor composite conductive channel film transistor. The preparation method is novel, low in production cost, simple in preparation technology, accurate and controllable, can effectively improve on/off ratio and current value of the metal quantum dot/organic semiconductor composite conductive channel film transistor, thus having very important application value in novel photoelectric devices.

Description

technical field [0001] The invention relates to the field of semiconductor nanometer materials and devices, in particular to a method for preparing a metal quantum dot / organic semiconductor composite conduction channel thin film transistor. Background technique [0002] With the development of science and technology and the progress of society, people are increasingly dependent on information storage, transmission and processing. As the main carrier and material basis of information storage, transmission and processing, semiconductor devices and process technology have become a hot spot for many scientists to study. Thin film transistors, as a very important semiconductor device, play a vital role in the fields of information storage, transmission and processing. However, as of now, the existing large-scale use of thin-film transistors is a semiconductor device based on silicon technology for microelectronics. This traditional thin film field effect transistor based on s...

Claims

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Application Information

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IPC IPC(8): H01L51/40H01L51/30
CPCH10K71/12H10K85/00H10K10/00H10K10/488H10K10/88
Inventor 杨尊先郭太良徐胜周雄图钱堃杨洋
Owner FUZHOU UNIVERSITY
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