A kind of preparation method of zno hemispherical micro-nano structure and obtained product

A micro-nanostructure, hemispherical technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of poor size control effect, poor morphology uniformity, poor repeatability, etc. Good market application prospect, good appearance, high yield effect

Inactive Publication Date: 2017-09-08
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Limited by the preparation process, poor repeatability, low crystallinity, poor shape uniformity, and poor size control have become the main problems facing high-efficiency ZnO micro-nano structures.

Method used

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  • A kind of preparation method of zno hemispherical micro-nano structure and obtained product
  • A kind of preparation method of zno hemispherical micro-nano structure and obtained product
  • A kind of preparation method of zno hemispherical micro-nano structure and obtained product

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] 1.1 Add 0.439 g of zinc acetate to a mixed solvent of 30 mL of ethylene glycol and 1 mL of water and stir until clear;

[0034] 1.2 Add 3 mL of ethanolamine dropwise to the above solution and stir evenly;

[0035] 1.3 Transfer the above solution to the reactor and react at 150 °C for 12 h;

[0036] 1.4 After the reaction, the product was obtained after centrifugation and washing.

[0037] SEM of the product as figure 1 with figure 2 It can be seen from the figure that the obtained product is a solid hemispherical structure formed by the close arrangement of ZnO particles and ZnO rods. The diameter of the ZnO hemispherical structure is 1.5-1.7 μm, and the diameter of the central part is 0.9-1.1 μm , consisting of ZnO particles with a size of 0.04-0.06 μm, the outer layer part is composed of ZnO rods with a diameter of 0.04-0.06 μm and a length of 0.27-0.30 μm, and the ZnO rods are closely arranged along the diameter of the ball.

[0038] The XRD pattern of the produ...

Embodiment 2

[0041] 2.1 Add 0.525 g of zinc nitrate hexahydrate to a mixed solvent of 30 mL of ethylene glycol and 0.8 mL of water and stir until clear;

[0042] 2.2 Add 3.6 mL of ethanolamine dropwise to the above solution and stir evenly;

[0043] 2.3 Transfer the above solution to the reactor and react at 130 °C for 2 h;

[0044] 2.4 After the reaction is over, the product is obtained after centrifugation and washing.

[0045]The obtained product is a solid hemispherical structure formed by the close arrangement of ZnO particles and ZnO rods. The diameter of the ZnO hemispherical structure is 0.23-0.26 μm, and the diameter of the central part is 0.14-0.16 μm. The outer layer is composed of ZnO rods with a diameter of 0.02-0.03 μm and a length of 0.04-0.06 μm, and the ZnO rods are closely arranged along the diameter of the ball.

[0046] The product is irradiated by a 365 nm ultraviolet lamp, and the illuminated area is 1.5cm 2 Under the condition, its photocurrent intensity can reach...

Embodiment 3

[0048] 3.1 Add 0.875 g of zinc nitrate hexahydrate to a mixed solvent of 30 mL of ethylene glycol and 1.2 mL of water and stir until clear;

[0049] 3.2 Add 4.5 mL of ethanolamine dropwise to the above solution and stir evenly;

[0050] 3.3 Transfer the above solution to the reactor and react at 170 °C for 26 h;

[0051] 3.4 After the reaction is over, the product is obtained after centrifugation and washing.

[0052] The obtained product is a solid hemispherical structure formed by the close arrangement of ZnO particles and ZnO rods. The diameter of the ZnO hemispherical structure is 9.2-9.6 μm, and the diameter of the central part is 3.6-3.8 μm. The outer part is composed of ZnO rods with a diameter of 0.25-0.28 μm and a length of 2.7-2.9 μm, and the ZnO rods are closely arranged along the diameter direction of the ball.

[0053] The product is irradiated by a 365 nm ultraviolet lamp, and the illuminated area is 1.5cm 2 Under the condition, its photocurrent intensity can ...

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Abstract

The invention discloses a preparation method of ZnO micro-nano structure, comprising the following steps: adding divalent zinc salt into a mixed solvent of ethylene glycol and water, and stirring to obtain a transparent solution; continuing to drop a certain amount of ethanolamine to obtain a precursor The precursor solution is heated to 130-170°C by solvothermal method and kept for a period of time; after the reaction, it is centrifuged and washed to obtain a ZnO hemispherical structure with controllable morphology. The invention requires low price of raw materials, simple reaction process and narrow range of product size distribution, which is of great significance to the fine regulation and large-scale application of ZnO hemispherical structure. The obtained ZnO hemispherical structure has good repeatability, high yield, and controllable particle size, and has good development prospects in the fields of photoelectric conversion and photocatalysis.

Description

technical field [0001] The invention relates to a method for preparing a ZnO micro-nano structure and a product obtained, in particular to a method for preparing a ZnO hemispherical micro-nano structure and a product obtained. Background technique [0002] ZnO is an important semiconductor oxide material, which has a wide direct band gap (3.37 eV) and a large exciton binding energy (60 meV), and can realize stimulated emission of ultraviolet light at room temperature. It is used in light-emitting diodes, dye-sensitized solar cells, photocatalysis, gas-sensitive materials, biosensors and other fields, and its development prospects are very huge. At present, scholars at home and abroad can obtain ZnO micro-nanostructures with different shapes by using different synthesis methods, and focus on studying the growth habit and mechanism of ZnO and its composite materials, and exploring the mechanism of influence between structure and performance. One of the research hotspots in th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y30/00
Inventor 马谦陈玲车全德王俊鹏傅琳景杨萍
Owner UNIV OF JINAN
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