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Intermediate-infrared detector and preparation method thereof

An infrared detector and solution technology, applied in semiconductor/solid-state device manufacturing, semiconductor device, final product manufacturing, etc., can solve problems such as staying in research and development, and achieve the effect of improving uniformity and ensuring parallelism

Active Publication Date: 2015-09-09
济源艾探电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, there are few reports on the performance of lead-salt detectors in China, and most of them are still in the research and development stage
According to the development of nearly 30 years abroad, there are mainly two preparation methods, one is the traditional low-cost chemical bath method as mentioned above (Infrared detectors, 1984, Vol.443, Pages 60-94, San Diego , California), after years of development, companies such as Calsensors in the United States can increase the detection rate of this type of lead salt detector to 1×1010cm·Hz1 / 2 at room temperature / W or above; the other is the lead salt detector prepared by Spanish James Martin et al. 109cm·Hz1 / 2 / W

Method used

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  • Intermediate-infrared detector and preparation method thereof

Examples

Experimental program
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Effect test

preparation example Construction

[0049] Preparation of lead salt thin film substrate: first move the deposition solution into the deposition container, and place the deposition container in a water bath with a temperature of 50-100°C, then hang the cleaned substrate in the middle of the deposition solution, at a speed of 30-50rpm Stir and deposit for 2.5 to 3 hours to obtain a lead salt thin film substrate; Example: ① Turn on the magnetic stirrer, adjust and control the temperature of the water bath to 80°C; ② Quantitatively transfer the prepared solution 5 to a 500mL glass deposition container, and put Place the quartz substrate horizontally in the deposition solution; ③ Seal the glass deposition container containing solution 5; heat the deposition container in a water bath and adjust the speed of the magnetic stirrer to 50rpm to start the deposition process; ④ Finish the deposition after 3 hours and take out the substrate end.

[0050] Sensitization treatment: put the lead salt film prepared by chemical ...

example 1

[0055] Select a 30×40mm quartz substrate, clean it with standard cleaning process, dry it with high-purity nitrogen gas and place it on a fixed support.

[0056] 100mL mass concentration of 120g / L potassium hydroxide solution is added into a glass container filled with 190mL distilled water, and 100mL mass concentration of 180g / L lead acetate solution is slowly added at a stirring speed of 300rpm. Add 10 mL of soluble starch solution with a mass concentration of 1 g / L and 100 mL of a sodium selenosulfate solution with a mass concentration of 100 g / L in sequence at a rate of addition, and stir for 10 minutes to obtain 500 mL of a colorless and transparent deposition solution.

[0057] like figure 1 As shown, the fixed bracket with the substrate was suspended horizontally in the deposition solution, and transferred to a water bath at 75°C and 40 rpm, sealed, and the substrate was taken out after 3 hours to complete the deposition. The lead salt film prepared by chemical bat...

example 2

[0064] Select a 30×40mm ordinary glass substrate, clean it with standard cleaning process, dry it with high-purity nitrogen and place it on a fixed support.

[0065] Measure 100mL of sodium selenosulfate solution with a mass concentration of 205g / L, 100mL of lead acetate solution with a mass concentration of 180g / L, 100mL of potassium hydroxide aqueous solution with a mass concentration of 160g / L, and 10mL of soluble Starch solution and 190 mL of distilled water were used to configure 500 mL of deposition solution in the manner of Example 1.

[0066] The fixed bracket with the substrate was suspended horizontally in the deposition solution, and transferred to a water bath at 80°C and 45 rpm, sealed, and the substrate was taken out after 2.5 hours to complete the deposition.

[0067] Clean the attachment on the substrate, and cut it into a film substrate of 3mm×2mm.

[0068] Put the film substrate into the annealing furnace, check and ensure that the annealing device is wel...

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Abstract

The invention relates to an intermediate-infrared detector and a preparation method thereof. The intermediate-infrared detector comprises a substrate, a lead salt film and a passivation layer. The lead salt film is prepared by a selenosulfate solution, a lead acetate solution, a potassium hydroxide water solution and a soluble starch solution in the mass-volume percentage concentration ratio of 1: (0.8-3.5): (0.5-25): (0.0001-0.001) and in the size ratio of 1: (0.5-2.0): (0.5-4): (0.01-0.1). The intermediate-infrared detector improves the response rate and the signal to noise ratio, and reduces the production cost.

Description

technical field [0001] The invention belongs to the technical field of photoelectron detectors, and in particular relates to a mid-infrared detector and a preparation method thereof. Background technique [0002] Infrared photodetector is a device that receives light signals and converts them into electrical signals. Infrared detectors are divided into cooled infrared detectors and uncooled infrared detectors according to whether their sensitive surfaces need cooling. The former is mainly used in the high-end military field, while the latter is more widely used due to the omission of refrigeration devices, small size, low power consumption, strong environmental adaptability, and long life. [0003] Since the 1930s, uncooled photodetectors in the 1-3um and 3-5um spectral ranges are still dominated by low-cost lead sulfide and lead selenide (in the mid-infrared spectral range, lead salt detectors are sensitive and reliable. performance is superior to cadmium telluride detect...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/032H01L21/02H01L31/18
CPCH01L21/02568H01L21/02628H01L31/0324H01L31/09H01L31/1864Y02P70/50
Inventor 原子健
Owner 济源艾探电子科技有限公司
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