Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Back surface detection type SERS (surface-enhanced Raman scattering) chip and preparation method thereof

A detection-type, back-side technology, which is applied in the field of back-side detection-type silver nano-crown array SERS chip and its preparation, can solve the problems that the detection platform cannot be applied, does not consider excitation and detection, etc., and achieves a convenient and extensive sampling process. Applicability, effects of avoiding complex installations

Inactive Publication Date: 2015-11-11
JILIN UNIV
View PDF0 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The usual SERS detection chip does not consider the possibility of excitation and detection from the back, and does not optimize the sensitivity from the back detection method, which can only meet the conventional detection requirements. For special detection platforms (SERS chip and inverted microscope Raman Spectrometer, optical fiber, waveguide structure coupling) cannot be applied

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Back surface detection type SERS (surface-enhanced Raman scattering) chip and preparation method thereof
  • Back surface detection type SERS (surface-enhanced Raman scattering) chip and preparation method thereof
  • Back surface detection type SERS (surface-enhanced Raman scattering) chip and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1: a kind of preparation method of the back detection type SERS chip, method step is as follows,

[0029] (1) Dissolve 0.6 g of polymethyl methacrylate (PMMA) in 20 mL of dichloromethane to form a PMMA solution. At a rotational speed of 1500rmp / min, the solution was suspended coated on the composite periodic anodized aluminum oxide (AAO, period interval 500nm, the pore diameter of the central hole in the periodic unit was 90nm, and the pore diameter of the six surrounding holes in the periodic unit was 170nm) template surface, AAO The template size is 1.5cm×1cm, the hanging coating time is 20s, and the hanging coating is repeated 6 times. The obtained sample was placed on a hot stage at 130° C., and heated and cured for 30 minutes to obtain a transparent polymer layer with a thickness of 0.3 mm.

[0030] (2) The sample obtained in step (1) was placed in 1.0 M sodium hydroxide aqueous solution for 15 min to remove the AAO template, and a PMMA composite ordere...

Embodiment 2

[0036] The SERS chip obtained in Example 1 was tested by two ways of front detection and back detection respectively. Select 4-mercaptopyridine (molecular formula is C 6 h 7 N 3 O) is the probe molecule. 5.0 μL of 1.0 x 10 -4 The aqueous solution of M4-mercaptopyridine was added dropwise on the surface of the chip, and after the sample was completely dried, it was detected by a fiber-optic portable Raman spectrometer (B&WTek Inc.). The laser wavelength is 532nm, the laser power is 3.2mW, and the integration time is 10s. In front-side inspection, the laser beam is incident from the front side of the chip. In backside detection, laser light is incident from the backside of the chip. The SERS spectra of 4-mercaptopyridine obtained in two ways are attached Figure 4 shown. Among them, the intensity of the SERS signal (curve 2) obtained by the backside detection is significantly higher than the intensity of the SERS signal (curve 1) obtained by the front detection.

Embodiment 3

[0038] The back side detection SERS chip obtained in Example 1 was applied, and the supersensitive detection was realized by using the composite ordered periodic silver nanocrown array SERS substrate of the chip. Select pesticide thiram (molecular formula is C 4 h 9 N 2 S 4 ) is the sample to be tested, 5.0μL 1.0×10 -12 The ethanol solution of M thiram was added dropwise on the surface of the chip, and after the sample was completely dried, it was detected by a fiber optic portable Raman spectrometer (B&WTek Inc.). The laser is incident from the back of the chip, the laser wavelength is 532nm, the laser power is 3.2mW, the integration time is 10s, and the SERS spectrum of thiram is obtained (see attached Figure 5 ). The chip can obtain the surface-enhanced Raman spectrum of trace pesticides, and is an ultra-sensitive SERS chip with practical application value.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Apertureaaaaaaaaaa
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a back surface detection type SERS (surface-enhanced Raman scattering) chip and a preparation method thereof, and belongs to the technical field of SERS. The SERS chip is a polymer-metal composite material. The preparation method of the SERS chip comprises the following steps: copying an AAO (Anode Alumina Oxide) template structure by using a polymer, so as to obtain a polymer coronary array with the surface structure complementary to the AAO surface structure; further constructing a noble metal layer with SERS activity on the surface of the polymer coronary array, so as to obtain the SERS chip. Through the adoption of the manufacturing technology and the selected chip material, the two sides of the chip are different in medium material and surface roughness; experiments and theoretic simulation prove that surface plasma can be more effectively excited and coupling can be realized on the premise that the back surface detection manner is adopted for the chip, so as to obtain stronger SERS signals.

Description

technical field [0001] The invention belongs to the technical field of surface-enhanced Raman scattering (SERS), and in particular relates to a rear-side detection type silver nano-crown array SERS chip with an ordered structure and a preparation method thereof. The ordered structure of the chip, the manufacturing process and the selected chip material make it suitable for the back detection method, and the sensitivity of the chip is improved through the back detection method. Background technique [0002] Surface Enhanced Raman Spectroscopy (SERS) has become an important part of modern molecular spectroscopy because of its high sensitivity, mild detection conditions, and fingerprint recognition, and has a wide range of applications in the fields of biology, medicine, chemistry, and industry. In order to obtain high-quality detection signals quickly and accurately, SERS substrates and chips have become the focus of attention. [0003] In the SERS detection process, it mainl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N21/65
Inventor 徐蔚青王祎徐抒平王海龙刘向源田中群王昱扬周向华
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com