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A method for preparing light-emitting diodes using wet etching for substrate lift-off

A technology of light-emitting diodes and wet etching, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of unfavorable large-scale production and use, affecting the performance of LED chips, and high cost of laser stripping, so as to reduce light efficiency Effect of reducing phenomenon, strong surface migration ability, and improving luminous performance

Active Publication Date: 2017-12-29
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Application Information

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Problems solved by technology

The flip-chip structure of sapphire as the original substrate usually uses laser ablation technology to peel off the substrate, but when the LED chip is irradiated with laser light, the laser will enter the active layer and cause damage to the active layer, which will affect the LED chip. performance; and the cost of laser stripping is high, which is unfavorable for mass production

Method used

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  • A method for preparing light-emitting diodes using wet etching for substrate lift-off
  • A method for preparing light-emitting diodes using wet etching for substrate lift-off
  • A method for preparing light-emitting diodes using wet etching for substrate lift-off

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Embodiment 1

[0038] See attached figure 1 , providing a first substrate 10, which is any one of a sapphire flat substrate, a sapphire patterned substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, and a glass substrate, and a sapphire pattern is preferred here An epitaxial wafer is prepared on the surface of the first substrate 10, the epitaxial wafer structure at least includes a nucleation layer 21 deposited by MOCVD, and a first non-doped or N-type doped gallium nitride with a thickness of 0.5 to 5 microns Layer 22, a non-doped or N-type doped second gallium nitride layer 24 with a thickness of 0.5 to 5 microns, an N-type layer 30, a quantum well layer 40 and a P-type layer 50; wherein, the first nitrogen is deposited by MOCVD After the gallium nitride layer 22 is completed, a layer of aluminum nitride layer 23 with a thickness of 1-10000 angstroms is deposited on the surface of the first gallium nitride layer 22 by PVD method. Because the first gall...

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Abstract

The invention provides a light emitting diode manufacturing method capable of using wet etching to carry out substrate peeling. A secondary growth way is used to make and insert an aluminum nitride layer. Through using the layer, extension of a defect, which is caused by mismatching of the substrate and a lattice of a subsequent epitaxial layer, is terminated. Simultaneously, in a secondary growth process, a multi-lattice characteristic of the aluminum nitride layer prepared by a PVD method because of low temperature growth can be removed through corrosion by using a simple wet method mode so that a purpose of simply and rapidly peeling a first substrate is reached.

Description

technical field [0001] The invention relates to a method for preparing a light-emitting diode by using wet etching to carry out substrate peeling off. Background technique [0002] Light-emitting diodes (LEDs) have the advantages of energy saving, environmental protection, and long life, and have been widely used in fields such as backlighting, outdoor display, landscape lighting, and general lighting. However, the most widely used in lighting equipment is blue light source + yellow phosphor to produce white light, and the current main blue light device is gallium nitride semiconductor, and its epitaxial growth mainly includes homoepitaxial growth and heterogeneous epitaxial growth, and homoepitaxial growth adopts Growth is performed on substrates that match the lattice of nitride semiconductors, such as gallium nitride substrates, and heteroepitaxial growth is grown on substrates that are lattice-mismatched with nitride semiconductors, such as sapphire substrates, silicon s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/22H01L21/78
CPCH01L21/7813H01L33/0075H01L33/0093H01L33/22
Inventor 李政鸿徐志波林兓兓其他发明人请求不公开姓名
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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